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IPD80P03P4L-07
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IPD80P03P4L-07
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データシート IPD80P03P4L-07 DataSheet
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在庫状況4819
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 2500 |
| Technology | Si |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| REACH - SVHC | Details |
| Mounting Type | SMD/SMT |
| Package / Case | DPAK-3 (TO-252-3) |
| Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 80 A |
| Rds On | 5.6 mOhms |
| Vgs - Gate - Source Voltage | - 16 V, + 5 V |
| Vgs th - Gate - Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 63 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 88 W |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Configuration | Single |
| Fall Time | 60 ns |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Rise Time | 4 ns |
| Series | OptiMOS-P2 |
| Transistor Type | 1 P-Channel |
| Typical Turn - Off Delay Time | 15 ns |
| Typical Turn - On Delay Time | 8 ns |
| Width | 6.22 mm |
| Part # Aliases | SP000396296 IPD8P3P4L7XT IPD80P03P4L07ATMA1 |
| Unit Weight | 0.011640 oz |
| Qualification | AEC-Q100 |
概要
Description
The device is packaged in a TO-220 housing, offering effective thermal performance and heat dissipation. Its fast switching speed makes it ideal for high-frequency applications, while the low gate charge ensures reduced drive power requirements.
Key characteristics include high thermal stability, low gate threshold voltage, and robustness against avalanche conditions, making it a reliable choice for designers looking to optimize performance and efficiency in their circuits. Overall, the IPD80P03P4L-07 is a versatile component for modern electronic designs requiring efficient power management solutions.
Equivalent
Features
1. Voltage Rating: It typically supports a drain-source voltage (VDS) of up to 30V.
2. Current Handling: Offers a continuous drain current (ID) of 80A, making it suitable for high-current applications.
3. Low RDS(on): Features a low on-resistance (RDS(on)) of approximately 3.4 mΩ, enhancing efficiency and reducing power losses.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) is in the range of 1-2V, allowing for efficient switching.
5. Package Type: Available in a TO-220 package, which aids in effective heat dissipation.
6. Fast Switching Speed: Designed for quick switching, reducing transition losses in high-frequency applications.
7. Thermal Performance: Good thermal management capabilities ensure reliable operation in demanding environments.
This MOSFET is ideal for applications in power supplies, motor control, and other high-efficiency designs.
Pinout
The pins are typically designated as follows:
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load. It is the terminal through which the main current enters the MOSFET.
3. Source (S): This pin is connected to ground or the lower potential side of the circuit. It is the terminal through which the current exits the MOSFET.
The IPD80P03P4L-07 is designed for low on-resistance and high efficiency, making it suitable for applications in power supply circuits, battery management systems, and motor control.
Manufacturer
Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and operates in numerous countries worldwide. The company focuses on enabling smarter and more efficient electronic systems through advanced semiconductor technologies, including power management, microcontrollers, sensors, and more. Their products are utilized in a variety of applications, making them a key player in the electronics industry.
STMicroelectronics emphasizes sustainability and environmental responsibility in its operations and product designs, aligning with global trends towards energy efficiency and eco-friendly technologies. This commitment, along with their extensive research and development capabilities, positions them as a leader in the semiconductor market.