IPI041N12N3G

The IPI041N12N3G is a 120V, 41A N-channel MOSFET from Infineon’s OptiMOS™ 3 series, designed for high-efficiency power applications. Key features include:
- Low on-resistance (RDS(on)): 12.3mΩ (max) at 10V, reducing conduction losses.
- Fast switching: Optimized for high-frequency applications like DC-DC converters, motor drives, and SMPS.
- High current handling: Supports up to 41A continuous drain current.
- Low gate charge (Qg): Enhances switching efficiency.
- AEC-Q101 qualified: Suitable for automotive applications.
Packaged in TO-252 (DPAK), it offers compact size with good thermal performance. Ideal for 12V–48V systems, including automotive, industrial, and telecom power solutions.
For detailed specs, refer to Infineon’s datasheet.

The IPI041N12N3G is a 120V N-channel MOSFET with the following key features:
- Low On-Resistance (R_DS(on)): 4.1 mΩ (max) at V_GS = 10V, reducing conduction losses.
- High Current Handling: Up to 41A continuous (T_C = 25°C).
- Fast Switching: Optimized for high-frequency applications.
- Low Gate Charge (Q_G): Enhances efficiency in power switching.
- Avalanche Energy Rated: Improves reliability in rugged conditions.
- Logic-Level Gate Drive: Compatible with 5V drive signals.
- Package: TO-252 (DPAK), suitable for space-constrained designs.
Ideal for DC-DC converters, motor control, and power management in automotive/industrial applications.

The IPI041N12N3G is a 12V, 41A N-channel MOSFET in a TO-252 (DPAK) package.
- Pin Count: 3 pins (Gate, Drain, Source).
- Functions:
- Gate (G): Controls switching.
- Drain (D): Connects to load (high-voltage side).
- Source (S): Connects to ground (low-voltage side).
Key features:
- Low RDS(on) (4.1 mΩ max @ VGS=10V).
- Optimized for high-efficiency power switching (e.g., DC-DC converters, motor drives).
Package pinout (left to right, standard DPAK): Gate | Drain | Source.

The IPI041N12N3G is a 120V N-channel MOSFET by Infineon, optimized for high-efficiency power applications. Key application areas include:
- DC-DC Converters: Used in synchronous rectification for step-down/step-up voltage conversion.
- Motor Drives: Efficient switching in automotive and industrial motor control systems.
- Power Supplies: High-frequency SMPS (Switched-Mode Power Supplies) and server PSUs.
- Battery Management: Protection circuits and load switches in EVs/energy storage.
- Renewable Energy: Solar inverters and MPPT controllers.
Its low RDS(on) and fast switching suit high-current, high-efficiency designs.

The IPI041N12N3G is a power MOSFET housed in a TO-263-3 (D2PAK) package. This surface-mount package offers efficient thermal performance and is commonly used in high-power applications. It has three leads and a tab for heat dissipation.