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IPL60R125C7
+BOMMOSFETs HIGH POWER_NEW
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IPL60R125C7
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データシート IPL60R125C7 DataSheet
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在庫状況4213
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Packaging | Reel |
概要
Description
The IPL60R125C7 is designed to enhance performance in applications such as power supply units, lighting systems, and other electronic devices requiring efficient power conversion. Its fast switching capabilities help minimize energy dissipation, thus improving overall system efficiency. Additionally, CoolMOS technology used in this MOSFET provides significant advantages in terms of thermal performance, enabling higher power densities and compact designs.
Overall, the IPL60R125C7 is a reliable choice for engineers looking to optimize efficiency in high-performance power systems, offering a balance of speed, efficiency, and thermal management.
Equivalent
Features
1. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 20.8A, making it suitable for high-voltage applications.
2. Low On-Resistance: The device features a very low R_DS(on) of 0.125 ohms, minimizing conduction losses and improving efficiency.
3. High-Speed Switching: Enhanced switching performance is achieved through reduced gate charge and optimized capacitances, which contribute to higher efficiency and reduced switching losses.
4. Thermal Performance: The MOSFET is designed for superior thermal efficiency, allowing it to handle high power levels while maintaining operational stability.
5. Application: Ideal for use in applications like power supply units, photovoltaic inverters, and other high-efficiency power conversion systems.
Overall, the IPL60R125C7 is engineered for applications requiring high performance, efficiency, and reliability in power management and conversion.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the source and drain.
2. Drain (D): This is where the main current enters the MOSFET from the load.
3. Source (S): This is where current exits the MOSFET to return to the ground or common.
The IPL60R125C7 is designed for high voltage applications with a voltage rating of 600V and a typical R_DS(on) (drain-source on-resistance) of 0.125 ohms. It is used in various power conversion and management applications, such as in power supplies and converters, due to its efficient switching characteristics and robustness.
Manufacturer
Application
1. Switching Power Supplies: Used in SMPS for efficient power conversion.
2. Telecommunications: Utilized in telecom power systems for voltage regulation and power distribution.
3. DC-DC Converters: Applicable in step-down or step-up converters in electronic devices.
4. Motor Drives: Employed in motor control circuits for better performance.
5. Lighting Systems: Used in LED drivers and other advanced lighting solutions.
6. Renewable Energy Systems: Suitable for solar inverters and other renewable energy applications.
These areas benefit from the device's low on-resistance and fast switching capabilities.