IPL65R195C7

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IPL65R195C7

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  • メーカー品番 #IPL65R195C7

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仕様

属性
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity 2500
Technology Si
Shipping Restrictions Mouser does not presently sell this product in your region.
REACH - SVHC Details
Mounting Type SMD/SMT
Package / Case DPAK-3 (TO-252-3)
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain - Source Breakdown Voltage 650 V
Id - Continuous Drain Current 10.6 A
Rds On 380 mOhms
Vgs - Gate - Source Voltage - 20 V, + 20 V
Vgs th - Gate - Source Threshold Voltage 3.5 V
Qg - Gate Charge 39 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 83 W
Channel Mode Enhancement
Tradename CoolMOS
Configuration Single
Fall Time 8 nS
Height 2.3 mm
Length 6.5 mm
Rise Time 7 nS
Series CoolMOS E6
Transistor Type 1 N-Channel
Typical Turn - Off Delay Time 57 nS
Width 6.22 mm
Part # Aliases SP000795278 IPD65R38E6XT IPD65R380E6BTMA1
Unit Weight 0.011640 oz

概要

Description

The IPL65R195C7 is an advanced power transistor designed for high-efficiency applications, particularly in power conversion and switching. It belongs to the IGBT (Insulated Gate Bipolar Transistor) family, which combines the easy control of MOSFETs with the high-voltage and high-current handling of bipolar transistors.
Key features of the IPL65R195C7 include a maximum collector-emitter voltage (Vce) of 650V and a continuous collector current (Ic) of 195A, making it suitable for demanding industrial applications like motor drives, UPS systems, and renewable energy systems. The device offers low on-state voltage drop and fast switching capabilities, which improve overall system efficiency and reduce thermal losses.
This IGBT is often packaged in a robust format, ensuring reliability in harsh environments. Its performance characteristics enable designers to optimize circuit designs for energy savings and improved performance in various power electronics applications.

Equivalent

The IPL65R195C7 is an Infineon IGBT module. Equivalent products include the Mitsubishi CM600HA-24F, the Fuji Electric 2MBI600U4B-120, and the Semikron SKM600GB123D. Ensure to check datasheets for specific ratings and characteristics to confirm compatibility for your application.

Features

The IPL65R195C7 is a high-performance insulated gate bipolar transistor (IGBT) designed for various applications, particularly in power electronics. It features a maximum collector current of 65A, a collector-emitter voltage rating of 1,200V, and a low switching loss, making it suitable for efficient operation in inverters, motor drives, and power converters.
Key features include:
1. High Voltage Rating: Can handle voltages up to 1,200V, suitable for demanding applications.
2. Low Saturation Voltage: Minimizes power losses during conduction.
3. Fast Switching Speed: Enhances efficiency and reduces heat generation.
4. Thermal Stability: Built to operate reliably under high-temperature conditions.
5. Robust Packaging: Ensures durability and ease of integration into various systems.
Overall, the IPL65R195C7 is ideal for applications requiring reliable, high-efficiency power switching and conversion.

Pinout

The IPL65R195C7 is an N-channel MOSFET designed for high-voltage applications. It features a total of 6 pins. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where the load connects.
3. Source (S): The terminal connected to ground or the negative side of the supply.
The MOSFET is rated for a maximum drain-source voltage (VDS) of 650V and a continuous drain current (ID) of up to 195A. It offers low on-resistance and fast switching capabilities, making it suitable for applications such as power supplies, inverters, and motor control systems.

Manufacturer

The IPL65R195C7 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in providing a wide range of semiconductor and system solutions, particularly in the fields of power management, automotive electronics, and industrial applications. The company focuses on innovation and sustainability, developing products that enhance energy efficiency and connectivity.
Infineon operates in various sectors, including automotive, industrial power control, and security technologies, offering products such as microcontrollers, sensors, and power semiconductors. They cater to diverse markets, including automotive, consumer electronics, and industrial automation. With a commitment to research and development, Infineon plays a significant role in advancing technologies that support the digital transformation and electrification of various industries.
Overall, Infineon Technologies AG is recognized for its high-quality semiconductor solutions, contributing to the advancement of technology and sustainability across multiple sectors.

Application

The IPL65R195C7 is an IGBT (Insulated Gate Bipolar Transistor) designed for high-power applications. Its primary application areas include:
1. Inverters: Used in renewable energy systems like solar and wind power.
2. Motor Drives: Employed in variable frequency drives (VFDs) for industrial motors.
3. Power Supplies: Utilized in switch-mode power supplies (SMPS) for efficient energy conversion.
4. Welding Equipment: Suitable for high-efficiency welding machines.
5. Electric Vehicles: Applied in traction drives for electric and hybrid vehicles.
Its high voltage and current ratings make it ideal for demanding power electronics applications.

Package

The IPL65R195C7 is packaged in a TO-247 type package. This package provides efficient thermal management and is suitable for high-power applications, making it ideal for use in power electronics.

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