IPN60R360P7SATMA1

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IPN60R360P7SATMA1

+BOM

MOSFET N-CHANNEL 600V 9A SOT223

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series CoolMOS™ P7
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 9A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 360mOhm @ 2.7A, 10V
Vgs(th)(Max) @ Id 4V @ 140µA
Gate Charge(Qg)(Max) @ Vgs 13 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 555 pF @ 400 V
Power Dissipation (Max) 7W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223

概要

Description

The IPN60R360P7SATMA1 is a 600V, 36A Infineon CoolMOS™ P7 power MOSFET designed for high-efficiency switching applications. Key features include:
- Low RDS(on): 360mΩ (max) for reduced conduction losses.
- Fast switching: Optimized for high-frequency operation (e.g., SMPS, motor drives).
- Robustness: Avalanche-rated and improved thermal performance.
- Package: TO-220 (through-hole) for easy mounting.
Ideal for AC/DC converters, PFC stages, and industrial power systems, it balances performance and cost. Check the datasheet for detailed specs.

Equivalent

Equivalent products to the IPN60R360P7SATMA1 (Infineon 600V CoolMOS P7) include:
- STP60R360M2 (STMicroelectronics)
- IPP60R360P7 (Infineon, similar series)
- FCP60R360 (ON Semiconductor)
These are 600V, ~360mΩ MOSFETs with comparable performance. Verify datasheets for exact specs.

Features

The IPN60R360P7SATMA1 is a 600V, 25A CoolMOS™ P7 superjunction MOSFET from Infineon, optimized for high efficiency and robustness. Key features:
- Low RDS(on): 360mΩ (max) at 25A, reducing conduction losses.
- Fast switching: Low gate charge (Qg ≈ 22nC) and output charge (Qoss ≈ 110nC) for minimal switching losses.
- High dv/dt ruggedness: Enhanced reliability in hard-switching applications.
- Avalanche-rated: Withstands high energy pulses (EAS ≈ 240mJ).
- Low thermal resistance: RthJC ≈ 1.5K/W for better heat dissipation.
- Logic-level drive: Compatible with 10V gate drive (VGS).
- Pb-free & RoHS-compliant: Environmentally friendly.
Ideal for SMPS, PFC, and industrial apps requiring high efficiency and durability.

Package

The IPN60R360P7SATMA1 is a 600V CoolMOS™ P7 power MOSFET from Infineon, designed for high-efficiency applications. It comes in a TO-220 package, a common through-hole type known for good thermal performance and ease of mounting. Key specs include 360mΩ on-resistance (RDS(on)) and 10A current rating. Suitable for switching power supplies, motor drives, and lighting.

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