仕様
| 属性 | 値 |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS P6 |
| Factory Pack Quantity | 500 |
| Subcategory | Transistors |
| Part # Aliases | SP001114648 IPP60R125P6XKSA1 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 15.65 mm |
| Length | 10 mm |
| Width | 4.4 mm |
| Unit Weight | 2 g |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 30 A |
| Rds On | 113 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 3.5 V |
| Qg - Gate Charge | 56 nC |
| Pd - Power Dissipation | 219 W |
| Channel Mode | Enhancement |
| Fall Time | 5 ns |
| Rise Time | 9 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 44 ns |
| Typical Turn - On Delay Time | 14 ns |
| Package / Case | TO-220-3 |
概要
Description
The IPP60R125P6 is an N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), designed for high-efficiency power applications. It features a maximum drain-source voltage (Vds) of 600V, a continuous drain current (Id) rating of 60A, and a low Rds(on) value, which minimizes conduction losses.
Ideal for applications such as switch-mode power supplies, DC-DC converters, and motor drives, the IPP60R125P6 offers fast switching speeds and high reliability. Its robust thermal performance allows for effective heat dissipation, while a high breakdown voltage makes it suitable for demanding environments.
The device is available in a TO-220 package, ensuring ease of integration into various circuits. The IPP60R125P6 is part of Infineon's product line, known for its quality and innovation in power semiconductor technology. Its efficient operation helps improve overall energy efficiency, making it a preferred choice for modern electronic designs requiring high performance and reliability.
Ideal for applications such as switch-mode power supplies, DC-DC converters, and motor drives, the IPP60R125P6 offers fast switching speeds and high reliability. Its robust thermal performance allows for effective heat dissipation, while a high breakdown voltage makes it suitable for demanding environments.
The device is available in a TO-220 package, ensuring ease of integration into various circuits. The IPP60R125P6 is part of Infineon's product line, known for its quality and innovation in power semiconductor technology. Its efficient operation helps improve overall energy efficiency, making it a preferred choice for modern electronic designs requiring high performance and reliability.
Equivalent
The IPP60R125P6 is an N-channel MOSFET. Equivalent products include:
1. IRF360
2. STP60NF125
3. APT60M120J
4. FDP60N125
Always verify specifications such as voltage, current, and R_DS(on) to ensure compatibility for your specific application.
1. IRF360
2. STP60NF125
3. APT60M120J
4. FDP60N125
Always verify specifications such as voltage, current, and R_DS(on) to ensure compatibility for your specific application.
Features
The IPP60R125P6 is a high-performance N-channel MOSFET designed for a variety of power applications. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 125A, allowing it to handle significant loads.
3. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.125 ohms, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, allowing for easy drive requirements.
5. Fast Switching: The device features rapid switching capabilities, which minimize switching losses in high-frequency applications.
6. Package Type: Typically housed in a TO-220 or similar package for effective thermal management.
These characteristics make the IPP60R125P6 an ideal choice for applications such as power supplies, inverters, and motor drives.
1. Voltage Rating: It has a drain-source voltage (V_DS) rating of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 125A, allowing it to handle significant loads.
3. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.125 ohms, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, allowing for easy drive requirements.
5. Fast Switching: The device features rapid switching capabilities, which minimize switching losses in high-frequency applications.
6. Package Type: Typically housed in a TO-220 or similar package for effective thermal management.
These characteristics make the IPP60R125P6 an ideal choice for applications such as power supplies, inverters, and motor drives.
Pinout
The IPP60R125P6 is an N-channel MOSFET from Infineon Technologies, featuring a total of 4 pins. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching; applying a voltage here turns the device on.
2. Drain (D): The terminal through which the current flows out when the MOSFET is turned on.
3. Source (S): The terminal through which the current enters the MOSFET when it is conducting.
This MOSFET is designed for use in high-efficiency and high-performance applications, with a maximum continuous drain current rating of 60A and a maximum drain-source voltage rating of 125V. Its low on-resistance and fast switching capabilities make it suitable for applications like power management, motor drives, and converters.
1. Gate (G): Controls the MOSFET's switching; applying a voltage here turns the device on.
2. Drain (D): The terminal through which the current flows out when the MOSFET is turned on.
3. Source (S): The terminal through which the current enters the MOSFET when it is conducting.
This MOSFET is designed for use in high-efficiency and high-performance applications, with a maximum continuous drain current rating of 60A and a maximum drain-source voltage rating of 125V. Its low on-resistance and fast switching capabilities make it suitable for applications like power management, motor drives, and converters.
Manufacturer
The IPP60R125P6 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in the design and manufacture of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive components. Infineon serves various industries, such as automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security solutions. The company is known for its innovations in power electronics, particularly in the areas of IGBTs, MOSFETs, and other components that help improve energy management and performance in electronic devices.
Application
The IPP60R125P6 is a high-performance N-channel MOSFET widely used in various applications, including:
1. Power Supply Circuits: Suitable for low-loss switching in DC-DC converters.
2. Motor Control: Ideal for driving brushless DC motors and inverters.
3. Battery Management Systems: Used in electric vehicles and renewable energy systems for efficient power management.
4. High-Frequency Applications: Applicable in RF amplifiers and other high-speed switching applications.
5. Consumer Electronics: Utilized in power management for devices like laptops and smartphones.
Its features, such as low on-resistance and high thermal stability, make it versatile across these areas.
1. Power Supply Circuits: Suitable for low-loss switching in DC-DC converters.
2. Motor Control: Ideal for driving brushless DC motors and inverters.
3. Battery Management Systems: Used in electric vehicles and renewable energy systems for efficient power management.
4. High-Frequency Applications: Applicable in RF amplifiers and other high-speed switching applications.
5. Consumer Electronics: Utilized in power management for devices like laptops and smartphones.
Its features, such as low on-resistance and high thermal stability, make it versatile across these areas.
Package
The IPP60R125P6 is typically packaged in a TO-247 package, which is a standard format for power transistors that allows for efficient heat dissipation and easy mounting on heat sinks.
