IPP60R190E6

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IPP60R190E6

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MOSFETs N-Ch 650V 20.2A TO220-3 CoolMOS E6

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  • メーカー品番 #IPP60R190E6

  • データシート IPP60R190E6 DataSheet

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仕様

属性
Packaging Tube
Standard Pack Qty 500

概要

Description

The IPP60R190E6 is a high-performance power MOSFET manufactured by Infineon Technologies. It belongs to the CoolMOS™ series, which is known for its high efficiency and excellent thermal performance. The MOSFET is designed for use in various power conversion applications, such as power supplies, solar inverters, and industrial applications.
Key features of the IPP60R190E6 include a voltage rating of 600 volts and a low on-state resistance (R_DS(on)) of 0.19 ohms, which contributes to reduced power losses and enhanced efficiency. Its fast switching speeds enable it to handle high frequency applications effectively, while the device's robust design ensures reliability and longevity even in demanding environments.
The IPP60R190E6 also benefits from Infineon's advanced semiconductor technology, which minimizes switching losses and improves overall performance. Additionally, it comes in a TO-220 package, making it easy to integrate into various circuit designs. Overall, the IPP60R190E6 is a versatile and efficient solution for designers looking to optimize their power management systems.

Equivalent

The IPP60R190E6 is a power MOSFET from Infineon's CoolMOS E6 series. Equivalent products can include MOSFETs with similar voltage, current, and RDS(on) ratings, such as:
1. STMicroelectronics' STP60NF06
2. NXP's PSMN7R0-60YS
3. ON Semiconductor's FDPF12N60NZ
Ensure to verify the specifications and compare them with your application's requirements for a perfect match.

Features

The IPP60R190E6 is a power MOSFET from Infineon Technologies, part of their CoolMOS™ E6 series. This component is designed for high-efficiency power conversion applications. Key features include:
1. Voltage Rating: The MOSFET has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.

2. Current Rating: It supports a continuous drain current (I_D) of approximately 19A, depending on the operating conditions.
3. R_DS(on): Offers a low on-resistance of around 0.19 Ohms, which helps in reducing conduction losses and improving efficiency.
4. Technology: Utilizes superjunction technology, which enhances performance by lowering gate charge and switching losses compared to conventional MOSFETs.
5. Applications: Targeted for use in applications such as power supplies, lighting, and other industrial applications where efficiency is crucial.
6. Package: Typically comes in a TO-220 or similar package, providing effective heat dissipation.
These features make the IPP60R190E6 an efficient choice for high-power and high-efficiency operations, especially in circuits requiring fast switching and low losses.

Pinout

The IPP60R190E6 is a power MOSFET from Infineon's CoolMOS E6 series. It typically comes in a TO-220 package, which is a standard through-hole package for power semiconductors. The TO-220 package has three pins:
1. Gate (G) - This pin receives the input signal that controls the MOSFET’s switching state.
2. Drain (D) - This is the pin through which the main current flows when the MOSFET is in the 'on' state.
3. Source (S) - This is the pin that is connected to the source of the current, generally leading back to the ground or common voltage point in the circuit.
The IPP60R190E6 is used in applications requiring high efficiency and fast switching, such as power supplies and converters. It is designed to handle high voltages and currents, making it suitable for industrial applications.

Manufacturer

The IPP60R190E6 is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components and solutions. The company is involved in designing, producing, and supplying semiconductor solutions for automotive, industrial, cybersecurity, and IoT sectors, among others. Infineon is recognized for its focus on innovation and technology leadership in the semiconductor industry.

Application

The IPP60R190E6 is a power MOSFET commonly used in various applications due to its efficiency and reliability. Key application areas include:
1. Switch Mode Power Supplies (SMPS): Ideal for efficient energy conversion in power supply units.
2. Motor Drives: Used in motor control circuits for industrial and consumer applications.
3. Renewable Energy Systems: Employed in inverters for solar and wind energy systems.
4. Lighting: Utilized in LED drivers for efficient lighting solutions.
5. Automotive: Suitable for use in electric vehicle power management and other automotive electronics.
Its high voltage capabilities and low power loss make it suitable for high-efficiency, high-frequency applications.

Package

The IPP60R190E6 is typically housed in a TO-220 package, which is a common type for discrete semiconductor components.

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