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IPT012N08N5ATMA1
+BOMMOSFET N-CH 80V 300A 8HSOF
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IPT012N08N5ATMA1
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データシート IPT012N08N5ATMA1 DataSheet
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在庫状況7048
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain(Id) @ 25°C | 300A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 1.2mOhm @ 150A, 10V |
| Vgs(th)(Max) @ Id | 3.8V @ 280µA |
| Gate Charge(Qg)(Max) @ Vgs | 223 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 17000 pF @ 40 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-1 |
概要
Description
To understand its applications or specifications, one should refer to a datasheet or product catalog from the manufacturer. These documents typically provide detailed information about features, compatibility, and usage scenarios. If IPT012N08N5ATMA1 is related to electronics, it might denote a semiconductor, microcontroller, or similar component, and you'd find relevant technical data such as voltage ratings, pin configurations, and thermal characteristics in its datasheet. For accurate identification and application, consulting with the manufacturer or a distributor might be necessary.
Equivalent
1. IRFZ44N (International Rectifier / Vishay)
2. NTD4906N (ON Semiconductor)
3. STP80NF10 (STMicroelectronics)
Always verify specific electrical characteristics and packaging requirements to ensure compatibility for your application.
Features
1. N-Channel MOSFET: Designed for efficient switching, it is an N-channel type transistor.
2. Voltage and Current Ratings: It usually features a drain-source voltage (V_DS) of around 80V and a continuous drain current (I_D) of approximately 120A, making it suitable for high-power applications.
3. Low On-Resistance: This component is designed with low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency.
4. Fast Switching: Offers rapid switching capabilities that improve performance in high-frequency applications.
5. Package Type: It often comes in a TO-220 package, which offers good thermal performance and ease of mounting.
6. Applications: It is used in applications such as power management, motor control, DC-DC converters, and other high-efficiency power applications.
These features make it suitable for applications requiring efficient power handling and switching. Always refer to the datasheet for precise specifications and ratings.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET switches on or off, allowing or blocking current flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows into the MOSFET when it is in the "on" state.
3. Source (S): The current flows out through this terminal. It is often connected to the ground or the negative side of the power supply in many applications.
Overall, the IPT012N08N5ATMA1 MOSFET is used in various applications for switching and amplifying electronic signals in power conversion systems.
Manufacturer
Application
1. Automotive Systems: Commonly used in motor drives, power supplies, and battery management systems due to its ability to handle high currents and voltages.
2. Industrial Automation: Utilized in inverters, switch-mode power supplies (SMPS), and motor control systems for efficient power management.
3. Consumer Electronics: Used in power adapters, LED drivers, and other power management applications.
4. Renewable Energy Systems: Employed in solar inverters and other renewable energy conversion systems for efficient energy handling.
These applications benefit from the MOSFET's low on-resistance and high efficiency.