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IR2113STRPBF
+BOMIC GATE DRVR HALF-BRIDGE 16SOIC
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IR2113STRPBF
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データシート IR2113STRPBF DataSheet
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パッケージ SOP-16
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在庫状況6733
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 3.3V ~ 20V |
| Logic Voltage - VILVIH | 6V, 9.5V |
| Current - Peak Output(Source Sink) | 2A, 2A |
| Input Type | Non-Inverting |
| High Side Voltage - Max(Bootstrap) | 600 V |
| Rise / Fall Time(Typ) | 25ns, 17ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
The IR2113STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It is designed to drive N-channel power MOSFETs or IGBT devices in half-bridge configurations. Manufactured by Infineon Technologies, the IR2113STRPBF features an integrated bootstrap diode that simplifies the design by providing efficient high-side and low-side gate drive capability. It operates with a supply voltage range from 10V to 20V and offers a typical output current of 2A.
This driver is notable for its fast switching speeds and robust performance, making it suitable for applications in motor control, power conversion, and induction heating. It also includes built-in protection features such as undervoltage lockout (UVLO) for both the high-side and low-side drivers, which helps prevent erroneous operation under low-voltage conditions. Its surface-mount package enhances thermal performance and allows compact PCB designs. Overall, the IR2113STRPBF offers a reliable solution for controlling power devices in demanding high-voltage applications.
This driver is notable for its fast switching speeds and robust performance, making it suitable for applications in motor control, power conversion, and induction heating. It also includes built-in protection features such as undervoltage lockout (UVLO) for both the high-side and low-side drivers, which helps prevent erroneous operation under low-voltage conditions. Its surface-mount package enhances thermal performance and allows compact PCB designs. Overall, the IR2113STRPBF offers a reliable solution for controlling power devices in demanding high-voltage applications.
Equivalent
The IR2113STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. Equivalent products include:
1. IR2110 - similar specifications with slight differences in parameters.
2. MIC4422 - similar functionality, different pin configuration.
3. FAN7392 - comparable high-side/low-side driver.
4. UCC27714 - similar function, with additional features.
5. TLP250 - opto-isolated alternative.
Always check specific requirements and datasheets to ensure compatibility in your application.
1. IR2110 - similar specifications with slight differences in parameters.
2. MIC4422 - similar functionality, different pin configuration.
3. FAN7392 - comparable high-side/low-side driver.
4. UCC27714 - similar function, with additional features.
5. TLP250 - opto-isolated alternative.
Always check specific requirements and datasheets to ensure compatibility in your application.
Features
The IR2113STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with features that make it suitable for a variety of applications. Key features include:
1. High Voltage Capability: Can handle up to 600V.
2. Dual Output Channels: Drives both high-side and low-side power devices.
3. Bootstrap Circuit: Supports bootstrap power supply for high-side driving.
4. High Speed: Offers fast switching speeds with propagation delays typically around 120ns.
5. Under-Voltage Lockout: Protects against low supply voltages, ensuring reliable operation.
6. CMOS Schmitt-triggered Inputs: Provides noise immunity on input signals.
7. Floating Channel: Capable of switching up to 600V, suitable for high-side device driving.
8. Output Current Capability: Provides up to 2A output current.
9. Latch Immunity: Designed to withstand voltage transients and other disturbances.
These features make the IR2113STRPBF ideal for motor drives, power supply circuits, and various switching applications.
1. High Voltage Capability: Can handle up to 600V.
2. Dual Output Channels: Drives both high-side and low-side power devices.
3. Bootstrap Circuit: Supports bootstrap power supply for high-side driving.
4. High Speed: Offers fast switching speeds with propagation delays typically around 120ns.
5. Under-Voltage Lockout: Protects against low supply voltages, ensuring reliable operation.
6. CMOS Schmitt-triggered Inputs: Provides noise immunity on input signals.
7. Floating Channel: Capable of switching up to 600V, suitable for high-side device driving.
8. Output Current Capability: Provides up to 2A output current.
9. Latch Immunity: Designed to withstand voltage transients and other disturbances.
These features make the IR2113STRPBF ideal for motor drives, power supply circuits, and various switching applications.
Pinout
The IR2113STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is commonly used in applications requiring the driving of two independent N-channel power devices. The device is encapsulated in a 14-pin SOIC (Small Outline Integrated Circuit) package. Here is a concise description of its pin count and functions:
1. VCC: Supply voltage for the low-side output.
2. VB: Supply voltage for the high-side floating channel.
3. HO: High-side output.
4. VS: High-side floating supply return.
5. LO: Low-side output.
6. COM: Common ground reference for the low-side circuitry.
7. HIN: Logic input for high-side gate driver.
8. LIN: Logic input for low-side gate driver.
9. VDD: Logic supply voltage.
10. SD: Shutdown pin; used to disable both outputs (active low).
11. VSS: Logic ground.
12. NC: Not connected.
13. NC: Not connected.
14. NC: Not connected.
This configuration enables the IR2113STRPBF to deliver high current and fast switching times, making it suitable for a wide range of industrial applications.
1. VCC: Supply voltage for the low-side output.
2. VB: Supply voltage for the high-side floating channel.
3. HO: High-side output.
4. VS: High-side floating supply return.
5. LO: Low-side output.
6. COM: Common ground reference for the low-side circuitry.
7. HIN: Logic input for high-side gate driver.
8. LIN: Logic input for low-side gate driver.
9. VDD: Logic supply voltage.
10. SD: Shutdown pin; used to disable both outputs (active low).
11. VSS: Logic ground.
12. NC: Not connected.
13. NC: Not connected.
14. NC: Not connected.
This configuration enables the IR2113STRPBF to deliver high current and fast switching times, making it suitable for a wide range of industrial applications.
Manufacturer
The IR2113STRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. The company is known for its expertise in power semiconductors, microcontrollers, sensors, and security solutions. Infineon's products are widely used in various industries, including automotive, industrial, consumer electronics, and communication technologies. The company's focus is on providing innovative solutions that enhance energy efficiency, mobility, and security.
Application
The IR2113STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. Its application areas include motor drives, power supplies, and inverters. It is commonly used in industrial motor control systems, automotive applications, and solar inverters. Additionally, it is suitable for use in uninterruptible power supplies (UPS), and appliances that require efficient and reliable switching of high-power devices. The driver is designed to provide efficient gate driving in both high-side and low-side configurations, making it versatile for various power electronics applications.
Package
The IR2113STRPBF is packaged in an SOIC-16 package, which is a surface-mount device type with 16 pins. This package type is suitable for compact applications and allows for efficient thermal management and ease of integration on printed circuit boards.
