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IRF1407PBF
+BOMMOSFET N-CH 75V 130A TO220AB
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF1407PBF
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データシート IRF1407PBF DataSheet
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パッケージ TO-220-3
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在庫状況3570
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 75 V |
| Current-ContinuousDrain(Id)@25°C | 130A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 7.8mOhm @ 78A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 250 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5600 pF @ 25 V |
| PowerDissipation(Max) | 330W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概要
Description
This particular MOSFET features an N-channel configuration, allowing it to control large currents and voltages efficiently. Key specifications include a maximum drain-to-source voltage (V_DS) of 75V and a continuous drain current (I_D) of 130A, making it suitable for high-power applications. The device has a low on-state resistance (R_DS(on)), which minimizes power losses and improves efficiency in switching applications.
The IRF1407PBF is typically employed in applications such as motor drives, DC-DC converters, and power tools. It features fast switching speeds, which help in reducing switching losses. The MOSFET is encased in a TO-220AB package, providing good thermal conductivity and ease of mounting.
Overall, the IRF1407PBF is valued for its robustness, high current handling, and efficiency, making it a popular choice in power electronic designs.
Equivalent
Features
1. Voltage and Current Ratings: It has a drain-source voltage (Vds) of 75V and can handle a continuous current (Id) of up to 130A at 25°C.
2. On-Resistance: The device offers a low on-resistance (Rds(on)) of about 13 mΩ, contributing to high efficiency and reduced power losses.
3. Gate Threshold Voltage: The gate threshold voltage ranges from 2.0V to 4.0V, facilitating compatibility with standard logic-level driving.
4. Package and Mounting: It is available in a TO-220 package, which is suitable for through-hole mounting and provides good thermal performance.
5. Thermal Characteristics: The MOSFET features a junction-to-case thermal resistance (RθJC) of 0.75°C/W, allowing for efficient heat dissipation.
6. Applications: Ideal for applications like motor controllers, power supply circuits, and DC-DC converters, thanks to its robust performance and reliability.
These features make the IRF1407PBF suitable for various power management tasks, ensuring high efficiency and reliability in demanding environments.
Pinout
1. Gate (G): This pin controls the MOSFET's switching state. By applying a voltage to the gate, you can turn the MOSFET on or off, allowing or preventing current flow between the drain and source.
2. Drain (D): The drain is where the load current enters the MOSFET when it is in the "on" state. It is connected to the positive side of the circuit or load.
3. Source (S): The source is the output for the load current. It is connected to the ground or the negative side of the circuit.
The IRF1407PBF is used in applications requiring high-speed switching and efficiency, such as power supply regulation, motor control, and other power management tasks. Its capabilities include handling high currents and voltages, making it suitable for various industrial and consumer electronics applications.
Manufacturer
Application
1. Power Supplies: Used in switch-mode power supplies (SMPS) for converting electrical power efficiently.
2. Motor Drives: Suitable for driving motors in various industrial and consumer applications.
3. Inverters: Utilized in DC-AC inverters for renewable energy systems.
4. Automotive Systems: Employed in automotive electronics for managing power distribution.
5. DC-DC Converters: Integrated into DC-DC converters for voltage regulation and conversion.
6. Lighting Systems: Applied in LED drivers and other lighting control systems for efficient power management.
These applications leverage the MOSFET's fast switching speed, low on-resistance, and high current capacity.