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IRF1407STRLPBF
+BOMMOSFET N-CH 75V 100A D2PAK
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF1407STRLPBF
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データシート IRF1407STRLPBF DataSheet
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在庫状況7928
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仕様
| 属性 | 値 |
| Series | HEXFET® |
| PartStatus | Last Time Buy |
| BaseProductNumber | IRF1407 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 75 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 7.8mOhm @ 78A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 250 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5600 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 200W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
| Package | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概要
Description
The device is housed in a TO-220 package, facilitating effective thermal management and easy mounting on heat sinks for improved performance. The IRF1407 also offers fast switching speeds, contributing to higher efficiency in switching applications. Additionally, its low gate threshold voltage (V_GS(th)) allows for easy driving with standard logic levels.
This MOSFET is particularly valued for its robustness and reliability in demanding environments, making it a popular choice among engineers and designers seeking efficient power solutions.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 60A, offering robust performance in demanding scenarios.
3. Low On-Resistance: With a low R_DS(on) typically around 16 mΩ, it ensures minimal conduction losses and efficient power management.
4. Fast Switching Speed: It provides rapid switching capabilities, beneficial for high-frequency applications.
5. Thermal Performance: The MOSFET features a maximum junction temperature of 175°C, allowing it to operate reliably in high-temperature environments.
6. TO-220 Package: The device is housed in a TO-220 package, facilitating easy heat dissipation and mounting.
These characteristics make the IRF1407STRLPBF suitable for applications like DC-DC converters, motor control, and power management systems.
Pinout
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which current exits the MOSFET.
3. Source (S) - The terminal through which current enters the MOSFET.
4-8. Drain (D1, D2, D3, D4) - Additional drain terminals, providing parallel paths for current flow, enhancing current handling capacity.
The IRF1407 is designed for high-speed switching applications and features low on-resistance for efficient power management. It is commonly used in power supplies, motor drives, and other applications requiring efficient power handling.
Manufacturer
Infineon is particularly known for its expertise in power management and control technologies, making it a key player in the development of components that enhance energy efficiency in applications ranging from electric vehicles to renewable energy systems. The IRF1407STRLPBF itself is a N-channel MOSFET designed for high-efficiency switching applications, reflecting Infineon's commitment to advanced semiconductor technology.
Application
1. Power Management: High-efficiency switching power supplies and DC-DC converters.
2. Motor Control: Drive circuits for electric motors and servo systems.
3. Lighting: LED drivers and dimming applications.
4. Telecommunications: Signal amplification and RF applications.
5. Automotive: Power distribution and control systems in vehicles.
6. Consumer Electronics: Power regulation in devices like TVs and computers.
Its high-speed switching and low on-resistance make it suitable for these diverse applications.