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IRF2807PBF
+BOMMOSFET N-CH 75V 82A TO220AB
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF2807PBF
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データシート IRF2807PBF DataSheet
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パッケージ TO-220-3
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在庫状況6274
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain(Id) @ 25°C | 82A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 13mOhm @ 43A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 160 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3820 pF @ 25 V |
| Power Dissipation (Max) | 230W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
概要
Description
- Voltage Rating: 75V
- Current Rating: 82A (continuous)
- Low On-Resistance (RDS(on)): 8.5mΩ (max at 10V VGS)
- Fast Switching: Suitable for PWM and motor control
- Package: TO-220AB (through-hole)
Common uses include DC-DC converters, motor drives, and power management in automotive, industrial, and renewable energy systems. It operates efficiently with a gate threshold voltage (VGS(th)) of 2-4V and is avalanche-rated for ruggedness.
Pros: High current handling, low conduction losses.
Cons: Requires proper heat dissipation due to power dissipation limits.
For optimal performance, ensure adequate gate drive (≥10V) and thermal management.
Equivalent
- IRF2807SPBF (Same specs, different package)
- IRFB3206PBF (75V, 120A, 6.0mΩ)
- IRFB3307PBF (75V, 120A, 5.6mΩ)
- STP80NF75 (75V, 80A, 9.0mΩ)
- FDP8878 (80V, 120A, 5.3mΩ)
Check datasheets for exact compatibility.
Features
- Voltage Rating: 75V
- Current Rating: 82A (continuous), 330A (pulsed)
- Low On-Resistance (RDS(on)): 8.5 mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency applications
- Gate Charge (Qg): 110nC (typical)
- Avalanche Energy Rated: Robust for inductive loads
- Package: TO-220AB (through-hole)
- Applications: Power supplies, motor control, DC-DC converters
It offers high current handling, low conduction losses, and reliable performance in power electronics.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Main current-carrying terminal (connected to the load).
3. Source (S) – Common return path for current.
Key Features:
- N-Channel MOSFET
- 75V Drain-Source Voltage (VDS)
- 82A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on) = 8.5mΩ max)
- Logic-Level Gate Drive (4V threshold)
Commonly used in power switching, motor control, and DC-DC converters.
Application
1. Switching Power Supplies – Efficient voltage conversion in DC-DC and AC-DC systems.
2. Motor Control – Drives motors in automotive, industrial, and robotics applications.
3. Inverters – Converts DC to AC in solar power systems and UPS units.
4. LED Drivers – Controls current in high-power LED lighting.
5. Automotive Systems – Used in electronic control units (ECUs) and battery management.
Its low on-resistance and high current handling (75V, 82A) make it ideal for high-efficiency, high-power applications.
