IRF510

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IRF510

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MOSFET N-CH 100V 5.6A TO220AB

  • メーカービシェイ・シリコニクス

  • メーカー品番 #IRF510

  • データシート IRF510 DataSheet

  • 在庫状況19365

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仕様

属性
Supplier Vishay Siliconix
Package / Case Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 5.6A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 540mOhm @ 3.4A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 8.3 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 180 pF @ 25 V
Power Dissipation (Max) 43W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

概要

Description

The IRF510 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in electronic circuits for switching and amplification purposes. With a drain-source voltage rating of 100V and a continuous drain current of 5.6A, it is suitable for medium-power applications. The IRF510 features a low on-resistance, typically around 0.54 ohms, which minimizes power loss and heat generation during operation.
This MOSFET is commonly used in audio amplifiers, power supplies, motor drivers, and RF amplifiers due to its efficiency and reliability. It operates with a gate-source voltage, making it compatible with microcontroller and logic-level inputs, although often a gate driver is used to ensure optimal switching performance.
The IRF510 is housed in a TO-220 package, which allows for easy mounting and effective heat dissipation with the aid of a heatsink. When using this component, it's essential to consider the thermal management and ensure that the voltage and current ratings are not exceeded to prevent damage.

Equivalent

Equivalent products to the IRF510 MOSFET include the IRF520, IRF530, and NTE2396. These alternatives offer similar voltage and current ratings and are often used in switching and amplification applications. Ensure you verify the specific requirements of your circuit against the datasheets for compatibility, as parameters like threshold voltage and input capacitance may differ.

Features

The IRF510 is an N-channel MOSFET primarily used for switching and amplification purposes in electronic circuits. Key features include:
1. Voltage and Current Ratings: It typically operates at a maximum drain-source voltage (V_DS) of 100V and can handle a continuous drain current (I_D) of approximately 5.6A.

2. Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically around 2-4V, making it suitable for low voltage digital interfacing.
3. On-Resistance: The on-state resistance (R_DS(on)) is relatively low, around 0.54 ohms, which contributes to efficient power handling with minimal loss.
4. Package Type: It usually comes in a TO-220 package, which provides good thermal performance with a convenient mounting option.
5. Switching Speed: The IRF510 offers fast switching capabilities, beneficial for applications requiring quick response times.
6. Applications: Commonly used in power supplies, audio amplifiers, motor drivers, and RF amplifiers.
These features make the IRF510 a versatile choice for various electronic projects where moderate power handling is essential.

Pinout

The IRF510 is an N-channel MOSFET commonly used for switching and amplification purposes. It typically comes in a TO-220 package and features three pins:
1. Gate (G): This pin is used to control the MOSFET, turning it on or off. A voltage applied to the gate pin relative to the source controls the current flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows from the MOSFET when it is in the 'on' state. It is connected to the load in most applications.
3. Source (S): The source is the terminal through which the current exits the MOSFET. It usually connects to the ground or negative side of the circuit for N-channel MOSFETs.
The IRF510 is popular in applications such as RF amplifiers and audio amplifiers due to its ease of use and availability. It offers a maximum drain-source voltage of 100V and can handle continuous currents up to 5.6A.

Manufacturer

The IRF510 is a type of power MOSFET that was originally manufactured by International Rectifier. International Rectifier, a company that was founded in 1947, specialized in power management technology, including development and production of power semiconductors such as MOSFETs, IGBTs, and other related components.
In 2015, International Rectifier was acquired by Infineon Technologies, a leading semiconductor manufacturer based in Germany. Infineon Technologies is known for its innovations in automotive, industrial, and multi-market sectors, as well as for its focus on energy efficiency, mobility, and security solutions. Following the acquisition, Infineon has continued to produce and support many of International Rectifier's products, including the IRF510.
As a result, Infineon Technologies can be seen as the primary manufacturer of the IRF510 MOSFET following its acquisition of International Rectifier. Infineon operates globally and is recognized as a major player in the semiconductor industry, offering a wide range of products for various applications.

Application

The IRF510 is a N-channel MOSFET commonly used in various applications due to its efficiency and reliability. Key application areas include:
1. Switching Power Supplies: Utilized for efficient DC-DC conversion.
2. Audio Amplifiers: Serves as an output stage for audio frequency amplification.
3. RF Amplification: Used in RF amplifier circuits within amateur radio and communication systems.
4. Motor Drivers: Powers DC motors in robotics and industrial automation.
5. LED Drivers: Controls high-power LEDs in lighting applications.
6. Inverters and Converters: Part of the circuitry in inverter designs for solar power systems and battery chargers.
7. General Switching Applications: Suitable for switching applications requiring high-speed and low-loss performance.
Its robust design makes it versatile for both hobbyist projects and professional electronic designs.

Package

The IRF510 is typically available in a TO-220 package. This package type is commonly used for power transistors and allows for efficient heat dissipation, making it suitable for various electronic applications requiring moderate power handling.

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