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IRF5210LPBF
+BOMMOSFET P-CH 100V 38A TO262
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF5210LPBF
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データシート IRF5210LPBF DataSheet
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在庫状況8307
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仕様
| 属性 | 値 |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Last Time Buy |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 38A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 60mOhm @ 38A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 230 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2780 pF @ 25 V |
| Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262 |
概要
Description
The IRF5210LPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its high efficiency and robust performance in switching applications. It is designed to handle high current and voltage with low on-resistance, making it suitable for use in power management, motor drives, and converter circuits. The "LPBF" suffix indicates lead-free packaging, aligning with environmental standards.
Key specifications include:
- Drain-source voltage (V_DS) rating of 100V.
- Continuous drain current (I_D) capacity of around 43A.
- Low on-state resistance (R_DS(on)) for reduced power loss.
The IRF5210LPBF is housed in a TO-220 package, which offers good thermal performance and is easy to mount on PCBs. It is often used in automotive, industrial, and consumer electronics where efficient power control is crucial.
Overall, it combines reliability with performance, making it a popular choice for designers needing a dependable power MOSFET solution.
Key specifications include:
- Drain-source voltage (V_DS) rating of 100V.
- Continuous drain current (I_D) capacity of around 43A.
- Low on-state resistance (R_DS(on)) for reduced power loss.
The IRF5210LPBF is housed in a TO-220 package, which offers good thermal performance and is easy to mount on PCBs. It is often used in automotive, industrial, and consumer electronics where efficient power control is crucial.
Overall, it combines reliability with performance, making it a popular choice for designers needing a dependable power MOSFET solution.
Equivalent
The IRF5210LPBF is a P-channel MOSFET. Equivalent products include the FQP27P06 from ON Semiconductor, the STP80PF55 from STMicroelectronics, and the SI7463DP from Vishay. These alternatives have similar voltage and current ratings. Always verify the specific electrical characteristics and package compatibility to ensure they meet your application's requirements.
Features
The IRF5210LPBF is a P-channel MOSFET designed for high-power applications. Its key features include:
1. P-Channel MOSFET: It operates with a negative gate-source voltage, which makes it suitable for high-side switching applications.
2. Low On-Resistance: It typically has a low R_ds(on), providing efficient performance and minimal power loss during operation.
3. High Current Capability: It can handle a continuous drain current up to a specified limit, often used in power applications.
4. Fast Switching Speed: The MOSFET is capable of high-speed switching, making it ideal for applications requiring rapid on/off control.
5. Robust Design: It includes features for enhanced reliability and performance, such as avalanche energy ratings.
6. Lead-Free: The "PBF" suffix indicates it is lead-free, complying with RoHS standards.
7. Package Type: It is available in industry-standard packages, facilitating easy integration into various circuit designs.
These features make the IRF5210LPBF suitable for applications such as power management, motor control, and other high-efficiency power conversion tasks.
1. P-Channel MOSFET: It operates with a negative gate-source voltage, which makes it suitable for high-side switching applications.
2. Low On-Resistance: It typically has a low R_ds(on), providing efficient performance and minimal power loss during operation.
3. High Current Capability: It can handle a continuous drain current up to a specified limit, often used in power applications.
4. Fast Switching Speed: The MOSFET is capable of high-speed switching, making it ideal for applications requiring rapid on/off control.
5. Robust Design: It includes features for enhanced reliability and performance, such as avalanche energy ratings.
6. Lead-Free: The "PBF" suffix indicates it is lead-free, complying with RoHS standards.
7. Package Type: It is available in industry-standard packages, facilitating easy integration into various circuit designs.
These features make the IRF5210LPBF suitable for applications such as power management, motor control, and other high-efficiency power conversion tasks.
Pinout
The IRF5210LPBF is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for switching and amplifying electronic signals. It typically comes in a TO-220 package which generally includes three pins:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate modulates the flow of current between the drain and source.
2. Drain (D): This pin is the output of the MOSFET where the current flows out from when the device is in the 'on' state.
3. Source (S): It serves as the input terminal for the current that flows through the device.
The IRF5210LPBF is used in various high-power and high-speed applications, such as motor drivers and power supply circuits, because of its capability to handle significant voltages and currents. It is important to consult the datasheet for detailed electrical characteristics and safe operating conditions.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate modulates the flow of current between the drain and source.
2. Drain (D): This pin is the output of the MOSFET where the current flows out from when the device is in the 'on' state.
3. Source (S): It serves as the input terminal for the current that flows through the device.
The IRF5210LPBF is used in various high-power and high-speed applications, such as motor drivers and power supply circuits, because of its capability to handle significant voltages and currents. It is important to consult the datasheet for detailed electrical characteristics and safe operating conditions.
Manufacturer
The IRF5210LPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in designing, developing, manufacturing, and marketing a wide range of semiconductor solutions. They focus on delivering products and systems for automotive, industrial power control, power management, digital security solutions, and other applications. Infineon is known for its innovation in the development of efficient electronic solutions, aiming to provide energy-efficient and environmentally friendly technologies that contribute to a sustainable future.
Application
The IRF5210LPBF is a P-channel MOSFET commonly used in various applications due to its high current capacity and low on-resistance. Key application areas include power management systems, where it is used for load switching and voltage regulation. It is also employed in DC-DC converters and power supply circuits for efficient power delivery. In automotive electronics, it serves roles in motor control and battery management systems. Additionally, the IRF5210LPBF is used in industrial equipment for tasks such as solenoid and relay driving, as well as in consumer electronics for managing power loads efficiently.
Package
The IRF5210LPBF is a HEXFET power MOSFET packaged in a D2PAK (TO-263) type. This surface-mount package is designed for high efficiency and ease of use in power applications, offering a compact size suitable for automated assembly processes.
