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IRF540ZPBF
+BOMMOSFET N-CH 100V 36A TO220AB
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF540ZPBF
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データシート IRF540ZPBF DataSheet
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在庫状況5034
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | HEXFET® |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 36A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 26.5mOhm @ 22A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 63 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1770 pF @ 25 V |
| PowerDissipation(Max) | 92W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
| Package/Case | TO-220-3 |
| BaseProductNumber | IRF540 |
概要
Description
The IRF540ZPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in various electronic applications, including switching power supplies, motor drivers, and automotive circuits. It features a low on-resistance (R_DS(on)) of approximately 0.044 ohms, allowing for efficient power conduction and minimal heat generation.
With a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 33A at 25°C, the IRF540ZPBF is suitable for high-power applications. Its gate threshold voltage (V_GS(th)) ranges from 2 to 4V, enabling operation with standard logic-level signals.
The device comes in a TO-220 package, facilitating easy heat dissipation via a heatsink. It is ideal for designs requiring high efficiency and reliability. The "Z" in the part number indicates that it is a RoHS-compliant component, making it suitable for environmentally-friendly designs. Overall, the IRF540ZPBF is a versatile and robust MOSFET for a range of electronic projects.
With a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 33A at 25°C, the IRF540ZPBF is suitable for high-power applications. Its gate threshold voltage (V_GS(th)) ranges from 2 to 4V, enabling operation with standard logic-level signals.
The device comes in a TO-220 package, facilitating easy heat dissipation via a heatsink. It is ideal for designs requiring high efficiency and reliability. The "Z" in the part number indicates that it is a RoHS-compliant component, making it suitable for environmentally-friendly designs. Overall, the IRF540ZPBF is a versatile and robust MOSFET for a range of electronic projects.
Equivalent
Equivalent products to the IRF540ZPBF include the IRF540, IRF540N, STP40NF06, and FQP30N06L. These MOSFETs share similar voltage and current ratings, making them suitable alternatives depending on your specific application requirements. Always verify datasheets for precise specifications and ensure compatibility with your circuit design.
Features
The IRF540ZPBF is an N-channel MOSFET widely used in various applications for its high efficiency and performance. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for medium to high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 33A, allowing for substantial current handling capabilities in power applications.
3. R_DS(on): It offers a low on-resistance of around 0.044 ohms, minimizing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling it to be efficiently driven by low-voltage logic levels.
5. Package Type: Typically available in TO-220 package, ensuring good thermal performance and ease of mounting.
6. Fast Switching Speed: Suitable for high-frequency applications, enhancing overall system efficiency.
7. Applications: Commonly used in power supplies, motor control, and automotive systems.
These features make the IRF540ZPBF a versatile choice for designers and engineers.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for medium to high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 33A, allowing for substantial current handling capabilities in power applications.
3. R_DS(on): It offers a low on-resistance of around 0.044 ohms, minimizing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling it to be efficiently driven by low-voltage logic levels.
5. Package Type: Typically available in TO-220 package, ensuring good thermal performance and ease of mounting.
6. Fast Switching Speed: Suitable for high-frequency applications, enhancing overall system efficiency.
7. Applications: Commonly used in power supplies, motor control, and automotive systems.
These features make the IRF540ZPBF a versatile choice for designers and engineers.
Pinout
The IRF540ZPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the output current flows out. The drain is connected to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. The source is where current enters the MOSFET.
The IRF540ZPBF is designed for high-speed switching applications and can handle a high voltage (up to 100V) and significant current (up to 33A). It is commonly used in power management, motor control, and switching applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the output current flows out. The drain is connected to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. The source is where current enters the MOSFET.
The IRF540ZPBF is designed for high-speed switching applications and can handle a high voltage (up to 100V) and significant current (up to 33A). It is commonly used in power management, motor control, and switching applications.
Manufacturer
The IRF540ZPBF is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in developing and producing a wide range of semiconductor solutions and is a leading provider in various sectors, including automotive, industrial power control, and security technologies.
The company focuses on innovative technologies that enhance energy efficiency, reliability, and connectivity in electronic devices. Infineon's products are used in diverse applications such as electric vehicles, renewable energy systems, and smart home devices, making them integral to advancing modern technology and sustainability.
The IRF540ZPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely recognized for its high efficiency and performance in power electronics applications. Its characteristics, such as high voltage and current handling capabilities, make it suitable for use in power supplies, motor control, and other switching applications.
The company focuses on innovative technologies that enhance energy efficiency, reliability, and connectivity in electronic devices. Infineon's products are used in diverse applications such as electric vehicles, renewable energy systems, and smart home devices, making them integral to advancing modern technology and sustainability.
The IRF540ZPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely recognized for its high efficiency and performance in power electronics applications. Its characteristics, such as high voltage and current handling capabilities, make it suitable for use in power supplies, motor control, and other switching applications.
Application
The IRF540ZPBF is an N-channel MOSFET widely used in various applications, including:
1. Power Switching: Ideal for high-speed switching in power supplies and converters.
2. Motor Control: Employed in driving DC motors and inverters for robotics and automation.
3. Battery Management: Used in battery chargers and protection circuits.
4. Lighting: Suitable for LED drivers and dimming applications.
5. Audio Amplifiers: Utilized in high-power audio amplification circuits.
6. Power Regulation: Found in voltage regulators and DC-DC converters.
Its high current capacity and low on-resistance make it efficient for these applications.
1. Power Switching: Ideal for high-speed switching in power supplies and converters.
2. Motor Control: Employed in driving DC motors and inverters for robotics and automation.
3. Battery Management: Used in battery chargers and protection circuits.
4. Lighting: Suitable for LED drivers and dimming applications.
5. Audio Amplifiers: Utilized in high-power audio amplification circuits.
6. Power Regulation: Found in voltage regulators and DC-DC converters.
Its high current capacity and low on-resistance make it efficient for these applications.
Package
The IRF540ZPBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is commonly used for power MOSFETs in various applications.
