仕様
| 属性 | 値 |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 2.9A |
| Rds On(Max) @ Id Vgs | 90mOhm @ 2.9A, 4.5V |
| Vgs(th)(Max) @ Id | 1.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 9.6nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 650pF @ 16V |
| Power - Max | 960mW |
| Mounting Type | Surface Mount |
