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IRF630NPBF
+BOMMOSFET N-CH 200V 9.3A TO220AB
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF630NPBF
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データシート IRF630NPBF DataSheet
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パッケージ TO-220-3
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在庫状況5572
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 9.3A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 300mOhm @ 5.4A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 575 pF @ 25 V |
| Power Dissipation (Max) | 82W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
概要
Description
The IRF630NPBF is built with advanced process technology, offering fast switching speeds and robust performance. It comes in a TO-220 package, which provides good thermal performance and easy mounting. The MOSFET is also characterized by its high avalanche energy rating and ruggedness, making it suitable for use in demanding environments.
Overall, the IRF630NPBF is valued for its efficiency, speed, and reliability in various power conversion and switching applications.
Equivalent
Features
1. VDSS Rating: It has a drain-source voltage (VDSS) rating of 200V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current of up to 9A at 25°C.
3. RDS(on): The on-resistance is low, typically around 0.4 ohms, which minimizes power loss and improves efficiency.
4. Fast Switching: The MOSFET is designed for fast switching speeds, enhancing its performance in high-frequency applications.
5. TO-220 Package: It comes in a TO-220 package, which provides good thermal performance and is easy to mount.
6. Thermal Resistance: The junction-to-case thermal resistance is relatively low, aiding in heat dissipation.
7. Safe Operating Area: It has a robust safe operating area, ensuring reliability under various load conditions.
These features make the IRF630NPBF ideal for use in power supplies, motor control, and other applications requiring efficient power switching.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): This pin is connected to the load. The drain-source current flows when the MOSFET is in the 'on' state.
3. Source (S): This pin is connected to the ground or the negative supply voltage. It is the return path for the current flowing through the drain.
The IRF630NPBF is used for switching applications and power amplification due to its ability to handle high voltage and current.
Manufacturer
Application
1. Power Supplies: Used in switched-mode power supplies for efficient power conversion.
2. Motor Control: Suitable for driving motors in industrial and consumer electronics.
3. DC-DC Converters: Utilized in voltage regulation and conversion circuits.
4. Lighting: Employed in LED and other lighting applications for dimming and power management.
5. Audio Amplifiers: Acts as a switch in high-power audio amplification systems.
6. Uninterruptible Power Supplies (UPS): Plays a role in battery charging and inverter circuits.
These characteristics make it suitable for various high-frequency and high-efficiency applications.