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IRF6665TRPBF
+BOMIRF6665 - 12V-300V N-CHANNEL POW
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メーカーインターナショナル・レクティファイアー
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メーカー品番 #IRF6665TRPBF
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データシート IRF6665TRPBF DataSheet
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在庫状況21769
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Rochester Electronics, LLC |
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 4.2A (Ta), 19A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 62mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 13 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 530 pF @ 25 V |
| PowerDissipation(Max) | 2.2W (Ta), 42W (Tc) |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DIRECTFET™ SH |
概要
Description
The IRF6665TRPBF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that belongs to the HEXFET® Power MOSFET series, manufactured by Infineon Technologies (formerly International Rectifier). This device is designed for high-efficiency power management applications, offering low on-state resistance and fast switching capabilities.
Key features of the IRF6665TRPBF include:
1. Low R_DS(on): The low drain-to-source on-resistance reduces power losses and increases efficiency, making it suitable for high-frequency applications.
2. Fast Switching: The device's quick switching speed helps improve efficiency and performance in dynamic environments.
3. D-Pak Package: It comes in a D-Pak (TO-252) surface-mount package, which provides efficient thermal performance and is suitable for compact PCBs.
4. Applications: This MOSFET is commonly used in DC-DC converters, power management systems, motor drives, and other applications requiring efficient power handling.
The IRF6665TRPBF is ideal for designers seeking reliable and efficient solutions for power conversion and management in various electronic devices.
Key features of the IRF6665TRPBF include:
1. Low R_DS(on): The low drain-to-source on-resistance reduces power losses and increases efficiency, making it suitable for high-frequency applications.
2. Fast Switching: The device's quick switching speed helps improve efficiency and performance in dynamic environments.
3. D-Pak Package: It comes in a D-Pak (TO-252) surface-mount package, which provides efficient thermal performance and is suitable for compact PCBs.
4. Applications: This MOSFET is commonly used in DC-DC converters, power management systems, motor drives, and other applications requiring efficient power handling.
The IRF6665TRPBF is ideal for designers seeking reliable and efficient solutions for power conversion and management in various electronic devices.
Equivalent
The IRF6665TRPBF is a Power MOSFET from Infineon. Equivalent products could include:
1. IRF6665 - without the TRPBF suffix.
2. NXP PSMN7R0-25YLD - similar specifications.
3. ON Semiconductor NTMFS5C450NL - another close match.
4. STMicroelectronics STL75N4LLF6 - comparable specs.
It's important to verify the specifications and pin configurations, as exact matches can vary between manufacturers.
1. IRF6665 - without the TRPBF suffix.
2. NXP PSMN7R0-25YLD - similar specifications.
3. ON Semiconductor NTMFS5C450NL - another close match.
4. STMicroelectronics STL75N4LLF6 - comparable specs.
It's important to verify the specifications and pin configurations, as exact matches can vary between manufacturers.
Features
The IRF6665TRPBF is a power MOSFET from Infineon Technologies, designed for high-efficiency applications. Key features include:
1. N-Channel MOSFET: Facilitates efficient switching and conductivity.
2. Voltage and Current Ratings: Drain-to-source voltage rated at 30V and continuous drain current of up to 90A.
3. Low On-Resistance: Features a low R_DS(on) value, enhancing efficiency by reducing power losses during operation.
4. Fast Switching Performance: Designed for high-speed performance, making it suitable for applications requiring quick response times.
5. Package Type: Offered in a PowerPAK SO-8 package, which provides a compact footprint for space-constrained designs.
6. Thermal Performance: Good thermal characteristics to handle high power levels.
7. Applications: Ideal for use in synchronous rectification, DC-DC converters, motor drives, and other power management applications.
8. RoHS Compliant: Meets environmental standards by being free of lead and other hazardous substances.
These features make the IRF6665TRPBF well-suited for applications needing compact, efficient, and reliable power switching solutions.
1. N-Channel MOSFET: Facilitates efficient switching and conductivity.
2. Voltage and Current Ratings: Drain-to-source voltage rated at 30V and continuous drain current of up to 90A.
3. Low On-Resistance: Features a low R_DS(on) value, enhancing efficiency by reducing power losses during operation.
4. Fast Switching Performance: Designed for high-speed performance, making it suitable for applications requiring quick response times.
5. Package Type: Offered in a PowerPAK SO-8 package, which provides a compact footprint for space-constrained designs.
6. Thermal Performance: Good thermal characteristics to handle high power levels.
7. Applications: Ideal for use in synchronous rectification, DC-DC converters, motor drives, and other power management applications.
8. RoHS Compliant: Meets environmental standards by being free of lead and other hazardous substances.
These features make the IRF6665TRPBF well-suited for applications needing compact, efficient, and reliable power switching solutions.
Pinout
The IRF6665TRPBF is a power MOSFET typically used for switching applications. It is housed in a standard electronic package that can vary, but it commonly comes in an SO-8 package. The pin count in this package is 8. The typical pin configuration for an SO-8 package MOSFET is:
1. Source (S)
2. Source (S)
3. Source (S)
4. Gate (G)
5. Drain (D)
6. Drain (D)
7. Drain (D)
8. Drain (D)
The functions of these pins are as follows:
- Gate (G): Controls the operation of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
- Source (S): The source terminal through which current exits the transistor.
- Drain (D): The drain terminal through which current enters the transistor.
This MOSFET is used for high-speed switching applications, enabling efficient power management in various electronic devices.
1. Source (S)
2. Source (S)
3. Source (S)
4. Gate (G)
5. Drain (D)
6. Drain (D)
7. Drain (D)
8. Drain (D)
The functions of these pins are as follows:
- Gate (G): Controls the operation of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
- Source (S): The source terminal through which current exits the transistor.
- Drain (D): The drain terminal through which current enters the transistor.
This MOSFET is used for high-speed switching applications, enabling efficient power management in various electronic devices.
Manufacturer
The IRF6665TRPBF is manufactured by Infineon Technologies. Infineon Technologies is a leading global semiconductor company that develops and produces a wide range of semiconductor solutions, including microcontrollers, sensors, automotive and industrial power modules, and security ICs. The company is known for its focus on energy efficiency, mobility, and security applications, catering to industries such as automotive, industrial electronics, and consumer electronics. Infineon is recognized for its innovation in power semiconductors, embedded systems, and chip card & security products.
Application
The IRF6665TRPBF is a MOSFET used in various applications due to its efficient power handling and switching capabilities. Key application areas include:
1. Power Supply Units: Used in DC-DC converters and power management systems for efficient voltage regulation.
2. Motor Drives: Employed in controlling motors in industrial and automotive applications.
3. Renewable Energy Systems: Integral in solar inverters and wind turbine converters for efficient energy conversion.
4. Consumer Electronics: Utilized in devices requiring efficient power management, such as gaming consoles and laptops.
5. Industrial Equipment: Used in automation and control systems that require reliable power switching.
Its low on-resistance and fast switching make it ideal for high-efficiency, high-frequency applications.
1. Power Supply Units: Used in DC-DC converters and power management systems for efficient voltage regulation.
2. Motor Drives: Employed in controlling motors in industrial and automotive applications.
3. Renewable Energy Systems: Integral in solar inverters and wind turbine converters for efficient energy conversion.
4. Consumer Electronics: Utilized in devices requiring efficient power management, such as gaming consoles and laptops.
5. Industrial Equipment: Used in automation and control systems that require reliable power switching.
Its low on-resistance and fast switching make it ideal for high-efficiency, high-frequency applications.
Package
The IRF6665TRPBF is typically available in a DirectFET package, which is a type of surface-mount package designed for efficient heat dissipation and reduced package size.
