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IRF6811STRPBF
+BOMMOSFET N CH 25V 19A DIRECTFET
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF6811STRPBF
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データシート IRF6811STRPBF DataSheet
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在庫状況4811
365 日間品質保証
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1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 74A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 1590 pF @ 13 V |
| Power Dissipation (Max) | 2.1W (Ta), 32W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ SQ |
| Package / Case | DirectFET™ Isometric SQ |
概要
Description
The IRF6811STRPBF is a N-channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 60A, making it suitable for power management in various electronic devices. The device is known for its low on-resistance (R_DS(on)) of approximately 0.034 ohms, which minimizes power loss and heat generation during operation.
The MOSFET is packaged in a TO-220 format, allowing for efficient heat dissipation and easy mounting on PCBs. It is commonly used in applications like power supplies, motor drives, and DC-DC converters. The IRF6811STRPBF is characterized by fast switching speeds and robust thermal performance, making it ideal for applications requiring high efficiency and reliability.
Additionally, the “PBF” suffix indicates that it is lead-free, complying with RoHS standards, which is important for environmentally friendly designs. Overall, the IRF6811STRPBF is a versatile component for various power electronics applications.
The MOSFET is packaged in a TO-220 format, allowing for efficient heat dissipation and easy mounting on PCBs. It is commonly used in applications like power supplies, motor drives, and DC-DC converters. The IRF6811STRPBF is characterized by fast switching speeds and robust thermal performance, making it ideal for applications requiring high efficiency and reliability.
Additionally, the “PBF” suffix indicates that it is lead-free, complying with RoHS standards, which is important for environmentally friendly designs. Overall, the IRF6811STRPBF is a versatile component for various power electronics applications.
Equivalent
The IRF6811STRPBF is a N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and AOD404. Ensure to check specifications like voltage rating, current handling, and package type for compatibility in your application.
Features
The IRF6811STRPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The continuous drain current (I_D) is rated at 45A, which makes it suitable for high power applications.
3. R_DS(on): The on-resistance is low, typically around 0.014 ohms, enhancing efficiency by reducing power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 2V to 4V, allowing for easy drive with low gate voltages.
5. Package: It comes in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching: The device supports fast switching speeds, ideal for PWM applications and motor control.
7. Protection Features: It is designed with internal protection against overvoltage and thermal overload.
These characteristics make the IRF6811STRPBF a popular choice for power management and conversion applications in consumer electronics and industrial devices.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The continuous drain current (I_D) is rated at 45A, which makes it suitable for high power applications.
3. R_DS(on): The on-resistance is low, typically around 0.014 ohms, enhancing efficiency by reducing power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 2V to 4V, allowing for easy drive with low gate voltages.
5. Package: It comes in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching: The device supports fast switching speeds, ideal for PWM applications and motor control.
7. Protection Features: It is designed with internal protection against overvoltage and thermal overload.
These characteristics make the IRF6811STRPBF a popular choice for power management and conversion applications in consumer electronics and industrial devices.
Pinout
The IRF6811STRPBF is a dual N-channel MOSFET with a total of 8 pins. It is designed for high-speed switching applications and is commonly used in power management circuits.
Pin Configuration:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Outputs from the first N-channel MOSFET.
3. Source 1 (S1) - Connects to the source of the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Outputs from the second N-channel MOSFET.
6. Source 2 (S2) - Connects to the source of the second N-channel MOSFET.
7. Common Source (CS) - Can be tied together for both MOSFETs.
8. Common Drain (CD) - Used for common signal paths.
This configuration allows for efficient control and operation in various electronic applications.
Pin Configuration:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Outputs from the first N-channel MOSFET.
3. Source 1 (S1) - Connects to the source of the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Outputs from the second N-channel MOSFET.
6. Source 2 (S2) - Connects to the source of the second N-channel MOSFET.
7. Common Source (CS) - Can be tied together for both MOSFETs.
8. Common Drain (CD) - Used for common signal paths.
This configuration allows for efficient control and operation in various electronic applications.
Manufacturer
The manufacturer of the IRF6811STRPBF is Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Munich, Germany. It specializes in the design and production of a wide range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. Infineon focuses on power management, microcontrollers, sensors, and other semiconductor technologies that enable efficient energy management and connectivity in electronic devices. The company is recognized for its innovation in power semiconductors and is a key player in the automotive and industrial markets, driving advancements in energy efficiency and sustainability.
Application
The IRF6811STRPBF is an N-channel MOSFET primarily used in power management applications. Its application areas include:
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Motor Control: In driving electric motors for industrial and consumer applications.
3. Switching Power Supplies: For high-efficiency power conversion.
4. HEV/EV Applications: In hybrid and electric vehicle systems for power management.
5. LED Drivers: For efficient control of LED lighting systems.
6. Solar Inverters: In renewable energy systems for converting DC to AC.
The device is favored for its low on-resistance and fast switching capabilities.
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Motor Control: In driving electric motors for industrial and consumer applications.
3. Switching Power Supplies: For high-efficiency power conversion.
4. HEV/EV Applications: In hybrid and electric vehicle systems for power management.
5. LED Drivers: For efficient control of LED lighting systems.
6. Solar Inverters: In renewable energy systems for converting DC to AC.
The device is favored for its low on-resistance and fast switching capabilities.
Package
The IRF6811STRPBF is packaged in a D2PAK (TO-263) format, which is a surface-mount package designed for power applications. This package type offers efficient thermal performance and is suitable for high current and voltage applications.
