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IRF7103TR
+BOMMOSFET 2N-CH 50V 3A 8SOP
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メーカーUMW社
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メーカー品番 #IRF7103TR
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データシート IRF7103TR DataSheet
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在庫状況16453
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| PartStatus | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel |
| DraintoSourceVoltage(Vdss) | 50V |
| Current-ContinuousDrain(Id)@25°C | 3A (Ta) |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| InputCapacitance(Ciss)(Max)@Vds | 290pF @ 25V |
| Power-Max | 2W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| SupplierDevicePackage | 8-SOP |
| RdsOn(Max)@Id,Vgs | 30mOhm @ 3A, 10V |
| GateCharge(Qg)(Max)@Vgs | 30nC @ 10V |
概要
Description
Key features of the IRF7103TR include:
1. Dual MOSFET Design: Contains two MOSFETs within a single package, which saves space on the circuit board and simplifies design requirements.
2. Low On-Resistance: Offers minimal power loss and improved efficiency, making it ideal for applications requiring high power efficiency.
3. High-Speed Switching: Suitable for applications that require rapid switching speeds, such as DC-DC converters and power supplies.
4. Compact Package: Typically available in a small form factor, aiding in compact device design.
The IRF7103TR is favored in applications where space is a concern and efficient power consumption is crucial, such as in portable electronics, power management systems, and automotive applications.
Equivalent
Features
1. Dual N-Channel Configuration: It contains two N-channel MOSFETs in a single package, optimizing space in compact designs.
2. Voltage Rating: The device typically supports a drain-to-source voltage (V_DS) of around 30V, suitable for moderate power applications.
3. Current Handling: It offers a drain current (I_D) capacity in the range of a few amperes per channel, facilitating efficient power management.
4. Low On-Resistance: The MOSFETs exhibit low on-state resistance, enhancing efficiency by reducing power loss during operation.
5. Fast Switching Speed: It provides rapid switching capabilities, making it ideal for high-frequency applications.
6. SOIC-8 Package: Available in an SOIC-8 surface-mount package, it supports automated assembly processes.
7. Thermal Performance: Offers decent thermal characteristics with an appropriate heat dissipation mechanism, ensuring reliable operation.
These features make the IRF7103TR suitable for use in power management, DC-DC converters, and other electronic circuits requiring efficient power handling and compact design.
Pinout
1. Pin 1 (Source 1): Source terminal for the first MOSFET.
2. Pin 2 (Gate 1): Gate terminal for the first MOSFET.
3. Pin 3 (Drain 2): Drain terminal for the second MOSFET.
4. Pin 4 (Source 2): Source terminal for the second MOSFET.
5. Pin 5 (Gate 2): Gate terminal for the second MOSFET.
6. Pin 6 (Drain 1): Drain terminal for the first MOSFET.
7. Pin 7 (Drain 1): Drain terminal for the first MOSFET (internally connected to Pin 6).
8. Pin 8 (Drain 2): Drain terminal for the second MOSFET (internally connected to Pin 3).
The IRF7103TR is designed for a variety of applications including battery protection, power management in portable devices, and load switching. Its dual MOSFET configuration allows for efficient use in circuits requiring two switches.