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IRF7455TRPBF
+BOMMOSFET N-CH 30V 15A 8SO
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF7455TRPBF
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データシート IRF7455TRPBF DataSheet
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パッケージ SOIC-8
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在庫状況5645
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 15A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.8V, 10V |
| Rds On(Max) @ Id Vgs | 7.5mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 56 nC @ 5 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 3480 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
概要
Description
The MOSFET is housed in a standard DPAK package, which is suitable for surface-mount technology (SMT), providing ease of integration into a variety of electronic circuits. The IRF7455TRPBF has a maximum gate threshold voltage (V_GS) that typically ranges from 2V to 4V, allowing it to be driven by standard logic level signals.
This component is well-regarded for its high-speed switching capabilities, which make it ideal for applications requiring rapid on/off cycles. Its robustness and reliability have made it popular in both consumer electronics and industrial applications. Additionally, the part is lead-free and RoHS compliant, ensuring environmental safety.
Equivalent
1. FDB7030BL from ON Semiconductor
2. STP55NF06 from STMicroelectronics
3. FDP7030L from ON Semiconductor
4. NTB60N06 from ON Semiconductor
These alternatives share similar specifications such as voltage rating and current capacity, but always confirm parameters and pin configurations before substituting.
Features
1. Voltage and Current Ratings: It is capable of handling a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 18A, making it suitable for medium to high power applications.
2. RDS(on) Resistance: The device has a low on-state resistance (RDS(on)) of around 7.5 mΩ, which ensures efficient power conduction with minimal losses.
3. Fast Switching Speeds: The MOSFET is designed for fast switching, which helps in reducing the switching losses in high-frequency applications.
4. Package Type: This component comes in a D-Pak (TO-252) surface-mount package, which supports compact and efficient layout designs.
5. Operational Temperature Range: It operates efficiently over a wide temperature range, ensuring reliability in various environmental conditions.
6. Lead-Free and RoHS Compliant: The IRF7455TRPBF is environmentally friendly, being lead-free and compliant with RoHS standards.
These features make it suitable for use in power management, DC-DC converters, and other applications requiring efficient power switching.
Pinout
- Pin Count: 3 pins
- Pin Functions:
1. Gate (G): This pin is used to control the MOSFET's switching state. By applying voltage to the gate, the MOSFET is turned on or off.
2. Drain (D): This pin is the main current-carrying terminal where the drain-source current flows when the MOSFET is turned on.
3. Source (S): This pin acts as the return path for the current that flows through the MOSFET from drain to source when it is in the on state.
The IRF7455TRPBF is commonly used in various power applications for efficient switching and amplification due to its low on-resistance and fast switching speed.
Manufacturer
Application
1. Switching Power Supplies: Utilized for efficient power conversion.
2. Motor Control: Used in motor drivers for controlling DC motors.
3. DC-DC Converters: Employed in step-up/step-down converters for voltage regulation.
4. Load Switches: Acts as a switch to control the power supply to a load.
5. Battery Management Systems: Helps in efficient battery charging and discharging.
6. Inverters: Used in converting DC to AC in solar inverters and other systems.
7. Telecommunications: Supports high-efficiency power management in telecom devices.
These applications leverage its low on-resistance and fast switching capabilities.