画像は参考用です
IRF9362TRPBF
+BOMMOSFET 2P-CH 30V 8A 8SO
-
メーカーインフィニオンテクノロジーズ
-
メーカー品番 #IRF9362TRPBF
-
在庫状況8274
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | HEXFET® |
| PartStatus | Last Time Buy |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 8A |
| RdsOn(Max)@Id,Vgs | 21mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 2.4V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 39nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 1300pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| SupplierDevicePackage | 8-SO |
| BaseProductNumber | IRF9362 |
概要
Description
Key specifications include a maximum drain-source voltage (VDS) of 60V, a continuous drain current (ID) of up to 62A, and a threshold voltage (VGS(th)) typically ranging from 2V to 4V. The device is housed in a TO-220 package, facilitating efficient heat dissipation and easy mounting on PCBs.
The IRF9362TRPBF is notable for its fast switching characteristics, enabling it to operate efficiently at higher frequencies. It is also RoHS compliant, ensuring it meets environmental standards. Users typically choose this MOSFET for its robustness and reliability in demanding applications, making it a popular choice among engineers and designers in the power electronics field.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, suitable for various power applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 62A, making it ideal for high-current applications.
3. R_DS(on): The device offers a low on-resistance (R_DS(on)) of approximately 9.5 mΩ at V_GS of 10V, ensuring minimal power loss and improved efficiency.
4. Gate Threshold Voltage (V_GS(th)): It has a gate threshold voltage of 1-2.5V, allowing it to be driven effectively with lower gate voltages.
5. Thermal Performance: It features a low thermal resistance, which enhances heat dissipation and reliability.
6. Package: The IRF9362TRPBF comes in a TO-220 package, facilitating easy heat sinking.
These features make the IRF9362TRPBF suitable for applications such as motor drives, power supplies, and DC-DC converters.
Pinout
1. Gate (G): Controls the MOSFET's operation.
2. Drain (D): The terminal through which the current flows out.
3. Source (S): The terminal through which the current enters.
The other pins are typically associated with the device's packaging and thermal management.
Key specifications include a maximum continuous drain current of 62A, a drain-source voltage (V_DS) rating of 60V, and a low R_DS(on) for efficient conduction. This makes it suitable for power management, motor control, and other applications requiring rapid switching and low power loss. The IRF9362TRPBF is housed in a TO-220 package, facilitating heat dissipation.
Always refer to the manufacturer's datasheet for detailed electrical characteristics and thermal data.
Manufacturer
Infineon is headquartered in Neubiberg, Germany, and has a strong presence in the semiconductor market, focusing on innovation and sustainability. They are committed to advancing technologies that improve energy efficiency and enable smarter, more connected systems. The IRF9362TRPBF is a N-channel MOSFET designed for high-performance applications, particularly in power management and conversion circuits.
Infineon's expertise encompasses various sectors, making them a key player in the electronics industry, dedicated to driving technological advancements and supporting the transition to a more energy-efficient future.