仕様
| 属性 | 値 |
| Supplier | Infineon Technologies |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 10A, 12A |
| RdsOn(Max)@IdVgs | 13.4mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 2.55V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 11nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 900pF @ 10V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
