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IRF9Z34NPBF
+BOMMOSFET P-CH 55V 19A TO220AB
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRF9Z34NPBF
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データシート IRF9Z34NPBF DataSheet
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パッケージ TO-220AB
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在庫状況3631
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 19A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 100mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 620 pF @ 25 V |
| Power Dissipation (Max) | 68W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
概要
Description
The IRF9Z34NPBF is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplifying signals. Manufactured by Infineon Technologies, it is designed for use in high-speed switching applications. This MOSFET features a low on-state resistance, which enhances its efficiency by minimizing power loss during operation. It can handle a continuous drain current of up to -19A and a drain-source voltage of -55V, making it suitable for various applications like power management and motor control.
The device also exhibits fast switching speeds, low gate charge, and robust thermal performance, contributing to its effectiveness in demanding environments. The "PBF" suffix indicates that it is lead-free and RoHS compliant, aligning with environmental standards. These characteristics make the IRF9Z34NPBF a versatile choice for designers looking to optimize power efficiency and performance in their circuits. Its TO-220 package provides ease of mounting and heat dissipation, further enhancing its applicability in both consumer electronics and industrial applications.
The device also exhibits fast switching speeds, low gate charge, and robust thermal performance, contributing to its effectiveness in demanding environments. The "PBF" suffix indicates that it is lead-free and RoHS compliant, aligning with environmental standards. These characteristics make the IRF9Z34NPBF a versatile choice for designers looking to optimize power efficiency and performance in their circuits. Its TO-220 package provides ease of mounting and heat dissipation, further enhancing its applicability in both consumer electronics and industrial applications.
Equivalent
The IRF9Z34NPBF is a P-channel MOSFET. Equivalent products that can be considered include: FQP9P25 from ON Semiconductor, FQP27P06 from ON Semiconductor, and STP27P06 from STMicroelectronics. Ensure to compare the electrical characteristics, such as voltage, current ratings, and Rds(on), to confirm compatibility for your specific application. Always consult the datasheets to verify specifications and thermal performance.
Features
The IRF9Z34NPBF is a P-channel MOSFET designed by Infineon Technologies. Key features include:
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) of -55V and a continuous drain current (I_D) of -19A.
2. R_DS(on): The on-resistance is approximately 0.05 ohms, which allows for efficient current flow with minimal energy loss.
3. Package Type: It is available in a TO-220 package, which is common for power transistors due to its ability to dissipate heat efficiently.
4. Gate Threshold Voltage: The gate threshold voltage is typically between -2V and -4V, ensuring the MOSFET fully turns on for efficient switching.
5. Applications: Suitable for applications such as DC-DC converters, power management in battery-operated devices, and load switching.
6. Temperature Range: It operates within a temperature range of -55°C to +175°C, making it suitable for various environments.
7. Low Gate Charge: Offers low gate charge, enhancing switching performance and efficiency in high-frequency applications.
These features make the IRF9Z34NPBF a reliable choice for various electronic applications requiring efficient power management and switching capabilities.
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) of -55V and a continuous drain current (I_D) of -19A.
2. R_DS(on): The on-resistance is approximately 0.05 ohms, which allows for efficient current flow with minimal energy loss.
3. Package Type: It is available in a TO-220 package, which is common for power transistors due to its ability to dissipate heat efficiently.
4. Gate Threshold Voltage: The gate threshold voltage is typically between -2V and -4V, ensuring the MOSFET fully turns on for efficient switching.
5. Applications: Suitable for applications such as DC-DC converters, power management in battery-operated devices, and load switching.
6. Temperature Range: It operates within a temperature range of -55°C to +175°C, making it suitable for various environments.
7. Low Gate Charge: Offers low gate charge, enhancing switching performance and efficiency in high-frequency applications.
These features make the IRF9Z34NPBF a reliable choice for various electronic applications requiring efficient power management and switching capabilities.
Pinout
The IRF9Z34NPBF is a P-channel MOSFET. It typically comes in a TO-220 package, which has three pins. The functions of these pins are as follows:
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage to the gate allows current to flow between the source and the drain.
2. Drain (D): Current flows out of the drain when the MOSFET is turned on. It is the main current output terminal.
3. Source (S): Current flows into the source terminal. It is connected to the negative side of the voltage supply for a P-channel MOSFET.
The IRF9Z34NPBF is often used in applications such as power switching, load switching, and inverting high-side drivers due to its ability to handle substantial current and voltage in P-channel configurations.
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage to the gate allows current to flow between the source and the drain.
2. Drain (D): Current flows out of the drain when the MOSFET is turned on. It is the main current output terminal.
3. Source (S): Current flows into the source terminal. It is connected to the negative side of the voltage supply for a P-channel MOSFET.
The IRF9Z34NPBF is often used in applications such as power switching, load switching, and inverting high-side drivers due to its ability to handle substantial current and voltage in P-channel configurations.
Manufacturer
The IRF9Z34NPBF is manufactured by Infineon Technologies. Infineon is a semiconductor manufacturing company that specializes in designing and producing a wide range of semiconductor solutions. Their product lines include microcontrollers, sensors, power semiconductors, and embedded security solutions, which are used in various applications across different industries such as automotive, industrial, and consumer electronics. The company is recognized for its innovative technologies and solutions that focus on energy efficiency, mobility, and security. Infineon operates globally, providing products and services that cater to the needs of modern technology-driven markets.
Application
The IRF9Z34NPBF is a P-channel MOSFET commonly used in various applications due to its high-efficiency and low on-resistance. Key application areas include:
1. Power Management: Used in DC-DC converters, switching regulators, and load switches.
2. Motor Control: Suitable for driving small motors in consumer electronics and industrial devices.
3. Battery Protection: Provides overcurrent and short-circuit protection in battery-powered devices.
4. LED Drivers: Utilized in LED lighting systems for efficient power delivery and control.
5. Inverters and SMPS: Employed in inverters and switched-mode power supplies for efficient power conversion.
Its robustness and efficiency make it versatile for use in both consumer and industrial electronics.
1. Power Management: Used in DC-DC converters, switching regulators, and load switches.
2. Motor Control: Suitable for driving small motors in consumer electronics and industrial devices.
3. Battery Protection: Provides overcurrent and short-circuit protection in battery-powered devices.
4. LED Drivers: Utilized in LED lighting systems for efficient power delivery and control.
5. Inverters and SMPS: Employed in inverters and switched-mode power supplies for efficient power conversion.
Its robustness and efficiency make it versatile for use in both consumer and industrial electronics.
Package
The IRF9Z34NPBF is a P-channel MOSFET transistor packaged in a TO-220 form factor. This package is commonly used for power semiconductors and allows for easy mounting and heat dissipation via a metal tab.
