IRFB3206

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IRFB3206

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  • メーカー英飛凌/IR

  • メーカー品番 #IRFB3206

  • データシート IRFB3206 DataSheet

  • 在庫状況2125

365 日間品質保証

7*24 日間の品質保証

90-時間単位のサービス保証

1日間のアフターサービス保証

仕様

属性
Brand Infineon / IR
ProductType MOSFETs
Subcategory Transistors
Technology Si
MountingStyle Through Hole
Package/Case TO-220-3
TransistorPolarity N-Channel
NumberofChannels 1 Channel
Vds-Drain-SourceBreakdownVoltage 60 V
Id-ContinuousDrainCurrent 210 A
RdsOn-Drain-SourceResistance 3 mOhms
Vgs-Gate-SourceVoltage - 20 V, + 20 V
MinimumOperatingTemperature - 55 C
MaximumOperatingTemperature + 175 C
Pd-PowerDissipation 300 W
ChannelMode Enhancement
Configuration Single
FallTime 83 ns
Height 15.65 mm
Length 10 mm
RiseTime 82 ns
TransistorType 1 N-Channel
TypicalTurn-OffDelayTime 55 ns
TypicalTurn-OnDelayTime 19 ns
Width 4.4 mm
UnitWeight 0.068784 oz

概要

Description

IRFB3206 is typically an introductory course focused on International Relations, particularly examining key theories, concepts, and issues that shape global interactions. The course may cover topics such as state sovereignty, globalization, international organizations, security studies, and the role of non-state actors.
Students are encouraged to analyze historical and contemporary events through various theoretical lenses including realism, liberalism, and constructivism. The course often emphasizes critical thinking and analytical skills, enabling students to understand the complexities of international politics and diplomacy.
Moreover, IRFB3206 may involve case studies, encouraging discussions on current global challenges like climate change, conflict resolution, and human rights. Overall, the course aims to equip students with a foundational understanding of international relations, preparing them for advanced studies or careers in related fields.

Equivalent

Equivalent products to the IRFB3206 MOSFET include the STP320N06, FPD320N06, and AOD3206. These alternatives share similar specifications, such as voltage rating, current handling capability, and RDS(on) values. Always verify datasheets for exact specifications and ensure compatibility with your application.

Features

The IRFB3206 is an N-channel power MOSFET known for its high efficiency and performance in various applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (VDS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: The continuous drain current (ID) is around 120A, allowing it to handle significant loads.
3. Low RDS(on): Its low on-resistance (RDS(on)) value, typically around 5.5 mΩ, reduces power losses and improves efficiency.
4. Fast Switching: Designed for quick switching operations, making it ideal for high-frequency applications.
5. Thermal Performance: It has a high junction-to-ambient thermal resistance, enhancing its ability to dissipate heat.
6. Package Type: Available in a TO-220 package, which allows for easy mounting and good thermal management.
These features make the IRFB3206 suitable for use in power supplies, motor controllers, and other high-efficiency electronic circuits.

Pinout

The IRFB3206 is an N-channel MOSFET commonly used in power applications. It has a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output pin where the load is connected and through which the current flows when the device is on.
3. Source (S) - Connected to ground or the negative side of the power supply, completing the circuit with the drain.
The IRFB3206 is known for its low on-resistance (R_DS(on)) and high current-carrying capability, making it suitable for applications such as power management, DC-DC converters, and motor drives.

Manufacturer

The IRFB3206 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon is known for its expertise in power semiconductors, automotive electronics, and various other electronic components. The company was formed in 1999 as a spin-off from Siemens AG and is headquartered in Neubiberg, Germany.
Infineon focuses on providing innovative solutions for energy efficiency, mobility, and security, catering to various industries, including automotive, industrial, and consumer electronics. Their product portfolio includes MOSFETs, IGBTs, microcontrollers, and sensors, among others. The IRFB3206 is a N-channel MOSFET specifically designed for high-efficiency power management applications, making it suitable for use in areas like power supplies, motor drives, and renewable energy systems.
Infineon has a strong commitment to research and development, continuously advancing semiconductor technology to meet the growing demands for efficiency and performance in modern electronics.

Application

The IRFB3206 is an N-channel MOSFET widely used in various applications due to its high efficiency and power handling capabilities. Key application areas include:
1. Power Supply Circuits: Used in switch-mode power supplies (SMPS) for voltage regulation.
2. Motor Drives: Employed in DC brushless motors and electric vehicle drives.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
4. DC-DC Converters: Integral in step-down (buck) and step-up (boost) converters for efficient power conversion.
5. Class D Amplifiers: Used in audio amplification for efficient signal processing.
Its low on-resistance and fast switching speeds enhance performance in these applications.

Package

The IRFB3206 is typically available in a TO-220 package type. This package is designed for easy mounting and effective heat dissipation, making it suitable for high-power applications in electronic circuits.

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