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IRFB3307PBF
+BOMMOSFET N-CH 75V 130A TO220AB
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRFB3307PBF
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データシート IRFB3307PBF DataSheet
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パッケージ TO-220-3
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在庫状況7797
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain(Id) @ 25°C | 130A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 6.3mOhm @ 75A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 150µA |
| Gate Charge(Qg)(Max) @ Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5150 pF @ 50 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
概要
Description
The IRFB3307PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high efficiency in switching applications. Manufactured by Vishay, this component is part of their HEXFET® series known for reliability and performance. Key features include a maximum drain-source voltage (V_DS) of 75V and a continuous drain current (I_D) of up to 240A, making it suitable for high-power applications.
The transistor is built with advanced process technology to minimize on-resistance (R_DS(on)), thus reducing power loss and heat generation. This makes it ideal for use in environments where thermal management is crucial, such as in power supplies, motor drives, and DC-DC converters.
The IRFB3307PBF comes in a TO-220 package that offers efficient thermal characteristics and ease of mounting. It is RoHS compliant, ensuring it meets environmental standards. Overall, the IRFB3307PBF is a versatile and efficient choice for designers looking to improve the performance and reliability of their electronic systems.
The transistor is built with advanced process technology to minimize on-resistance (R_DS(on)), thus reducing power loss and heat generation. This makes it ideal for use in environments where thermal management is crucial, such as in power supplies, motor drives, and DC-DC converters.
The IRFB3307PBF comes in a TO-220 package that offers efficient thermal characteristics and ease of mounting. It is RoHS compliant, ensuring it meets environmental standards. Overall, the IRFB3307PBF is a versatile and efficient choice for designers looking to improve the performance and reliability of their electronic systems.
Equivalent
The IRFB3307PBF is a MOSFET transistor used for switching applications. Equivalent products include:
1. STP180N55F3 from STMicroelectronics.
2. FDP039AN08A0 from ON Semiconductor.
3. IPB180N06S4-04 from Infineon Technologies.
4. AOT480 from Alpha & Omega Semiconductor.
These equivalents should have similar electrical characteristics, including voltage and current ratings, but always verify the datasheets to ensure compatibility.
1. STP180N55F3 from STMicroelectronics.
2. FDP039AN08A0 from ON Semiconductor.
3. IPB180N06S4-04 from Infineon Technologies.
4. AOT480 from Alpha & Omega Semiconductor.
These equivalents should have similar electrical characteristics, including voltage and current ratings, but always verify the datasheets to ensure compatibility.
Features
The IRFB3307PBF is an N-channel power MOSFET known for its efficiency and high current handling capabilities. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_ds) of 75V and can handle a continuous drain current (I_d) of up to 210A at 25°C.
2. R_DS(on): The on-resistance is low, typically around 4.5 mΩ, which minimizes power losses and improves efficiency.
3. Package: It comes in a TO-220 package, which is widely used for its balance between size and power dissipation.
4. Technology: Built on advanced HEXFET® technology, providing ruggedness and reliability.
5. Applications: Suitable for high-efficiency applications like DC-DC converters, motor drives, and switching regulators.
6. Thermal Performance: The device features a maximum junction temperature (T_j) of 175°C, allowing for operation in demanding thermal environments.
These features make the IRFB3307PBF an ideal choice for high-performance power management applications.
1. Voltage and Current Ratings: It has a drain-source voltage (V_ds) of 75V and can handle a continuous drain current (I_d) of up to 210A at 25°C.
2. R_DS(on): The on-resistance is low, typically around 4.5 mΩ, which minimizes power losses and improves efficiency.
3. Package: It comes in a TO-220 package, which is widely used for its balance between size and power dissipation.
4. Technology: Built on advanced HEXFET® technology, providing ruggedness and reliability.
5. Applications: Suitable for high-efficiency applications like DC-DC converters, motor drives, and switching regulators.
6. Thermal Performance: The device features a maximum junction temperature (T_j) of 175°C, allowing for operation in demanding thermal environments.
These features make the IRFB3307PBF an ideal choice for high-performance power management applications.
Pinout
The IRFB3307PBF is an N-channel MOSFET produced by Infineon Technologies (previously International Rectifier). It is commonly used in power management applications due to its high current handling and low on-state resistance.
Pin Count:
The IRFB3307PBF comes in a standard TO-220 package, which has 3 pins.
Pin Functions:
1. Gate (G): This pin is used to control the on/off state of the MOSFET. Applying a suitable voltage to the gate controls the flow of current between the drain and source.
2. Drain (D): This pin is the terminal through which the load current enters. It is connected to the high voltage side of the circuit.
3. Source (S): This pin is the terminal through which the load current exits. It is typically connected to the ground or the low voltage side of the circuit.
The IRFB3307PBF is optimized for applications requiring high efficiency and fast switching, making it suitable for use in DC-DC converters, synchronous rectification, and motor drives.
Pin Count:
The IRFB3307PBF comes in a standard TO-220 package, which has 3 pins.
Pin Functions:
1. Gate (G): This pin is used to control the on/off state of the MOSFET. Applying a suitable voltage to the gate controls the flow of current between the drain and source.
2. Drain (D): This pin is the terminal through which the load current enters. It is connected to the high voltage side of the circuit.
3. Source (S): This pin is the terminal through which the load current exits. It is typically connected to the ground or the low voltage side of the circuit.
The IRFB3307PBF is optimized for applications requiring high efficiency and fast switching, making it suitable for use in DC-DC converters, synchronous rectification, and motor drives.
Manufacturer
The IRFB3307PBF is manufactured by Infineon Technologies, a leading semiconductor company. Infineon, headquartered in Neubiberg, Germany, specializes in designing, developing, and manufacturing a wide range of semiconductor products. These products are widely used in automotive, industrial, and consumer electronics applications, among others. The company is known for its innovation in power semiconductors, microcontrollers, sensors, and security products. Infineon's acquisition of International Rectifier in 2015 expanded its portfolio, making it a key player in the power electronics market.
Application
The IRFB3307PBF is a power MOSFET designed for high-efficiency power conversion. It is commonly used in applications like switch-mode power supplies (SMPS), motor drives, uninterruptible power supplies (UPS), and DC-DC converters. Its characteristics make it suitable for high-current, high-speed switching applications, including industrial motor control, renewable energy systems, and automotive power systems. The device’s low RDS(on) and fast switching capabilities help improve overall system efficiency and thermal performance.
Package
The IRFB3307PBF is a MOSFET that comes in a TO-220 package type. This package is commonly used for power semiconductors, providing a convenient size for mounting and effective heat dissipation.
