IRFB38N20DPBF

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IRFB38N20DPBF

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IRFB38N20 - 12V-300V N-CHANNEL P

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  • データシート IRFB38N20DPBF DataSheet

  • パッケージ TO-220

  • 在庫状況6086

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仕様

属性
Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 43A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 54mOhm @ 26A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 91 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2900 pF @ 25 V
PowerDissipation(Max) 3.8W (Ta), 300W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

概要

Description

The IRFB38N20DPBF is a N-channel MOSFET from Infineon Technologies, designed for high-power applications. Key features include:
- Voltage Rating: 200V
- Current Rating: 38A (continuous)
- Low On-Resistance (RDS(on)): 0.085Ω (max at VGS=10V)
- Fast Switching: Suitable for PWM and motor control
- Package: TO-220AB (through-hole, easy to mount)
It is commonly used in switching power supplies, motor drives, and DC-DC converters due to its efficiency and robustness. The device includes an integrated fast-recovery diode for improved performance in inductive load applications.
For optimal operation, ensure proper gate drive voltage (10V recommended) and heat dissipation via a heatsink in high-current scenarios.

Equivalent

Equivalent products to the IRFB38N20DPBF (200V, 38A, N-channel MOSFET) include:
- IRFB38N20D (same series, slight variation)
- IRFB40N20DPBF (200V, 40A)
- IRFB42N20DPBF (200V, 42A)
- STP38N20M2 (STMicroelectronics, 200V, 38A)
- FDP38N20 (Fairchild/ON Semi, 200V, 38A)
Check datasheets for exact compatibility in your application.

Features

The IRFB38N20DPBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 200V
- Current Rating: 38A (continuous)
- RDS(on): 0.085Ω (max at VGS=10V)
- Fast Switching: Low gate charge (58nC) and fast switching speed
- Power Dissipation: 230W (with proper heat sinking)
- Package: TO-220AB (through-hole)
- Avalanche Energy Rated: Robust against voltage spikes
- Low Gate Drive: Fully enhanced at 10V (VGS)
Ideal for power switching, motor control, and inverters due to its high efficiency and rugged design.

Pinout

The IRFB38N20DPBF is a N-channel MOSFET in a TO-220AB package with 3 pins:
1. Gate (G) – Controls the switching operation (input signal).
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Ground/reference terminal (low-voltage side).
Key Specifications:
- Voltage Rating: 200V
- Current Rating: 38A (continuous)
- RDS(on): 0.085Ω (max at VGS=10V)
- Power Dissipation: 200W
Function: Used for high-power switching in applications like motor drives, inverters, and power supplies.

Application

The IRFB38N20DPBF, a 200V N-channel MOSFET, is commonly used in:
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge inverters, brushed/brushless motor drives.
3. Automotive Systems – Electronic control units (ECUs), LED drivers.
4. Industrial Applications – High-efficiency inverters, welding equipment.
5. Renewable Energy – Solar charge controllers, wind power systems.
Its low on-resistance (RDS(on)) and high current handling (38A) make it suitable for high-power switching applications.

Package

The IRFB38N20DPBF is a power MOSFET housed in a TO-220AB package. This package type is through-hole mounted, offers good thermal performance, and is commonly used for high-power applications. The TO-220AB features a metal tab for heat dissipation and is suitable for soldering or mounting with a heatsink.

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