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IRFB4310PBF
+BOMIRFB4310 - 12V-300V N-CHANNEL PO
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メーカーインターナショナル・レクティファイアー
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メーカー品番 #IRFB4310PBF
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データシート IRFB4310PBF DataSheet
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パッケージ TO-220-3
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在庫状況4639
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 130A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 7mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 250 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 7670 pF @ 50 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概要
Description
The IRFB4310PBF is a power MOSFET from Infineon Technologies, designed for high-efficiency applications. It features an N-channel enhancement mode, which provides fast switching and low on-state resistance. With a maximum drain-source voltage of 100V and a continuous drain current of up to 130A, this MOSFET is suitable for demanding environments.
Key specifications include a low R_DS(on) of 4.5 mΩ (typical) at 10V gate voltage, which reduces power loss and improves efficiency in power conversion applications. The device is housed in a TO-220 package, which offers good thermal performance and ease of mounting on heat sinks.
The IRFB4310PBF is often used in applications like motor drives, DC-DC converters, and power supplies, where high power density and reliability are essential. Additionally, it complies with lead-free and RoHS standards, making it appropriate for environmentally sensitive designs. Its robust construction enables it to withstand high energy pulses in the avalanche and commutation modes, making it a reliable choice for various industrial and commercial applications.
Key specifications include a low R_DS(on) of 4.5 mΩ (typical) at 10V gate voltage, which reduces power loss and improves efficiency in power conversion applications. The device is housed in a TO-220 package, which offers good thermal performance and ease of mounting on heat sinks.
The IRFB4310PBF is often used in applications like motor drives, DC-DC converters, and power supplies, where high power density and reliability are essential. Additionally, it complies with lead-free and RoHS standards, making it appropriate for environmentally sensitive designs. Its robust construction enables it to withstand high energy pulses in the avalanche and commutation modes, making it a reliable choice for various industrial and commercial applications.
Equivalent
The IRFB4310PBF is a N-channel MOSFET commonly used in power applications. Equivalent products would include other MOSFETs with similar voltage, current, and Rds(on) specifications. Some equivalents are:
1. STP55NF06 from STMicroelectronics
2. FQP50N06 from ON Semiconductor
3. FDP8870 from Fairchild Semiconductor (now part of ON Semiconductor)
It's important to check the datasheets for exact matching specifications to confirm compatibility in specific applications.
1. STP55NF06 from STMicroelectronics
2. FQP50N06 from ON Semiconductor
3. FDP8870 from Fairchild Semiconductor (now part of ON Semiconductor)
It's important to check the datasheets for exact matching specifications to confirm compatibility in specific applications.
Features
The IRFB4310PBF is a power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a drain-to-source voltage (V_ds) rating of 100V.
2. Current Capacity: This MOSFET can handle a continuous drain current (I_d) of up to 130A at 25°C.
3. R_ds(on): The device offers a low on-resistance of approximately 4.5 mΩ, minimizing power loss.
4. Package: It comes in a TO-220 package, suitable for through-hole mounting.
5. Thermal Performance: It provides efficient heat dissipation, aided by its package and low on-resistance.
6. Safe Operating Area (SOA): This device is robust with a good SOA, making it reliable for various demanding applications.
7. Applications: Ideal for use in power management, motor drives, and DC-DC converters.
Overall, the IRFB4310PBF is designed to deliver high performance with low losses, making it suitable for power-intensive applications.
1. Voltage Rating: It has a drain-to-source voltage (V_ds) rating of 100V.
2. Current Capacity: This MOSFET can handle a continuous drain current (I_d) of up to 130A at 25°C.
3. R_ds(on): The device offers a low on-resistance of approximately 4.5 mΩ, minimizing power loss.
4. Package: It comes in a TO-220 package, suitable for through-hole mounting.
5. Thermal Performance: It provides efficient heat dissipation, aided by its package and low on-resistance.
6. Safe Operating Area (SOA): This device is robust with a good SOA, making it reliable for various demanding applications.
7. Applications: Ideal for use in power management, motor drives, and DC-DC converters.
Overall, the IRFB4310PBF is designed to deliver high performance with low losses, making it suitable for power-intensive applications.
Pinout
The IRFB4310PBF is a N-channel MOSFET designed for various applications such as high-speed switching and power management. It is manufactured by Infineon Technologies (formerly International Rectifier). This MOSFET comes in a standard TO-220 package, which typically features 3 pins.
1. Gate (G): Used to control the flow of current between the drain and source. Applying voltage to the gate allows current flow.
2. Drain (D): The terminal through which the current flows out of the MOSFET; it connects to the load in a circuit.
3. Source (S): The terminal through which the current enters the MOSFET; connects to the ground or return path in a circuit.
The IRFB4310PBF is known for its low on-state resistance and can handle high current loads, making it suitable for power-intensive applications.
1. Gate (G): Used to control the flow of current between the drain and source. Applying voltage to the gate allows current flow.
2. Drain (D): The terminal through which the current flows out of the MOSFET; it connects to the load in a circuit.
3. Source (S): The terminal through which the current enters the MOSFET; connects to the ground or return path in a circuit.
The IRFB4310PBF is known for its low on-state resistance and can handle high current loads, making it suitable for power-intensive applications.
Manufacturer
The IRFB4310PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components. The company is known for producing semiconductors that are used in automotive, industrial, consumer electronics, and security applications, among others. Infineon Technologies is a leading player in the global semiconductor industry, focusing on innovation and providing solutions for energy efficiency, mobility, and security.
Application
The IRFB4310PBF is a power MOSFET commonly used in various applications due to its high efficiency and low on-resistance. Key application areas include:
1. Power Supply Units: Used in switching power supplies for improved efficiency.
2. Motor Drives: Suitable for use in motor control circuits for industrial and automotive applications.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
4. Battery Management Systems: Plays a role in battery protection and charging circuits.
5. DC-DC Converters: Employed in the conversion of voltage levels in electronic devices.
6. Lighting: Used in LED drivers and electronic ballast for energy efficiency.
These applications benefit from its robust performance and thermal efficiency.
1. Power Supply Units: Used in switching power supplies for improved efficiency.
2. Motor Drives: Suitable for use in motor control circuits for industrial and automotive applications.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
4. Battery Management Systems: Plays a role in battery protection and charging circuits.
5. DC-DC Converters: Employed in the conversion of voltage levels in electronic devices.
6. Lighting: Used in LED drivers and electronic ballast for energy efficiency.
These applications benefit from its robust performance and thermal efficiency.
Package
The IRFB4310PBF is a MOSFET in a TO-220 package. This package type is commonly used for power semiconductors and provides efficient thermal management with its metal tab, which can be attached to a heat sink for improved heat dissipation.
