IRFB4610

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IRFB4610

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MOSFET N-CH 100V 73A TO220AB

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仕様

属性 値
Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 50 V
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Packaging Tube

概要

Description

IRFB4610 is an N-channel, enhancement-mode power MOSFET from International Rectifier (now Infineon). It’s used as a fast, high-current switching element in power electronics.
Key points:
- Typical uses: low-side/high-side switches in buck/boost/DC-DC converters, motor drives, inverters.
- Characteristics: low on-resistance, high current capability, robust switching and avalanche energy.
- Gate drive: usually specified at around 10 V (some data may show 4.5–10 V variants); check the exact part variant.
- Packages: common power packages (eg, D2PAK/DPAK, TO-220), with thermal considerations requiring adequate heatsinking.
What to check in the datasheet:
- Maximum drain-source voltage (Vds) and continuous drain current (Id)
- On-resistance (Rds(on)) at the gate voltage you’ll use
- Total gate charge (Qg) and switching characteristics
- Thermal resistance and packaging details
- Avalanche energy rating for ruggedness
Note: IRFB4610 parts come in variants; always verify the exact datasheet revision for your part and application.

Features

IRFB4610 is a high-voltage, high-current N-channel MOSFET. Key features include:
- N-channel enhancement-mode MOSFET
- Vds around 100 V
- High current capability for power switching (tens of amps, depending on package)
- Low on-resistance for low conduction losses
- Fast switching performance with low gate charge
- Logic-level drive compatibility (Vgs typically 4–10 V)
- Avalanche-rated / rugged for inductive-load applications
- Good dv/dt and di/dt handling
- Available in multiple packages (e.g., TO-220AB, D2PAK/DPAK)
- RoHS-compliant / Pb-free
Note: exact Id and Rds(on) vary by package and data-sheet revision. For precise specs, refer to the specific package variant in the datasheet.

Pinout

IRFB4610 is an N-channel enhancement-mode power MOSFET.
- Pin count: 3 pins (G, D, S) plus the drain-tab in most packages.
- Typical pinout (TO-220 style): Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source; the tab/drain is connected to Drain.
- Function: High-current switching transistor used in power electronics (DC-DC converters, motor drives, etc.).

Manufacturer

Manufacturer: International Rectifier (IR). It was an American semiconductor company specializing in power management devices (power MOSFETs, IGBTs, drivers). IR is now part of Infineon Technologies, a German multinational semiconductor company.

Application

IRFB4610 is a high-speed, high-current IGBT used for switching power electronics. Typical applications include:
- Switch-mode power supplies and DC-DC converters
- Motor drives and variable-frequency drives (pumps, fans, compressors)
- Solar and other renewable-energy inverters (grid-tied and storage-based)
- Uninterruptible power supplies and backup power stages
- Induction heating and welding power sources
- DC-AC inverters for energy storage and general high-efficiency inverter modules

Package

IRFB4610 is a power MOSFET typically offered in two package variants: TO-220AB (through-hole) and D2PAK (TO-263) surface-mount. A Pb-free (PbF) version is available. Check the datasheet for the exact variant you need.

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