画像は参考用です
IRFB4615PBF
+BOMIRFB4615 - 12V-300V N-CHANNEL PO
-
メーカーインターナショナル・レクティファイアー
-
メーカー品番 #IRFB4615PBF
-
データシート IRFB4615PBF DataSheet
-
パッケージ TO-220-3
-
在庫状況7060
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 35A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 39mOhm @ 21A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 26 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1750 pF @ 50 V |
| Power Dissipation (Max) | 144W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
概要
Description
The IRFB4615PBF is commonly used in applications such as power supplies, motor drives, and DC-DC converters. Its fast switching speed and high current capabilities make it suitable for high-frequency applications. Additionally, its lead-free packaging aligns with environmental standards like RoHS, making it an eco-friendly choice. Overall, the IRFB4615PBF is a versatile and efficient component for various high-power electronic applications.
Equivalent
1. STMicroelectronics STP36NF06
2. ON Semiconductor NTP65N25
3. NXP PSMN3R0-30YLD
4. Infineon IPB65R045C7
These equivalents may vary slightly in specifications, so always compare datasheets to ensure compatibility with your specific application requirements.
Features
1. N-Channel MOSFET: It is an N-channel MOSFET, which is typically used for switching and amplification.
2. Voltage and Current Ratings: The device can handle a maximum drain-source voltage (V_DS) of 150V and has a continuous drain current (I_D) rating of around 75A.
3. Low On-Resistance: It features a low R_DS(on) of approximately 0.027 ohms, which improves efficiency by minimizing power losses during operation.
4. High-Speed Switching: The MOSFET is designed for fast switching speeds, which is beneficial for applications requiring rapid switching cycles.
5. Thermal Resistance: It has a low thermal resistance, aiding in heat dissipation and allowing it to handle high power levels.
6. RoHS Compliant: The IRFB4615PBF is RoHS compliant, making it environmentally friendly by restricting hazardous materials.
These features make the IRFB4615PBF suitable for a variety of applications, including power supplies, converters, and motor drives.
Pinout
1. Gate (G): This is the control terminal of the MOSFET. A voltage applied to the gate regulates the current flow between the drain and source.
2. Drain (D): The drain is the terminal where the current flows out of the MOSFET. In N-channel MOSFETs like the IRFB4615PBF, the drain is connected to the more positive side of the circuit when the MOSFET is in operation.
3. Source (S): The source is the terminal where the current enters the MOSFET. It is typically connected to the ground or the more negative side of the circuit in N-channel MOSFETs.
The IRFB4615PBF is used in high-efficiency switching applications due to its ability to handle high voltages and currents with low on-resistance.
Manufacturer
Application
1. Switching Power Supplies: Used for efficient power conversion in SMPS.
2. Motor Drives: Suitable for driving motors in industrial and automotive applications.
3. DC-DC Converters: Facilitates voltage regulation and conversion.
4. Inverters: Used in solar inverters and UPS systems for power conversion.
5. LED Drivers: Ensures efficient LED lighting control.
6. Audio Amplifiers: Utilized in high-power audio amplifier circuits.
7. Battery Management Systems: Supports efficient battery charging and management.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.