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IRFB5615PBF
+BOMMOSFET N-CH 150V 35A TO220AB
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRFB5615PBF
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データシート IRFB5615PBF DataSheet
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パッケージ TO-220-3
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在庫状況6679
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 35A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 39mOhm @ 21A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1750 pF @ 50 V |
| Power Dissipation (Max) | 144W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
概要
Description
Key specifications include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of approximately 60 volts and a continuous drain current (I_D) of around 68 amperes, making it suitable for medium power applications.
2. R_DS(on): It has a low on-state resistance (R_DS(on)), ensuring lower power loss and improved efficiency during operation.
3. Package Type: Often available in a TO-220 package, which provides good thermal performance, making it suitable for use with heatsinks.
4. Applications: It is commonly used in applications such as DC-DC converters, motor drives, and other power management systems where high efficiency and reliable switching are required.
Overall, the IRFB5615PBF offers efficient power handling and is a reliable component for various electronic circuit designs.
Equivalent
1. STMicroelectronics' STP60NF06
2. Fairchild Semiconductor's FDP6030BL
3. ON Semiconductor's NTP60N06
4. Infineon's IPP60R099P6
These alternatives offer similar specifications, such as voltage, current ratings, and package types. Always verify the specific electrical and thermal characteristics to ensure compatibility for your application.
Features
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) of up to 60V and a continuous drain current (I_D) of 68A, making it suitable for medium power applications.
2. R_DS(on): The device offers a low on-resistance, typically around 9.0 milliohms, which minimizes power loss and enhances efficiency.
3. Thermal Performance: It is designed with good thermal resistance characteristics, which help maintain performance under high power conditions.
4. Package Type: Comes in a TO-220 package, facilitating easy mounting and heat dissipation.
5. Applications: Commonly used in applications such as DC-DC converters, motor controllers, and power management systems.
6. RoHS Compliant: It adheres to environmental standards, being lead-free and RoHS compliant.
These features make the IRFB5615PBF a versatile component in various power electronic applications.
Pinout
1. Gate (G): This pin controls the MOSFET's switching. By applying a voltage here, you can turn the MOSFET on or off.
2. Drain (D): This pin is the main current path when the MOSFET is in the "on" state. The current flows from drain to source.
3. Source (S): This pin serves as the return path for the current flowing through the MOSFET.
The IRFB5615PBF provides high-speed switching and low on-state resistance, making it suitable for various power management tasks, such as DC-DC converters and motor drives.
Manufacturer
Application
1. Switching Power Supplies: Utilized for high-efficiency power conversion in applications like computer power supplies and industrial power systems.
2. Motor Drives: Employed in controlling and driving motors in automotive and industrial settings.
3. DC-DC Converters: Used in voltage regulation applications to ensure stable output in communications and computing devices.
4. Uninterruptible Power Supplies (UPS): Helps in maintaining power delivery and protecting equipment during power outages.
5. Renewable Energy Systems: Applied in solar inverters and wind energy systems for efficient energy conversion and management.
These applications benefit from the MOSFET’s low on-resistance and fast switching capabilities.