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IRFB7530PBF
+BOMMOSFET N-CH 60V 195A TO220AB
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRFB7530PBF
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データシート IRFB7530PBF DataSheet
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在庫状況4164
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仕様
| 属性 | 値 |
| Series | HEXFET®, StrongIRFET™ |
| Part Status | Not For New Designs |
| Base Product Number | IRFB7530 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 411 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13703 pF @ 25 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package | TO-220-3 |
| Packaging | Tube |
概要
Description
The IRFB7530PBF is an N-channel power MOSFET designed for high-efficiency switching applications. Manufactured by Infineon Technologies, it is part of the HEXFET series, known for its low on-resistance and fast switching capabilities. The IRFB7530PBF is typically used in applications such as DC-DC converters, motor drives, and power management systems.
Key specifications include a maximum drain-source voltage (V_DS) of 75V and a continuous drain current (I_D) of up to 120A under specified conditions. The MOSFET features a low on-state resistance (R_DS(on)), approximately 6.8 mΩ, which helps minimize power losses and improve overall efficiency. It is housed in a TO-220 package, providing reliable thermal performance and ease of mounting.
The device also offers a fast switching speed and high avalanche energy rating, making it suitable for demanding applications requiring robust performance and reliability. Overall, the IRFB7530PBF is suitable for designers looking for a cost-effective and efficient MOSFET solution in high-power electronics.
Key specifications include a maximum drain-source voltage (V_DS) of 75V and a continuous drain current (I_D) of up to 120A under specified conditions. The MOSFET features a low on-state resistance (R_DS(on)), approximately 6.8 mΩ, which helps minimize power losses and improve overall efficiency. It is housed in a TO-220 package, providing reliable thermal performance and ease of mounting.
The device also offers a fast switching speed and high avalanche energy rating, making it suitable for demanding applications requiring robust performance and reliability. Overall, the IRFB7530PBF is suitable for designers looking for a cost-effective and efficient MOSFET solution in high-power electronics.
Equivalent
The IRFB7530PBF is a N-channel MOSFET known for its low on-resistance and high current capability. Equivalent products include:
1. STMicroelectronics STP110N8F6 - Comparable in voltage and current ratings.
2. ON Semiconductor NTP111N08 - Offers similar performance characteristics.
3. Vishay SiHP054N65E - Another potential equivalent with similar specifications.
Ensure compatibility by checking the datasheet for precise electrical characteristics and pin configuration.
1. STMicroelectronics STP110N8F6 - Comparable in voltage and current ratings.
2. ON Semiconductor NTP111N08 - Offers similar performance characteristics.
3. Vishay SiHP054N65E - Another potential equivalent with similar specifications.
Ensure compatibility by checking the datasheet for precise electrical characteristics and pin configuration.
Features
The IRFB7530PBF is a power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage & Current Ratings: It has a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 120A.
2. R_DS(on): The device offers a low on-state resistance (R_DS(on)) of 6.3 mΩ, which minimizes power losses and enhances efficiency.
3. Technology: It utilizes advanced HEXFET® technology, ensuring high performance in switching applications.
4. Thermal Performance: The package is designed to effectively dissipate heat, supporting reliable operation under high-current conditions.
5. Package Type: Available in a TO-220 package, which is common and easy to handle for PCB mounting.
6. Applications: Suitable for use in applications such as DC-DC converters, motor drives, and power management systems.
7. Temperature Range: It operates within a temperature range suitable for various environments, ensuring versatility in application.
These features make the IRFB7530PBF ideal for high-power, high-efficiency applications requiring robust and reliable MOSFET performance.
1. Voltage & Current Ratings: It has a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 120A.
2. R_DS(on): The device offers a low on-state resistance (R_DS(on)) of 6.3 mΩ, which minimizes power losses and enhances efficiency.
3. Technology: It utilizes advanced HEXFET® technology, ensuring high performance in switching applications.
4. Thermal Performance: The package is designed to effectively dissipate heat, supporting reliable operation under high-current conditions.
5. Package Type: Available in a TO-220 package, which is common and easy to handle for PCB mounting.
6. Applications: Suitable for use in applications such as DC-DC converters, motor drives, and power management systems.
7. Temperature Range: It operates within a temperature range suitable for various environments, ensuring versatility in application.
These features make the IRFB7530PBF ideal for high-power, high-efficiency applications requiring robust and reliable MOSFET performance.
Pinout
The IRFB7530PBF is an N-channel MOSFET transistor. It comes in a standard TO-220 package, which typically has three pins. The pin configuration for the IRFB7530PBF is as follows:
1. Gate (G): This pin is used to control the MOSFET's on/off state. A voltage applied to the gate creates an electric field that turns the MOSFET on by allowing current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows when the MOSFET is in the 'on' state. It connects to the load that the MOSFET is switching.
3. Source (S): This pin serves as the return path for the current. It is typically connected to the ground or to a negative voltage in many applications.
The IRFB7530PBF is used in applications requiring high efficiency and fast switching, such as power supplies, motor drives, and other power management systems. It is known for its low on-state resistance, which helps in reducing power loss.
1. Gate (G): This pin is used to control the MOSFET's on/off state. A voltage applied to the gate creates an electric field that turns the MOSFET on by allowing current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows when the MOSFET is in the 'on' state. It connects to the load that the MOSFET is switching.
3. Source (S): This pin serves as the return path for the current. It is typically connected to the ground or to a negative voltage in many applications.
The IRFB7530PBF is used in applications requiring high efficiency and fast switching, such as power supplies, motor drives, and other power management systems. It is known for its low on-state resistance, which helps in reducing power loss.
Manufacturer
The IRFB7530PBF is manufactured by Infineon Technologies AG, a leading semiconductor manufacturer based in Germany. Infineon is known for producing a broad range of semiconductor solutions, including microcontrollers, power electronics, sensors, and security solutions. They cater to various industries such as automotive, industrial, consumer electronics, and communication technologies.
The company focuses on developing products that support energy efficiency, mobility, and security. Infineon is recognized for its innovation and commitment to sustainability, continuously advancing technology to meet the demands of modern applications. The IRFB7530PBF, in particular, is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used for power management applications, showcasing Infineon's expertise in power electronics.
The company focuses on developing products that support energy efficiency, mobility, and security. Infineon is recognized for its innovation and commitment to sustainability, continuously advancing technology to meet the demands of modern applications. The IRFB7530PBF, in particular, is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used for power management applications, showcasing Infineon's expertise in power electronics.
Application
The IRFB7530PBF is a power MOSFET designed for high-efficiency applications. It is commonly used in:
1. Power Supplies: Switching power supplies for computers, consumer electronics, and industrial equipment.
2. Motor Drives: DC motor control for industrial and automotive applications.
3. Inverters: Solar inverters and uninterruptible power supplies (UPS).
4. Battery Management: Electric vehicles and energy storage systems.
5. Converters: DC-DC converters for telecommunications and data centers.
Its low on-resistance and high current handling capability make it suitable for these applications, where efficiency and reliability are crucial.
1. Power Supplies: Switching power supplies for computers, consumer electronics, and industrial equipment.
2. Motor Drives: DC motor control for industrial and automotive applications.
3. Inverters: Solar inverters and uninterruptible power supplies (UPS).
4. Battery Management: Electric vehicles and energy storage systems.
5. Converters: DC-DC converters for telecommunications and data centers.
Its low on-resistance and high current handling capability make it suitable for these applications, where efficiency and reliability are crucial.
Package
The IRFB7530PBF is a power MOSFET, and it typically comes in a TO-220 package. This type of package is commonly used for high-power and high-voltage applications due to its ability to efficiently dissipate heat.
