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IRFB7540PBF
+BOMMOSFET N-CH 60V 110A TO220
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRFB7540PBF
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在庫状況7970
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | HEXFET®, StrongIRFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 65A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4555 pF @ 25 V |
| Power Dissipation (Max) | 160W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Base Product Number | IRFB7540 |
概要
Description
The IRFB7540PBF is a high-performance N-channel MOSFET designed for various power applications. It features a low on-resistance (R_DS(on)) of around 4.5 mΩ, making it suitable for efficient power management and switching applications. This MOSFET can handle a continuous drain current of up to 80A and has a maximum drain-source voltage (V_DS) rating of 40V, which allows it to be used in both low- and high-voltage circuits.
The IRFB7540PBF is particularly useful in applications such as DC-DC converters, power supplies, and motor drives, where efficiency and thermal performance are crucial. Its package type typically allows for effective heat dissipation, enhancing reliability in demanding environments. Additionally, the "PBF" suffix indicates that the component is lead-free, aligning with RoHS standards for environmental compliance. Overall, the IRFB7540PBF is a robust choice for engineers seeking reliable and efficient MOSFET solutions in their designs.
The IRFB7540PBF is particularly useful in applications such as DC-DC converters, power supplies, and motor drives, where efficiency and thermal performance are crucial. Its package type typically allows for effective heat dissipation, enhancing reliability in demanding environments. Additionally, the "PBF" suffix indicates that the component is lead-free, aligning with RoHS standards for environmental compliance. Overall, the IRFB7540PBF is a robust choice for engineers seeking reliable and efficient MOSFET solutions in their designs.
Equivalent
Equivalent products to the IRFB7540PBF include the AOD8N60, STP75NF75, and FQD30N60. Other alternatives may include the NTPF60N06 and the BUK7YB10-100. Always verify specifications such as voltage, current ratings, and package type to ensure compatibility for your application.
Features
The IRFB7540PBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 40V, making it suitable for various power applications.
2. Current Rating: The device can handle continuous drain currents of up to 90A, ensuring robust performance in demanding environments.
3. Rds(on): It boasts a low on-resistance (Rds(on)) of approximately 4.5 mΩ at a gate-source voltage (Vgs) of 10V, which enhances efficiency by minimizing power losses.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, allowing for easy driving with low gate voltages.
5. Fast Switching Speed: It features fast switching capabilities, making it ideal for applications such as DC-DC converters, motor control, and power management systems.
6. Package: Available in a TO-220 package, facilitating effective heat dissipation.
Overall, the IRFB7540PBF is suitable for a wide range of applications requiring reliable performance and efficiency.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 40V, making it suitable for various power applications.
2. Current Rating: The device can handle continuous drain currents of up to 90A, ensuring robust performance in demanding environments.
3. Rds(on): It boasts a low on-resistance (Rds(on)) of approximately 4.5 mΩ at a gate-source voltage (Vgs) of 10V, which enhances efficiency by minimizing power losses.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, allowing for easy driving with low gate voltages.
5. Fast Switching Speed: It features fast switching capabilities, making it ideal for applications such as DC-DC converters, motor control, and power management systems.
6. Package: Available in a TO-220 package, facilitating effective heat dissipation.
Overall, the IRFB7540PBF is suitable for a wide range of applications requiring reliable performance and efficiency.
Pinout
The IRFB7540PBF is an N-channel MOSFET with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is the terminal through which the current exits the device. It is typically connected to ground or the negative side of the power supply in a typical application.
The IRFB7540PBF is commonly used in applications such as power supplies, motor drives, and switching circuits due to its high efficiency and fast switching capabilities.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is the terminal through which the current exits the device. It is typically connected to ground or the negative side of the power supply in a typical application.
The IRFB7540PBF is commonly used in applications such as power supplies, motor drives, and switching circuits due to its high efficiency and fast switching capabilities.
Manufacturer
The manufacturer of the IRFB7540PBF is Infineon Technologies. Infineon is a global semiconductor company based in Germany, specializing in the production of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company focuses on power management, sensor technologies, and security solutions. Infineon is recognized for its innovations in power semiconductor devices, such as MOSFETs, IGBTs, and integrated circuits, which are essential for energy efficiency and performance in electronic systems. The IRFB7540PBF is a power MOSFET designed for high-performance applications, highlighting Infineon's commitment to delivering advanced technology in the semiconductor industry.
Application
The IRFB7540PBF is an N-channel MOSFET primarily used in power management applications. Key application areas include:
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Motor Control: Inverters and drivers for electric motors.
3. Power Amplifiers: In RF and audio applications.
4. Switching Power Supplies: For high-efficiency energy conversion.
5. Battery Management Systems: In electric vehicles and renewable energy systems.
6. Power Electronics: In applications requiring high-speed switching and low conduction losses.
Its high voltage and current ratings make it suitable for various industrial and consumer electronics applications.
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Motor Control: Inverters and drivers for electric motors.
3. Power Amplifiers: In RF and audio applications.
4. Switching Power Supplies: For high-efficiency energy conversion.
5. Battery Management Systems: In electric vehicles and renewable energy systems.
6. Power Electronics: In applications requiring high-speed switching and low conduction losses.
Its high voltage and current ratings make it suitable for various industrial and consumer electronics applications.
Package
The IRFB7540PBF is packaged in a TO-220 form factor. This package type is characterized by its metal tab for heat dissipation and is commonly used for power MOSFETs, allowing for effective thermal management in various electronic applications.
