画像は参考用です
IRFBG20PBF
+BOMMOSFET N-CH 1000V 1.4A TO220AB
-
メーカービシェイ・シリコニクス
-
メーカー品番 #IRFBG20PBF
-
データシート IRFBG20PBF DataSheet
-
パッケージ TO-220-3
-
在庫状況2657
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 1.4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 11Ohm @ 840mA, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 500 pF @ 25 V |
| Power Dissipation (Max) | 54W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
概要
Description
The IRFBG20PBF is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-power applications and is commonly used in power management systems, motor drives, and other industrial applications. The MOSFET features a robust design with a high voltage and current rating, enabling efficient switching and amplification of electrical signals.
Key specifications typically include a low on-resistance, which minimizes power loss and improves efficiency, and a high-speed switching capability, which is crucial for applications requiring fast response times. The "PBF" suffix indicates that the device is lead-free, aligning with environmental regulations and standards. This component is generally available in a TO-220 package, facilitating easy mounting and integration into various electronic circuits.
Overall, the IRFBG20PBF is valued for its reliability, efficiency, and performance in demanding electrical environments. For precise usage and specifications, consulting the datasheet provided by the manufacturer is recommended.
Key specifications typically include a low on-resistance, which minimizes power loss and improves efficiency, and a high-speed switching capability, which is crucial for applications requiring fast response times. The "PBF" suffix indicates that the device is lead-free, aligning with environmental regulations and standards. This component is generally available in a TO-220 package, facilitating easy mounting and integration into various electronic circuits.
Overall, the IRFBG20PBF is valued for its reliability, efficiency, and performance in demanding electrical environments. For precise usage and specifications, consulting the datasheet provided by the manufacturer is recommended.
Equivalent
The IRFBG20PBF is a HEXFET power MOSFET commonly used in power management applications. Equivalent products include:
1. STMicroelectronics STP55NF06
2. ON Semiconductor FQP50N06
3. NXP PSMN017-30PL
4. Vishay SiHF540
These equivalents have similar voltage, current ratings, and package types, though it's essential to verify specific electrical characteristics and package compatibility for your application.
1. STMicroelectronics STP55NF06
2. ON Semiconductor FQP50N06
3. NXP PSMN017-30PL
4. Vishay SiHF540
These equivalents have similar voltage, current ratings, and package types, though it's essential to verify specific electrical characteristics and package compatibility for your application.
Features
The IRFBG20PBF is an N-channel power MOSFET produced by Infineon Technologies. Here are its key features:
1. Voltage and Current Ratings:
- Drain-Source Voltage (Vds): 200V
- Continuous Drain Current (Id): 17A at 25°C
2. Low On-Resistance:
- Rds(on) is approximately 0.18 ohms, which facilitates higher efficiency by reducing conduction losses.
3. Fast Switching Performance:
- Designed for quick switching, which is beneficial in applications like switch-mode power supplies and DC-DC converters.
4. Robust Design:
- Capable of handling high energy in avalanche and commutation modes, making it suitable for demanding applications.
5. Package Type:
- Available in a TO-220 package, which offers good heat dissipation characteristics.
6. Enhanced Safe Operating Area:
- Provides reliability in demanding conditions due to its robust design.
7. Compliant with Industry Standards:
- Lead-free and RoHS compliant, aligning with environmental and safety standards.
These features make the IRFBG20PBF suitable for various power management applications, including industrial and consumer electronics.
1. Voltage and Current Ratings:
- Drain-Source Voltage (Vds): 200V
- Continuous Drain Current (Id): 17A at 25°C
2. Low On-Resistance:
- Rds(on) is approximately 0.18 ohms, which facilitates higher efficiency by reducing conduction losses.
3. Fast Switching Performance:
- Designed for quick switching, which is beneficial in applications like switch-mode power supplies and DC-DC converters.
4. Robust Design:
- Capable of handling high energy in avalanche and commutation modes, making it suitable for demanding applications.
5. Package Type:
- Available in a TO-220 package, which offers good heat dissipation characteristics.
6. Enhanced Safe Operating Area:
- Provides reliability in demanding conditions due to its robust design.
7. Compliant with Industry Standards:
- Lead-free and RoHS compliant, aligning with environmental and safety standards.
These features make the IRFBG20PBF suitable for various power management applications, including industrial and consumer electronics.
Pinout
The IRFBG20PBF is a power MOSFET, specifically an N-channel MOSFET. It typically comes in a TO-220 package, which has three pins. The pin count and functions for the IRFBG20PBF are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows into the MOSFET when it is in the "on" state.
3. Source (S): The source is the terminal through which the main current flows out of the MOSFET.
This MOSFET is used for applications requiring high efficiency and fast switching. It is commonly employed in power management, automotive, and various other electronic applications.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows into the MOSFET when it is in the "on" state.
3. Source (S): The source is the terminal through which the main current flows out of the MOSFET.
This MOSFET is used for applications requiring high efficiency and fast switching. It is commonly employed in power management, automotive, and various other electronic applications.
Manufacturer
The IRFBG20PBF is manufactured by Infineon Technologies. Infineon is a leading global semiconductor company that specializes in a wide range of electronic solutions. They focus on various sectors, including automotive, industrial power control, power management and multimarket, as well as digital security solutions. Infineon's products are integral to applications such as energy efficiency, mobility, and security, contributing to advancements in technology across multiple industries.
Application
The IRFBG20PBF is a power MOSFET commonly used in various applications requiring efficient switching and power management. Its typical application areas include:
1. Power Supply Units: Used in AC/DC converters and DC/DC regulators.
2. Motor Drives: Suitable for controlling motors in industrial and consumer appliances.
3. Inverters: Applied in solar inverters and UPS systems for converting DC to AC.
4. Automotive: Utilized in electronic control units and other automotive power applications.
5. Lighting: Employed in LED drivers and ballast circuits.
6. Industrial Equipment: Used in robotics and automation systems for switching operations.
Its robust design makes it ideal for high-efficiency and high-frequency applications.
1. Power Supply Units: Used in AC/DC converters and DC/DC regulators.
2. Motor Drives: Suitable for controlling motors in industrial and consumer appliances.
3. Inverters: Applied in solar inverters and UPS systems for converting DC to AC.
4. Automotive: Utilized in electronic control units and other automotive power applications.
5. Lighting: Employed in LED drivers and ballast circuits.
6. Industrial Equipment: Used in robotics and automation systems for switching operations.
Its robust design makes it ideal for high-efficiency and high-frequency applications.
Package
The IRFBG20PBF is a power MOSFET with a TO-220 package type. This package is known for its ability to handle relatively high power levels and features three leads for connection.
