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IRFHM830TRPBF
+BOMMOSFET N-CH 30V 21A/40A PQFN
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRFHM830TRPBF
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データシート IRFHM830TRPBF DataSheet
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在庫状況4639
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仕様
| 属性 | 値 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | IRFHM830 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2155 pF @ 25 V |
| Power Dissipation (Max) | 2.7W (Ta), 37W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN-Dual (3.3x3.3) |
| Package / Case | 8-PowerVDFN |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概要
Description
The IRFHM830TRPBF is a power MOSFET manufactured by Infineon Technologies, commonly used for applications requiring high efficiency and reliability. It belongs to the HEXFET® Power MOSFET family, known for their ruggedness and low on-resistance. Specifically, this component is designed for high-speed switching applications, making it suitable for use in power supplies, motor drives, and other power management systems.
Key features include a maximum drain-source voltage (V_ds) of 30V, a continuous drain current (I_d) of 195A, and a low on-resistance (R_ds(on)) of about 1.5 mΩ. The device is packaged in a TO-220 Fullpak, which provides efficient thermal performance and ease of assembly. Its robust design targets energy-efficient solutions by minimizing power losses, thereby enhancing overall system performance. Additionally, the device is lead-free and RoHS compliant, aligning with environmental and safety standards. Overall, the IRFHM830TRPBF is a reliable choice for demanding applications requiring efficient power management.
Key features include a maximum drain-source voltage (V_ds) of 30V, a continuous drain current (I_d) of 195A, and a low on-resistance (R_ds(on)) of about 1.5 mΩ. The device is packaged in a TO-220 Fullpak, which provides efficient thermal performance and ease of assembly. Its robust design targets energy-efficient solutions by minimizing power losses, thereby enhancing overall system performance. Additionally, the device is lead-free and RoHS compliant, aligning with environmental and safety standards. Overall, the IRFHM830TRPBF is a reliable choice for demanding applications requiring efficient power management.
Equivalent
The IRFHM830TRPBF is a MOSFET from Infineon Technologies. Equivalent products may include:
1. STMicroelectronics: STP55NF06
2. ON Semiconductor: FDB7030BL
3. Nexperia: PSMN3R5-30PL
4. Vishay: SiHB30N60E
These equivalents might not be identical but offer similar functionality. Always check datasheets to ensure compatibility with your application.
1. STMicroelectronics: STP55NF06
2. ON Semiconductor: FDB7030BL
3. Nexperia: PSMN3R5-30PL
4. Vishay: SiHB30N60E
These equivalents might not be identical but offer similar functionality. Always check datasheets to ensure compatibility with your application.
Features
The IRFHM830TRPBF is a N-channel Power MOSFET from Infineon Technologies, designed for high-efficiency power management applications. Key features include:
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) rating of 500V and a continuous drain current (I_D) of 4.5A, making it suitable for various power switching applications.
2. R_DS(on): The device offers a low on-resistance of around 1.5 Ohms, which helps in reducing power loss and improving efficiency.
3. Package: It is available in a standard D2PAK package, which provides good thermal performance and ease of mounting.
4. Temperature Range: The MOSFET operates efficiently over a wide temperature range, typically from -55°C to 150°C.
5. Applications: It is ideal for use in industrial and consumer electronics, including power supplies, DC-DC converters, and motor drives.
6. Technology: Utilizes advanced process technology to deliver superior switching performance and minimal conduction loss.
These features make the IRFHM830TRPBF a reliable choice for demanding power management tasks.
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) rating of 500V and a continuous drain current (I_D) of 4.5A, making it suitable for various power switching applications.
2. R_DS(on): The device offers a low on-resistance of around 1.5 Ohms, which helps in reducing power loss and improving efficiency.
3. Package: It is available in a standard D2PAK package, which provides good thermal performance and ease of mounting.
4. Temperature Range: The MOSFET operates efficiently over a wide temperature range, typically from -55°C to 150°C.
5. Applications: It is ideal for use in industrial and consumer electronics, including power supplies, DC-DC converters, and motor drives.
6. Technology: Utilizes advanced process technology to deliver superior switching performance and minimal conduction loss.
These features make the IRFHM830TRPBF a reliable choice for demanding power management tasks.
Pinout
The IRFHM830TRPBF is a MOSFET transistor manufactured by Infineon Technologies. It is part of the HEXFET® Power MOSFET family. This specific MOSFET is designed for applications requiring efficient power management. Here are its relevant details:
- Pin Count: The IRFHM830TRPBF comes in a standard package with three pins.
- Function:
- Gate (G): This pin controls the MOSFET switching. Applying a voltage to the gate turns the MOSFET on, allowing current to flow between the drain and the source.
- Drain (D): This pin is connected to the load. When the MOSFET is on, current flows from the drain to the source.
- Source (S): This is the terminal where the current exits the MOSFET.
This MOSFET is typically used in switching applications, offering low on-state resistance and fast switching speeds, which makes it suitable for power supply designs, motor drives, and other applications requiring efficient voltage and current control.
- Pin Count: The IRFHM830TRPBF comes in a standard package with three pins.
- Function:
- Gate (G): This pin controls the MOSFET switching. Applying a voltage to the gate turns the MOSFET on, allowing current to flow between the drain and the source.
- Drain (D): This pin is connected to the load. When the MOSFET is on, current flows from the drain to the source.
- Source (S): This is the terminal where the current exits the MOSFET.
This MOSFET is typically used in switching applications, offering low on-state resistance and fast switching speeds, which makes it suitable for power supply designs, motor drives, and other applications requiring efficient voltage and current control.
Manufacturer
The IRFHM830TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that designs, develops, and produces a wide range of semiconductor solutions. They specialize in products for automotive, industrial power control, power management, digital security solutions, and more. Infineon is known for its innovation in the semiconductor industry, focusing on energy efficiency, mobility, and security applications.
Application
The IRFHM830TRPBF is a rugged HEXFET power MOSFET, commonly used in applications requiring efficient power management and high-speed switching. Its applications include:
1. Power Supplies: Used in switch-mode power supplies for efficient voltage regulation.
2. Motor Control: Ideal for controlling motors in industrial and automotive applications.
3. Inverters: Utilized in DC-AC inverters for solar and renewable energy systems.
4. Audio Amplifiers: Suitable for use in Class D audio amplifiers due to its low distortion characteristics.
5. DC-DC Converters: Used in DC-DC converter circuits for portable electronics and telecom equipment.
6. Battery Management: Applicable in battery protection and management systems.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
1. Power Supplies: Used in switch-mode power supplies for efficient voltage regulation.
2. Motor Control: Ideal for controlling motors in industrial and automotive applications.
3. Inverters: Utilized in DC-AC inverters for solar and renewable energy systems.
4. Audio Amplifiers: Suitable for use in Class D audio amplifiers due to its low distortion characteristics.
5. DC-DC Converters: Used in DC-DC converter circuits for portable electronics and telecom equipment.
6. Battery Management: Applicable in battery protection and management systems.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
Package
The IRFHM830TRPBF is a MOSFET from Infineon Technologies packaged in a DPAK (TO-252) form. This surface-mount package is designed for efficient thermal performance and is commonly used in power management applications.
