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IRFP260
+BOMMOSFET N-CH 200V 46A TO247AD
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メーカーイクシス
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メーカー品番 #IRFP260
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在庫状況4136
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 46A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 55mOhm @ 28A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 230 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3900 pF @ 25 V |
| Power Dissipation (Max) | 280W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 (IXTH) |
概要
Description
The IRFP260 is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for high-power applications. Designed by International Rectifier, it is known for its ability to handle large amounts of current and high voltages, making it suitable for use in power supplies, motor controls, and various switching applications.
Key features of the IRFP260 include:
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_ds) rating of 200V and can handle continuous drain currents of up to 46A, making it robust for heavy-duty applications.
2. Low On-State Resistance: This MOSFET offers low on-state resistance (R_ds(on)), which minimizes power losses and improves efficiency in power conversion systems.
3. High-Speed Switching: The IRFP260 is capable of fast switching speeds, which is beneficial for reducing switching losses in high-frequency applications.
4. Thermal Performance: It features good thermal stability and efficient heat dissipation, often enhanced by mounting on heat sinks.
Overall, the IRFP260 is a reliable choice for designers looking for a high-power MOSFET in demanding electronic applications.
Key features of the IRFP260 include:
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_ds) rating of 200V and can handle continuous drain currents of up to 46A, making it robust for heavy-duty applications.
2. Low On-State Resistance: This MOSFET offers low on-state resistance (R_ds(on)), which minimizes power losses and improves efficiency in power conversion systems.
3. High-Speed Switching: The IRFP260 is capable of fast switching speeds, which is beneficial for reducing switching losses in high-frequency applications.
4. Thermal Performance: It features good thermal stability and efficient heat dissipation, often enhanced by mounting on heat sinks.
Overall, the IRFP260 is a reliable choice for designers looking for a high-power MOSFET in demanding electronic applications.
Equivalent
The IRFP260 is a power MOSFET commonly used in high-power applications. Equivalent or similar products include:
1. IRFP260N - Slight variant with similar specifications.
2. IRFP264 - Offers similar performance with some differences in rating.
3. STP60NF06 - Comparable in certain applications but ensure electrical compatibility.
4. IXFH36N50 - Another alternative with similar power handling capabilities.
Always verify the specific electrical characteristics and pin configurations before substituting to ensure compatibility in your application.
1. IRFP260N - Slight variant with similar specifications.
2. IRFP264 - Offers similar performance with some differences in rating.
3. STP60NF06 - Comparable in certain applications but ensure electrical compatibility.
4. IXFH36N50 - Another alternative with similar power handling capabilities.
Always verify the specific electrical characteristics and pin configurations before substituting to ensure compatibility in your application.
Features
The IRFP260 is a N-channel power MOSFET known for its high efficiency and reliability in power switching applications. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_ds) rating of 200V and can handle a continuous drain current (I_d) of up to 46A.
2. On-Resistance: It has a low on-resistance (R_ds(on)) of approximately 0.04 ohms, which minimizes power loss and improves efficiency.
3. Gate Threshold Voltage: The typical gate threshold voltage (V_gs(th)) is around 4V, making it compatible with standard drive circuits.
4. Fast Switching: The device offers fast switching speeds, which are crucial for high-frequency applications.
5. Total Gate Charge: It features a total gate charge (Q_g) of about 170 nC, facilitating efficient drive characteristics.
6. Package Type: The IRFP260 is typically available in a TO-247 package, which provides good thermal performance.
7. Applications: Commonly used in motor control, power supply, and inverter circuits.
Overall, the IRFP260's robust design and efficient performance make it suitable for a wide range of high-power applications.
1. Voltage and Current Ratings: It has a drain-source voltage (V_ds) rating of 200V and can handle a continuous drain current (I_d) of up to 46A.
2. On-Resistance: It has a low on-resistance (R_ds(on)) of approximately 0.04 ohms, which minimizes power loss and improves efficiency.
3. Gate Threshold Voltage: The typical gate threshold voltage (V_gs(th)) is around 4V, making it compatible with standard drive circuits.
4. Fast Switching: The device offers fast switching speeds, which are crucial for high-frequency applications.
5. Total Gate Charge: It features a total gate charge (Q_g) of about 170 nC, facilitating efficient drive characteristics.
6. Package Type: The IRFP260 is typically available in a TO-247 package, which provides good thermal performance.
7. Applications: Commonly used in motor control, power supply, and inverter circuits.
Overall, the IRFP260's robust design and efficient performance make it suitable for a wide range of high-power applications.
Pinout
The IRFP260 is an N-channel power MOSFET commonly used for high-power applications. It typically comes in a TO-247 package, which features three pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the conductivity between the drain and source. The gate is insulated from the other terminals by a thin oxide layer.
2. Drain (D): The drain is the terminal through which the main current flows. It is connected to the load in a circuit.
3. Source (S): The source is the terminal through which the current exits the MOSFET. It is typically connected to ground in many applications.
These pins work together to allow the IRFP260 to switch high currents and voltages, making it suitable for use in power supply circuits, motor controllers, and other high-power applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the conductivity between the drain and source. The gate is insulated from the other terminals by a thin oxide layer.
2. Drain (D): The drain is the terminal through which the main current flows. It is connected to the load in a circuit.
3. Source (S): The source is the terminal through which the current exits the MOSFET. It is typically connected to ground in many applications.
These pins work together to allow the IRFP260 to switch high currents and voltages, making it suitable for use in power supply circuits, motor controllers, and other high-power applications.
Manufacturer
The IRFP260 is a power MOSFET originally manufactured by International Rectifier (IR). International Rectifier was a company that specialized in power management technology, including power semiconductors and integrated circuits. It played a significant role in the development of power electronics and was known for its innovations in MOSFET technology.
In 2015, International Rectifier was acquired by Infineon Technologies, a leading German semiconductor manufacturer. Infineon Technologies operates globally and focuses on a variety of sectors, including automotive, industrial, consumer electronics, and power management. They provide a wide range of semiconductor solutions, such as microcontrollers, sensors, and power semiconductors, which include MOSFETs like the IRFP260.
Infineon continues to be a major player in the semiconductor industry, offering advanced technologies and solutions that aim to address energy efficiency, mobility, and security needs across different applications.
In 2015, International Rectifier was acquired by Infineon Technologies, a leading German semiconductor manufacturer. Infineon Technologies operates globally and focuses on a variety of sectors, including automotive, industrial, consumer electronics, and power management. They provide a wide range of semiconductor solutions, such as microcontrollers, sensors, and power semiconductors, which include MOSFETs like the IRFP260.
Infineon continues to be a major player in the semiconductor industry, offering advanced technologies and solutions that aim to address energy efficiency, mobility, and security needs across different applications.
Application
The IRFP260 is a power MOSFET widely used in applications requiring high current and voltage handling capabilities. Its common uses include:
1. Power Supplies: Acts as a switch in switching power supplies for efficient energy conversion.
2. Motor Control: Used in motor drivers for controlling speed and torque in industrial and consumer applications.
3. Inverters and Converters: Key component in DC-AC inverters and DC-DC converters for renewable energy systems.
4. Audio Amplifiers: Employed in high-power audio amplifiers for superior sound quality.
5. Lighting Systems: Used in high-intensity discharge lamps and LED drivers for efficient lighting solutions.
Its high efficiency and durability make it suitable for both industrial and consumer electronics.
1. Power Supplies: Acts as a switch in switching power supplies for efficient energy conversion.
2. Motor Control: Used in motor drivers for controlling speed and torque in industrial and consumer applications.
3. Inverters and Converters: Key component in DC-AC inverters and DC-DC converters for renewable energy systems.
4. Audio Amplifiers: Employed in high-power audio amplifiers for superior sound quality.
5. Lighting Systems: Used in high-intensity discharge lamps and LED drivers for efficient lighting solutions.
Its high efficiency and durability make it suitable for both industrial and consumer electronics.
Package
The IRFP260 is a power MOSFET transistor housed in a TO-247 package. This package type is designed for high-power applications, providing efficient thermal and electrical performance.
