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IRFP360
+BOMMOSFET N-CH 400V 23A TO247-3
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メーカービシェイ・シリコニクス
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メーカー品番 #IRFP360
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在庫状況3342
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Vishay Siliconix |
| Package | Tube |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 400 V |
| Current-ContinuousDrain(Id)@25°C | 23A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 200mOhm @ 14A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 210 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4500 pF @ 25 V |
| PowerDissipation(Max) | 280W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
概要
Description
IRFP360 is a high-voltage N-channel power MOSFET (enhancement-mode) from International Rectifier (now Infineon). It targets switching and amplification in power electronics.
Key points:
- Typical specs: Vds around 200 V; can handle several amps; Rds(on) from sub-ohm to a few tenths of an ohm depending on temperature and gate drive.
- Gate drive: threshold ~2–4 V; to minimize Rds(on) drive at about 10 V (some variants specify 8–12 V).
- Packages: common options include TO-220 and DPAK; used in DC-DC converters, motor controllers, inverters, and high-voltage switches.
- Selection: verify exact variant in the datasheet for Vds, Id, Rds(on), Qg, and package; ensure adequate heatsinking.
- Notes: newer MOSFETs offer lower Rds(on) and higher efficiency, so consider alternatives for new designs.
Key points:
- Typical specs: Vds around 200 V; can handle several amps; Rds(on) from sub-ohm to a few tenths of an ohm depending on temperature and gate drive.
- Gate drive: threshold ~2–4 V; to minimize Rds(on) drive at about 10 V (some variants specify 8–12 V).
- Packages: common options include TO-220 and DPAK; used in DC-DC converters, motor controllers, inverters, and high-voltage switches.
- Selection: verify exact variant in the datasheet for Vds, Id, Rds(on), Qg, and package; ensure adequate heatsinking.
- Notes: newer MOSFETs offer lower Rds(on) and higher efficiency, so consider alternatives for new designs.
Features
IRFP360 features (high-level)
- N-channel enhancement-mode power MOSFET
- Designed for high-voltage, high-current switching applications
- Low on-resistance for efficient conduction
- Fast switching with low gate charge
- Gate threshold typically around 2–4 V; fully turned on with standard gate drive
- Robust avalanche energy rating for inductive-load protection
- Wide safe operating area for switching and PWM use
- Available in TO-220 (and other) packages with good thermal handling
- Suitable for SMPS, DC-DC converters, motor drivers, and audio amps
- Often used as rugged, general-purpose power MOSFET in discrete designs
Note: Exact values (Vds, Id, Rds(on)) vary by lot and package; refer to the latest datasheet for precise specs.
- N-channel enhancement-mode power MOSFET
- Designed for high-voltage, high-current switching applications
- Low on-resistance for efficient conduction
- Fast switching with low gate charge
- Gate threshold typically around 2–4 V; fully turned on with standard gate drive
- Robust avalanche energy rating for inductive-load protection
- Wide safe operating area for switching and PWM use
- Available in TO-220 (and other) packages with good thermal handling
- Suitable for SMPS, DC-DC converters, motor drivers, and audio amps
- Often used as rugged, general-purpose power MOSFET in discrete designs
Note: Exact values (Vds, Id, Rds(on)) vary by lot and package; refer to the latest datasheet for precise specs.
Pinout
- Pin count: 3 (in a TO-220/TO-3P style package). Pinout (typical): Gate, Drain, Source (pin 1 G, pin 2 D, pin 3 S); the tab is connected to Drain.
- Function: N-channel enhancement-mode power MOSFET used as a high-current electronic switch or amplifier in power electronics (DC-DC converters, motor drivers, switching regulators, etc.). Gate controls conduction between Drain and Source.
- Function: N-channel enhancement-mode power MOSFET used as a high-current electronic switch or amplifier in power electronics (DC-DC converters, motor drivers, switching regulators, etc.). Gate controls conduction between Drain and Source.
Manufacturer
IRFP360 is manufactured by Infineon Technologies (currently using the IR brand, originally International Rectifier). International Rectifier was a U.S.-based semiconductor company specializing in power management devices; it was acquired by Infineon in 2015, making Infineon a German multinational semiconductor company.
Application
IRFP360 is an N-channel enhancement-mode power MOSFET (high-voltage). Typical applications include:
- High-speed switching in power electronics
- Switch-mode power supplies and DC-DC converters (buck/boost/flyback)
- Motor/actuator drives (DC and stepper motors)
- Inverters and H-bridge power stages
- Class-D audio amplifiers
- Renewable-energy/battery systems (solar inverters, UPS, automotive power electronics)
Concise and suitable for HV switching and moderate current tasks.
- High-speed switching in power electronics
- Switch-mode power supplies and DC-DC converters (buck/boost/flyback)
- Motor/actuator drives (DC and stepper motors)
- Inverters and H-bridge power stages
- Class-D audio amplifiers
- Renewable-energy/battery systems (solar inverters, UPS, automotive power electronics)
Concise and suitable for HV switching and moderate current tasks.
Package
IRFP360 is an N-channel power MOSFET in a TO-220AB through-hole package.
