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IRFP3710PBF
+BOMMOSFET N-CH 100V 57A TO247AC
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRFP3710PBF
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データシート IRFP3710PBF DataSheet
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パッケージ TO-247-3
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在庫状況3244
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 57A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 25mOhm @ 28A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 190 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3000 pF @ 25 V |
| PowerDissipation(Max) | 200W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
概要
Description
The IRFP3710PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It's designed for high-power applications, offering efficient switching and energy conversion. Key specifications include:
- Voltage Rating: It has a drain-source voltage rating of 100V, making it suitable for medium-voltage applications.
- Current Rating: The continuous drain current rating is approximately 57A at 25°C, which provides substantial current capacity.
- RDS(on): The on-resistance is typically low (around 23 milliohms), minimizing power loss and enhancing efficiency.
- Package: Encapsulated in a TO-247AC package, which aids in heat dissipation and facilitates easy mounting on heat sinks.
- Applications: It's commonly used in applications like power supplies, motor drives, DC-DC converters, and renewable energy systems.
The IRFP3710PBF is preferred for its robustness, reliability, and performance in demanding environments. Being lead-free, it complies with RoHS standards, making it an environmentally friendly choice.
- Voltage Rating: It has a drain-source voltage rating of 100V, making it suitable for medium-voltage applications.
- Current Rating: The continuous drain current rating is approximately 57A at 25°C, which provides substantial current capacity.
- RDS(on): The on-resistance is typically low (around 23 milliohms), minimizing power loss and enhancing efficiency.
- Package: Encapsulated in a TO-247AC package, which aids in heat dissipation and facilitates easy mounting on heat sinks.
- Applications: It's commonly used in applications like power supplies, motor drives, DC-DC converters, and renewable energy systems.
The IRFP3710PBF is preferred for its robustness, reliability, and performance in demanding environments. Being lead-free, it complies with RoHS standards, making it an environmentally friendly choice.
Equivalent
The IRFP3710PBF is a N-channel MOSFET. Equivalent products include:
1. STP55NF06from STMicroelectronics
2. FDP047N10 from ON Semiconductor
3. FQA70N10 from Fairchild Semiconductor
4. IXFH80N10 from IXYS Corporation
Ensure to check the datasheets for each to verify compatibility in key parameters like voltage, current, and packaging.
1. STP55NF06from STMicroelectronics
2. FDP047N10 from ON Semiconductor
3. FQA70N10 from Fairchild Semiconductor
4. IXFH80N10 from IXYS Corporation
Ensure to check the datasheets for each to verify compatibility in key parameters like voltage, current, and packaging.
Features
The IRFP3710PBF is a power MOSFET designed for efficient switching applications. Key features include:
1. VDSS: 100V, indicating the maximum drain-source voltage.
2. RDS(on): Approximately 23 mΩ, reflecting its low on-state resistance for minimized conduction losses.
3. ID: 57A continuous drain current capability at 25°C.
4. Package: TO-247AC, which supports high power applications and effective thermal management.
5. Technology: Utilizes advanced HEXFET technology for fast switching and improved reliability.
6. Temperature Range: Capable of operating in a wide temperature range, enhancing versatility in various environments.
7. RoHS Compliant: Environmentally friendly due to lead-free assembly.
These features make the IRFP3710PBF suitable for applications such as motor drives, power inverters, and high-efficiency power supplies where robust performance and reliability are crucial.
1. VDSS: 100V, indicating the maximum drain-source voltage.
2. RDS(on): Approximately 23 mΩ, reflecting its low on-state resistance for minimized conduction losses.
3. ID: 57A continuous drain current capability at 25°C.
4. Package: TO-247AC, which supports high power applications and effective thermal management.
5. Technology: Utilizes advanced HEXFET technology for fast switching and improved reliability.
6. Temperature Range: Capable of operating in a wide temperature range, enhancing versatility in various environments.
7. RoHS Compliant: Environmentally friendly due to lead-free assembly.
These features make the IRFP3710PBF suitable for applications such as motor drives, power inverters, and high-efficiency power supplies where robust performance and reliability are crucial.
Pinout
The IRFP3710PBF is a power MOSFET featuring a total of 3 pins. These pins and their functions are typically as follows:
1. Gate (G): This pin is used to control the MOSFET by applying a voltage that allows current to flow between the drain and source. It acts as the input for the switching operation.
2. Drain (D): The drain pin is where the load current enters the MOSFET. It is one of the main terminals for the current flow when the MOSFET is in the "on" state.
3. Source (S): The source pin is the terminal through which the current exits the MOSFET. It is usually connected to ground or the negative side of a power source in N-channel configurations.
The IRFP3710PBF is commonly used in applications requiring efficient power management and switching, such as power supplies, motor drives, and DC-DC converters, due to its high current capacity and low on-state resistance.
1. Gate (G): This pin is used to control the MOSFET by applying a voltage that allows current to flow between the drain and source. It acts as the input for the switching operation.
2. Drain (D): The drain pin is where the load current enters the MOSFET. It is one of the main terminals for the current flow when the MOSFET is in the "on" state.
3. Source (S): The source pin is the terminal through which the current exits the MOSFET. It is usually connected to ground or the negative side of a power source in N-channel configurations.
The IRFP3710PBF is commonly used in applications requiring efficient power management and switching, such as power supplies, motor drives, and DC-DC converters, due to its high current capacity and low on-state resistance.
Manufacturer
The IRFP3710PBF is manufactured by Infineon Technologies. Infineon is a semiconductor manufacturer that produces a wide range of electronic components. The company specializes in developing semiconductors for various applications, including automotive, industrial power control, power management, and digital security. Infineon is known for its work in power electronics, sensors, microcontrollers, security ICs, and other semiconductor solutions, catering to markets that require high reliability and efficiency.
Application
The IRFP3710PBF is a HEXFET power MOSFET commonly used in applications requiring high efficiency and fast switching. Key application areas include:
1. Power Supplies: Used in switched-mode power supplies (SMPS) for efficiency.
2. Motor Drives: Suitable for controlling motors in industrial and automotive settings.
3. Inverters: Applied in solar inverters and UPS systems due to its reliable switching capabilities.
4. DC-DC Converters: Utilized for voltage regulation in various electronic devices.
5. Audio Amplifiers: Employed in Class D amplifiers for efficient sound amplification.
Its low on-resistance, high-speed performance, and thermal efficiency make it versatile across these applications.
1. Power Supplies: Used in switched-mode power supplies (SMPS) for efficiency.
2. Motor Drives: Suitable for controlling motors in industrial and automotive settings.
3. Inverters: Applied in solar inverters and UPS systems due to its reliable switching capabilities.
4. DC-DC Converters: Utilized for voltage regulation in various electronic devices.
5. Audio Amplifiers: Employed in Class D amplifiers for efficient sound amplification.
Its low on-resistance, high-speed performance, and thermal efficiency make it versatile across these applications.
Package
The IRFP3710PBF is a power MOSFET with a TO-247 package type. This package is commonly used for high-power and high-voltage applications, providing efficient thermal management and electrical performance.
