仕様
| 属性 | 値 |
| Package | Box |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 14A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 400mOhm @ 8.4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 150 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2600 pF @ 25 V |
| PowerDissipation(Max) | 190W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
概要
Description
The IRFP450PBF is an N-channel power MOSFET from Infineon Technologies, designed for high-power applications. Key features include:
- Voltage Rating: 500V
- Current Rating: 14A (continuous)
- Low On-Resistance (RDS(on)): 0.4Ω (max)
- High Switching Speed
- TO-247 Package for efficient heat dissipation
Commonly used in switching power supplies, motor drives, inverters, and amplifiers, it offers robust performance in high-voltage circuits. The PBF suffix indicates lead-free (RoHS-compliant) construction.
Advantages:
✔ High voltage tolerance
✔ Low gate drive requirements
✔ Good thermal performance
Limitations:
✖ Requires proper heat sinking at high currents
✖ Not suitable for ultra-low-power applications
For optimal performance, ensure proper gate drive and thermal management. Always refer to the datasheet for detailed specifications.
- Voltage Rating: 500V
- Current Rating: 14A (continuous)
- Low On-Resistance (RDS(on)): 0.4Ω (max)
- High Switching Speed
- TO-247 Package for efficient heat dissipation
Commonly used in switching power supplies, motor drives, inverters, and amplifiers, it offers robust performance in high-voltage circuits. The PBF suffix indicates lead-free (RoHS-compliant) construction.
Advantages:
✔ High voltage tolerance
✔ Low gate drive requirements
✔ Good thermal performance
Limitations:
✖ Requires proper heat sinking at high currents
✖ Not suitable for ultra-low-power applications
For optimal performance, ensure proper gate drive and thermal management. Always refer to the datasheet for detailed specifications.
Equivalent
Equivalent products to the IRFP450PBF (N-channel MOSFET, 500V, 14A, 190W) include:
- IRFP450LC (similar specs, different package)
- IRFP460 (500V, 20A, 190W)
- STP20NM50FD (500V, 20A, 190W, TO-220)
- FQP27N25 (250V, 27A, 190W, TO-220)
- IXFH14N50P (500V, 14A, 190W)
Check datasheets for exact compatibility in your circuit.
- IRFP450LC (similar specs, different package)
- IRFP460 (500V, 20A, 190W)
- STP20NM50FD (500V, 20A, 190W, TO-220)
- FQP27N25 (250V, 27A, 190W, TO-220)
- IXFH14N50P (500V, 14A, 190W)
Check datasheets for exact compatibility in your circuit.
Features
The IRFP450PBF is an N-channel power MOSFET with the following key features:
- Voltage Rating: 500V (VDSS)
- Current Rating: 14A (ID at 25°C)
- Low On-Resistance: 0.4Ω (RDS(on) max at VGS = 10V)
- Fast Switching: Suitable for high-frequency applications
- High Power Handling: Up to 190W (PD at 25°C)
- Gate-Source Voltage (VGS): ±20V (max)
- TO-247 Package: Robust and heat-dissipating
- Avalanche Energy Rated: Enhances reliability in inductive loads
Ideal for switching power supplies, motor control, and inverters.
- Voltage Rating: 500V (VDSS)
- Current Rating: 14A (ID at 25°C)
- Low On-Resistance: 0.4Ω (RDS(on) max at VGS = 10V)
- Fast Switching: Suitable for high-frequency applications
- High Power Handling: Up to 190W (PD at 25°C)
- Gate-Source Voltage (VGS): ±20V (max)
- TO-247 Package: Robust and heat-dissipating
- Avalanche Energy Rated: Enhances reliability in inductive loads
Ideal for switching power supplies, motor control, and inverters.
Pinout
The IRFP450PBF is a TO-247AC packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation (typically driven by 4–10V).
2. Drain (D) – Main current-carrying terminal (connects to the load).
3. Source (S) – Ground/reference terminal.
Key Features:
- 500V drain-source voltage (VDS).
- 14A continuous drain current (ID).
- 0.4Ω on-resistance (RDS(on)).
- 150W power dissipation.
Commonly used in power switching applications like inverters, motor drives, and SMPS.
1. Gate (G) – Controls the switching operation (typically driven by 4–10V).
2. Drain (D) – Main current-carrying terminal (connects to the load).
3. Source (S) – Ground/reference terminal.
Key Features:
- 500V drain-source voltage (VDS).
- 14A continuous drain current (ID).
- 0.4Ω on-resistance (RDS(on)).
- 150W power dissipation.
Commonly used in power switching applications like inverters, motor drives, and SMPS.
Manufacturer
The IRFP450PBF is manufactured by Infineon Technologies, a German semiconductor company. Infineon specializes in power electronics, microcontrollers, and security solutions, serving industries like automotive, industrial, and consumer electronics. Known for high-quality MOSFETs and other power devices, Infineon emerged from Siemens' semiconductor division in 1999 and is now a global leader in its field. The IRFP450PBF is a power MOSFET designed for high-voltage, high-current applications.
Application
The IRFP450PBF, a power MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient voltage conversion in SMPS.
2. Motor Control – Drives and controls DC/AC motors.
3. Audio Amplifiers – High-power output stages in Class AB/D designs.
4. Inverters – Converts DC to AC in solar/wind systems.
5. Industrial Equipment – Relays and solenoids in automation.
Its high current (14A) and voltage (500V) ratings make it suitable for robust, high-power applications.
1. Switching Power Supplies – Efficient voltage conversion in SMPS.
2. Motor Control – Drives and controls DC/AC motors.
3. Audio Amplifiers – High-power output stages in Class AB/D designs.
4. Inverters – Converts DC to AC in solar/wind systems.
5. Industrial Equipment – Relays and solenoids in automation.
Its high current (14A) and voltage (500V) ratings make it suitable for robust, high-power applications.
Package
The IRFP450PBF is packaged in a TO-247AC (TO-247-3) type. This through-hole package features three leads, a robust design for high-power applications, and excellent thermal performance. It is commonly used in power MOSFET applications due to its durability and efficient heat dissipation.
