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IRFR120PBF
+BOMMOSFET N-CH 100V 7.7A DPAK
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メーカービシェイ・シリコニクス
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メーカー品番 #IRFR120PBF
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データシート IRFR120PBF DataSheet
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パッケージ TO-252-3
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在庫状況4436
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 7.7A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 270mOhm @ 4.6A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 16 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 360 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
概要
Description
Key Features:
- Voltage Rating: 100V
- Current Rating: 5.3A (continuous)
- Low On-Resistance (RDS(on)): 0.27Ω (max)
- Fast Switching Speed
- Logic-Level Gate Drive (4V threshold)
- TO-252 (DPAK) Package
Applications:
- DC-DC converters
- Motor control
- Power supplies
- Load switching
Advantages:
- Low gate charge for efficient switching
- Pb-free and RoHS compliant
- Robust thermal performance
This MOSFET is ideal for medium-power applications requiring reliability and compact design.
Equivalent
- IRFR120N (same specs, different package)
- IRF7201 (similar specs, SMD alternative)
- STP55NF06L (55V, but comparable current/RDS(on))
- FQP30N06L (60V, higher current)
- IRLZ24N (55V, logic-level gate)
Check datasheets for exact compatibility in your circuit.
Features
- Voltage Rating: 100V (VDSS)
- Current Rating: 5.3A (ID) at 25°C
- Low On-Resistance: 0.27Ω (RDS(on)) at VGS = 10V
- Fast Switching: Suitable for high-efficiency applications
- Logic-Level Gate Drive: Threshold voltage (VGS(th)- Low Gate Charge: Enhances switching performance
- Package: TO-252 (DPAK), surface-mount
- Avalanche Energy Rated: Improves ruggedness
- Applications: Power supplies, motor control, DC-DC converters
Compact, efficient, and cost-effective for medium-power switching.
Pinout
Pin Functions:
1. Gate (G) – Controls the switching of the MOSFET.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Ground/reference terminal.
Key Specs:
- N-channel MOSFET
- VDS: 100V
- ID: 5.3A (continuous)
- RDS(on): 0.27Ω (max at VGS=10V)
Commonly used in switching power supplies, motor control, and DC-DC converters.
Application
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge circuits, PWM drivers.
3. Load Switching – Relay replacements, high-side/low-side switches.
4. Lighting – LED drivers, ballast control.
5. Automotive – Electronic control units (ECUs), power distribution.
Its low on-resistance (RDS(on)) and fast switching make it efficient for high-current, low-voltage (<60V) applications. Common in industrial, consumer, and automotive electronics.
