画像は参考用です
IRFR3710ZPBF
+BOMMOSFET N-CH 100V 42A DPAK
-
メーカーインフィニオンテクノロジーズ
-
メーカー品番 #IRFR3710ZPBF
-
データシート IRFR3710ZPBF DataSheet
-
パッケージ TO-252-3
-
在庫状況7685
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 42A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 18mOhm @ 33A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 100 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2930 pF @ 25 V |
| PowerDissipation(Max) | 140W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
概要
Description
- Voltage Rating: 100V
- Current Rating: 5.7A (continuous)
- Low On-Resistance (RDS(on)): 85mΩ (max) @ 10V
- Fast Switching Speed
- Logic-Level Gate Drive (4V threshold)
- TO-252 (DPAK) Package
Ideal for DC-DC converters, motor control, and load switching in automotive, industrial, and consumer electronics. Its low gate charge and robust thermal performance enhance efficiency in compact designs.
For detailed specs, refer to the datasheet.
Equivalent
- IRFR3720ZPBF (similar specs, higher current rating)
- IRFR3710Z (same specs, different packaging)
- IRFR1205ZPBF (lower voltage, similar current)
- STP80NF10 (100V, 80A, 0.015Ω)
- FQP10N20C (200V, 10A, 0.28Ω)
Check datasheets for exact compatibility.
Features
- Voltage Rating: 100V
- Current Rating: 42A (continuous)
- Low On-Resistance (RDS(on)): 23mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Logic-Level Gate Drive: VGS(th) as low as 2V (min)
- Power Dissipation: 94W
- Package: TO-252 (DPAK), surface-mount
- Avalanche Energy Rated: Robust against inductive spikes
- Applications: Power supplies, motor control, DC-DC converters
This MOSFET is designed for efficiency in high-current, low-voltage applications.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Main current-carrying terminal (connected to the load).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-channel MOSFET
- VDS: 100V
- ID: 5.7A (continuous)
- RDS(on): 0.23Ω (max at VGS = 10V)
- Logic-level gate drive (fully enhanced at 4.5V)
Commonly used in switching circuits, power supplies, and motor control.
