IRFR9N20DPBF

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IRFR9N20DPBF

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MOSFET N-CH 200V 9.4A DPAK

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仕様

属性 値
Supplier Rochester Electronics, LLC,Infineon Technologies
Package / Case Bulk,Tube
Series HEXFET®
Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain(Id) @ 25°C 9.4A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 380mOhm @ 5.6A, 10V
Vgs(th)(Max) @ Id 5.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 27 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 560 pF @ 25 V
Power Dissipation (Max) 86W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak

概要

Description

IRFR9N20DPBF is a high-voltage N-channel MOSFET. Key points:
- Type: N-channel enhancement-mode MOSFET for switching power electronics.
- Rating: around 200 V drain–source voltage, continuous drain current ~9 A (values depend on temp).
- Package: Pb-free DPAK (TO-252) with drain tab connected to the drain pin.
- Drive: Gate voltage typically in the 4.5–10 V range for full-on; check datasheet for exact Rds(on) vs Vgs and temperature.
- Applications: offline/onboard switching power supplies, DC-DC converters, motor drivers, high-voltage switching circuits.
- Notes: Important to respect safe operating area and thermal limits; refer to the datasheet for exact electrical specs, package pinout, and recommended heatsinking.
If you need exact numbers (Rds(on), Vgs(th), SOA), I can pull those from the datasheet excerpt.

Features

IRFR9N20DPBF features:
- N-channel enhancement-mode power MOSFET
- Vds = 200 V
- Id (continuous) ≈ 9 A
- Rds(on) about 0.75 Ω (typ); max ~1.0 Ω at Vgs = 10 V
- Gate threshold ≈ 2–4 V
- Vgs rating ±20 V
- Pb-free, surface-mount DPAK/TO-252 style package (DPBF)
- Avalanche-capable with good dv/dt/ruggedness
- Suitable for high-voltage switching in SMPS, motor drives, and DC-DC converters.

Pinout

IRFR9N20DPBF is an N-channel enhancement-mode power MOSFET in a Pb-free DPAK. Pin count: 3 pins (Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source); the drain is also connected to the metal tab. Function: high-voltage switching device used as a power MOSFET (about 200 V rating, for switching/linear applications).

Manufacturer

- Manufacturer: Infineon Technologies AG (the IR brand; International Rectifier was the original maker, now part of Infineon).
- What kind of company: A German multinational semiconductor company specializing in power electronics, power semiconductors, and related integrated circuits.

Application

IRFR9N20DPBF is an N-channel enhancement MOSFET suitable for high-voltage, high-current switching. Common applications include:
- Offline switch-mode power supplies (flyback/forward)
- DC-DC converters and power regulators
- Motor drives (DC, BLDC, stepper)
- Solar inverters and energy-storage systems
- Uninterruptible power supplies and telecom power electronics
- Automotive power electronics (in-vehicle DC-DC, inverters) and Class-D audio amplifiers
Note: Use within its voltage/current ratings and thermal limits.

Package

D-Pak (TO-252) surface-mount package (Pb-free).

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