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IRFS7437TRLPBF
+BOMMOSFET N CH 40V 195A D2PAK
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRFS7437TRLPBF
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データシート IRFS7437TRLPBF DataSheet
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在庫状況4954
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET®, StrongIRFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 195A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 1.8mOhm @ 100A, 10V |
| Vgs(th)(Max) @ Id | 3.9V @ 150µA |
| Gate Charge(Qg)(Max) @ Vgs | 225 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 7330 pF @ 25 V |
| Power Dissipation (Max) | 230W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263AB |
概要
Description
Key features of the IRFS7437TRLPBF include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 195A, making it suitable for various high-power applications such as motor drives, power supplies, and DC-DC converters. The MOSFET has a low on-state resistance (R_DS(on)) which minimizes power losses and heat generation, enhancing efficiency. It is packaged in a TO-220 package, which offers good thermal performance and ease of mounting on a heat sink.
The IRFS7437TRLPBF is widely used in automotive, industrial, and consumer electronics, providing efficient power conversion and management solutions. Its reliability and robust design make it ideal for applications requiring efficient energy management.
Equivalent
1. NXP PSMN017-30YL
2. Infineon IPB107N20N3 G
3. STMicroelectronics STP80NF55
4. ON Semiconductor FDP047AN08A0
Always verify specific parameters and packaging requirements to ensure compatibility in your application.
Features
1. N-Channel MOSFET: Suitable for high-side and low-side switching.
2. Voltage and Current Ratings: It typically supports a drain-to-source voltage (V_ds) of 30V and a continuous drain current (I_d) of 195A.
3. Low On-Resistance: Offers low R_ds(on) for reduced power loss and improved efficiency.
4. Fast Switching: Designed to allow rapid switching, improving performance in dynamic applications.
5. Thermal Performance: Packaged to optimize thermal performance, often in a D2PAK (TO-263) package.
6. Rugged Design: Enhanced for ruggedness with fast body diode for better reliability in demanding applications.
7. Applications: Commonly used in synchronous rectification, DC-DC converters, motor drives, and load switching.
These features make the IRFS7437TRLPBF suitable for high-power and high-efficiency applications, particularly in automotive and industrial sectors.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is where the current flows out of the MOSFET. It is connected to the load in most applications.
3. Source (S): The source is where the current enters the MOSFET.
Additionally, the metal tab on the back of the package is typically connected to the drain and aids in heat dissipation. The IRFS7437TRLPBF is used in various high-performance applications, providing low on-resistance and efficient power handling capabilities.
Manufacturer
Infineon Technologies is known for its innovation in power semiconductors, microcontrollers, sensors, and security systems. It plays a significant role in the development of technologies that drive advancements in electric vehicles, renewable energy systems, and smart devices. The company is regarded as a leader in the semiconductor industry, with a strong emphasis on research and development to foster technological progress and sustainability.