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IRFSL3306PBF
+BOMMOSFET N-CH 60V 120A TO262
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRFSL3306PBF
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データシート IRFSL3306PBF DataSheet
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在庫状況22567
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仕様
| 属性 | 値 |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 4.2mOhm @ 75A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 150µA |
| Gate Charge(Qg)(Max) @ Vgs | 120 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4520 pF @ 50 V |
| Power Dissipation (Max) | 230W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262 |
概要
Description
The IRFSL3306PBF is a power MOSFET transistor designed for high-efficiency power management applications. It is part of the HEXFET® line by Infineon Technologies, known for its low on-resistance and high-speed switching capabilities. This component is typically used in power supply circuits, DC-DC converters, and motor control systems due to its ability to handle high currents and voltages efficiently.
The IRFSL3306PBF features a maximum drain-source voltage (V_ds) of 60V and a continuous drain current (I_d) of up to 160A, making it suitable for demanding applications. Its robust design includes a rugged silicon gate and advanced packaging that enhances thermal performance, reducing energy loss and improving overall system reliability.
This MOSFET is also lead-free and RoHS compliant, aligning with environmental regulations. The product is widely utilized by engineers looking to optimize energy efficiency and performance in electronic devices. Its versatility and reliability make it a popular choice in various industrial and consumer electronics applications.
The IRFSL3306PBF features a maximum drain-source voltage (V_ds) of 60V and a continuous drain current (I_d) of up to 160A, making it suitable for demanding applications. Its robust design includes a rugged silicon gate and advanced packaging that enhances thermal performance, reducing energy loss and improving overall system reliability.
This MOSFET is also lead-free and RoHS compliant, aligning with environmental regulations. The product is widely utilized by engineers looking to optimize energy efficiency and performance in electronic devices. Its versatility and reliability make it a popular choice in various industrial and consumer electronics applications.
Equivalent
The IRFSL3306PBF is an N-channel MOSFET designed for high-efficiency switching applications. Equivalent products with similar specifications include:
1. STMicroelectronics' STL100N4LF7 - Offers comparable voltage and current ratings.
2. ON Semiconductor's NTP65N06 - Features similar performance characteristics.
3. Vishay's SiHP054N60E - Matches in terms of voltage, current, and Rds(on).
4. Infineon's IPP60R099P7 - Provides equivalent electrical attributes.
Ensure to verify specific parameters and package compatibility before selecting an equivalent.
1. STMicroelectronics' STL100N4LF7 - Offers comparable voltage and current ratings.
2. ON Semiconductor's NTP65N06 - Features similar performance characteristics.
3. Vishay's SiHP054N60E - Matches in terms of voltage, current, and Rds(on).
4. Infineon's IPP60R099P7 - Provides equivalent electrical attributes.
Ensure to verify specific parameters and package compatibility before selecting an equivalent.
Features
The IRFSL3306PBF is a power MOSFET designed by Infineon Technologies, optimized for applications requiring high efficiency and fast switching. Here are some key features:
1. Voltage and Current Ratings: This MOSFET is typically rated for a high drain-source voltage and substantial continuous drain current, making it suitable for high-power applications.
2. Low On-State Resistance: It features a low R_DS(on), which minimizes conduction losses and enhances efficiency.
3. Fast Switching: The device is capable of rapid switching due to its design, which reduces switching losses and allows for higher frequency operation.
4. Thermal Performance: It often comes with good thermal characteristics, allowing for efficient heat dissipation and operation under high temperatures.
5. Package Type: Offered in various package types that support efficient thermal management and ease of integration into circuit designs.
6. Ruggedness: Built to withstand high-energy pulses and stress, enhancing reliability in demanding applications.
This MOSFET is commonly used in power management circuits, motor drives, and other applications where efficient power handling is critical.
1. Voltage and Current Ratings: This MOSFET is typically rated for a high drain-source voltage and substantial continuous drain current, making it suitable for high-power applications.
2. Low On-State Resistance: It features a low R_DS(on), which minimizes conduction losses and enhances efficiency.
3. Fast Switching: The device is capable of rapid switching due to its design, which reduces switching losses and allows for higher frequency operation.
4. Thermal Performance: It often comes with good thermal characteristics, allowing for efficient heat dissipation and operation under high temperatures.
5. Package Type: Offered in various package types that support efficient thermal management and ease of integration into circuit designs.
6. Ruggedness: Built to withstand high-energy pulses and stress, enhancing reliability in demanding applications.
This MOSFET is commonly used in power management circuits, motor drives, and other applications where efficient power handling is critical.
Pinout
The IRFSL3306PBF is a power MOSFET device. It typically comes in a package with three pins. Here is a brief description of its pin configuration and functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the conductivity between the drain and source. The gate acts as a signal input that turns the MOSFET on or off.
2. Drain (D): This is the terminal through which the main current flows from the supply voltage to the load. It connects to the positive side of the load.
3. Source (S): This pin is connected to the negative side of the circuit, completing the path for current flow when the MOSFET is on. It serves as the terminal through which current leaves the transistor.
The IRFSL3306PBF is used in applications requiring efficient power management, such as motor drives and DC-DC converters, due to its low on-state resistance and fast switching capabilities.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the conductivity between the drain and source. The gate acts as a signal input that turns the MOSFET on or off.
2. Drain (D): This is the terminal through which the main current flows from the supply voltage to the load. It connects to the positive side of the load.
3. Source (S): This pin is connected to the negative side of the circuit, completing the path for current flow when the MOSFET is on. It serves as the terminal through which current leaves the transistor.
The IRFSL3306PBF is used in applications requiring efficient power management, such as motor drives and DC-DC converters, due to its low on-state resistance and fast switching capabilities.
Manufacturer
The IRFSL3306PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in various sectors, including automotive, industrial power control, power management and multimarket, as well as digital security solutions. The company focuses on producing semiconductors that are essential for modern technologies, providing components that are used in a wide array of applications such as energy-efficient technologies, connected devices, and secure communications.
Application
The IRFSL3306PBF is a power MOSFET used in various applications due to its high efficiency and fast-switching capabilities. Common application areas include:
1. Power Supply Units: Used in both AC-DC and DC-DC converters for efficient power regulation.
2. Motor Control: Employed in the control circuits of electric motors for industrial and consumer applications.
3. Battery Management Systems: Utilized in charging and discharging circuits for battery protection and efficiency.
4. Automotive Electronics: Used in systems that require high reliability and efficiency, such as electric power steering and braking systems.
5. Telecommunications: Applied in power amplifiers and switches for signal processing.
This versatility makes the IRFSL3306PBF suitable for both consumer and industrial applications.
1. Power Supply Units: Used in both AC-DC and DC-DC converters for efficient power regulation.
2. Motor Control: Employed in the control circuits of electric motors for industrial and consumer applications.
3. Battery Management Systems: Utilized in charging and discharging circuits for battery protection and efficiency.
4. Automotive Electronics: Used in systems that require high reliability and efficiency, such as electric power steering and braking systems.
5. Telecommunications: Applied in power amplifiers and switches for signal processing.
This versatility makes the IRFSL3306PBF suitable for both consumer and industrial applications.
Package
The IRFSL3306PBF is a MOSFET from Infineon Technologies, typically used in power management applications. The package type for the IRFSL3306PBF is a D2PAK (TO-263), which is a surface-mount package designed for high power and effective heat dissipation.
