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IRFTS8342TRPBF
+BOMMOSFET N-CH 30V 8.2A 6TSOP
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRFTS8342TRPBF
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データシート IRFTS8342TRPBF DataSheet
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パッケージ TSOP-6
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在庫状況6266
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 8.2A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 19mOhm @ 8.2A, 10V |
| Vgs(th)(Max) @ Id | 2.35V @ 25µA |
| Gate Charge(Qg)(Max) @ Vgs | 4.8 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 560 pF @ 25 V |
| Power Dissipation (Max) | 2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
概要
Description
The IRFTS8342TRPBF is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by International Rectifier, now part of Infineon Technologies. This component is used in electronic circuits for switching and amplifying electronic signals. The device is known for its efficiency and reliability in power management applications.
Key features of the IRFTS8342TRPBF include:
1. N-Channel MOSFET: It operates as an N-channel device, which is favorable for high-speed switching applications.
2. Low On-Resistance: It offers low on-state resistance, which minimizes power loss and improves efficiency.
3. High Current Capability: Suitable for handling significant current loads, making it ideal for power-intensive applications.
4. Thermal Performance: Equipped with enhanced thermal characteristics to operate efficiently under varying temperature conditions.
5. Applications: Used in power supply circuits, motor controllers, DC-DC converters, and other power management applications.
The IRFTS8342TRPBF is favored for its balance of performance and efficiency, contributing to effective power management solutions.
Key features of the IRFTS8342TRPBF include:
1. N-Channel MOSFET: It operates as an N-channel device, which is favorable for high-speed switching applications.
2. Low On-Resistance: It offers low on-state resistance, which minimizes power loss and improves efficiency.
3. High Current Capability: Suitable for handling significant current loads, making it ideal for power-intensive applications.
4. Thermal Performance: Equipped with enhanced thermal characteristics to operate efficiently under varying temperature conditions.
5. Applications: Used in power supply circuits, motor controllers, DC-DC converters, and other power management applications.
The IRFTS8342TRPBF is favored for its balance of performance and efficiency, contributing to effective power management solutions.
Equivalent
The IRFTS8342TRPBF is an N-channel MOSFET. Equivalent products with similar specifications might include:
1. STMicroelectronics STP80NF03L
2. Infineon IPP200N06S3-04
3. ON Semiconductor NTD5867NL
4. Vishay Siliconix SiHF634
Ensure to verify the electrical characteristics and package compatibility before selecting an equivalent.
1. STMicroelectronics STP80NF03L
2. Infineon IPP200N06S3-04
3. ON Semiconductor NTD5867NL
4. Vishay Siliconix SiHF634
Ensure to verify the electrical characteristics and package compatibility before selecting an equivalent.
Features
The IRFTS8342TRPBF is a power MOSFET transistor from Infineon Technologies. It is designed for high-efficiency power management applications. Key features include:
1. N-Channel MOSFET: This is an n-channel enhancement mode power MOSFET.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (Vds) of around 55V and a continuous drain current (Id) of approximately 28A, making it suitable for various high-power applications.
3. Low On-Resistance: The MOSFET features a low on-resistance (Rds(on)), which minimizes power losses and improves efficiency.
4. Thermal Performance: It is designed to handle thermal stress effectively, often with a maximum junction temperature (Tj) of 175°C.
5. Rugged Design: The transistor is designed to be robust, with capabilities that may include avalanche energy handling.
6. Package Type: It is commonly available in industry-standard packaging, such as TO-220 or D2PAK, allowing for easy integration into various electronic designs.
These features make it suitable for applications such as power supplies, motor control, and other high-performance power control systems.
1. N-Channel MOSFET: This is an n-channel enhancement mode power MOSFET.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (Vds) of around 55V and a continuous drain current (Id) of approximately 28A, making it suitable for various high-power applications.
3. Low On-Resistance: The MOSFET features a low on-resistance (Rds(on)), which minimizes power losses and improves efficiency.
4. Thermal Performance: It is designed to handle thermal stress effectively, often with a maximum junction temperature (Tj) of 175°C.
5. Rugged Design: The transistor is designed to be robust, with capabilities that may include avalanche energy handling.
6. Package Type: It is commonly available in industry-standard packaging, such as TO-220 or D2PAK, allowing for easy integration into various electronic designs.
These features make it suitable for applications such as power supplies, motor control, and other high-performance power control systems.
Pinout
The IRFTS8342TRPBF is a power MOSFET with a TO-220 package, which typically features three pins. These pins are configured as:
1. Gate (G): This pin is used to control the MOSFET's conduction state. By applying a voltage to the gate, the conductivity between the source and drain can be controlled.
2. Drain (D): The drain is where the load current flows out of the MOSFET. It is connected to the load that the MOSFET is controlling.
3. Source (S): This is the terminal through which current enters the MOSFET. The source is typically connected to ground or a reference voltage in many circuit configurations.
These three pins correspond to the basic connections required to operate the MOSFET in switching or amplification applications. The IRFTS8342TRPBF is used for high-efficiency power conversion and switching applications.
1. Gate (G): This pin is used to control the MOSFET's conduction state. By applying a voltage to the gate, the conductivity between the source and drain can be controlled.
2. Drain (D): The drain is where the load current flows out of the MOSFET. It is connected to the load that the MOSFET is controlling.
3. Source (S): This is the terminal through which current enters the MOSFET. The source is typically connected to ground or a reference voltage in many circuit configurations.
These three pins correspond to the basic connections required to operate the MOSFET in switching or amplification applications. The IRFTS8342TRPBF is used for high-efficiency power conversion and switching applications.
Manufacturer
The IRFTS8342TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that designs, develops, manufactures, and markets a broad range of semiconductors and system solutions for automotive, industrial, and consumer electronics applications. The company is known for its innovations in power electronics, microcontrollers, and sensors, and it provides solutions for applications such as automotive electronics, power management, and security technologies.
Application
The IRFTS8342TRPBF is a power MOSFET commonly used in various applications due to its high efficiency and fast switching capabilities. Key application areas include:
1. Power Supply Units: Used in AC-DC and DC-DC converters for efficient power management.
2. Motor Drives: Suitable for controlling motors in industrial and automotive applications.
3. Telecommunications: Employed in base stations and network hardware for power regulation.
4. Consumer Electronics: Used in devices requiring compact and efficient power management solutions.
5. Renewable Energy Systems: Integrated into solar inverters and battery management systems.
6. Industrial Automation: Utilized in control systems for efficient power handling.
These applications benefit from its low on-resistance and robust thermal performance.
1. Power Supply Units: Used in AC-DC and DC-DC converters for efficient power management.
2. Motor Drives: Suitable for controlling motors in industrial and automotive applications.
3. Telecommunications: Employed in base stations and network hardware for power regulation.
4. Consumer Electronics: Used in devices requiring compact and efficient power management solutions.
5. Renewable Energy Systems: Integrated into solar inverters and battery management systems.
6. Industrial Automation: Utilized in control systems for efficient power handling.
These applications benefit from its low on-resistance and robust thermal performance.
Package
The IRFTS8342TRPBF transistor is typically supplied in a TO-252 package, also known as DPAK. This package type is commonly used for surface-mount applications, providing a compact and efficient thermal performance.
