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IRFU3910PBF
+BOMMOSFET N-CH 100V 16A IPAK
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRFU3910PBF
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データシート IRFU3910PBF DataSheet
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在庫状況3530
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | IRFU3910 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
| Power Dissipation (Max) | 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK (TO-251AA) |
| Package | TO-251-3 Short Leads, IPAK, TO-251AA |
| Packaging | Tube |
概要
Description
Key specifications include a high drain-to-source voltage rating, allowing for robust operation in a variety of power circuits. It's commonly used in applications such as motor control, power supplies, and other systems requiring efficient power delivery and management. The device is designed for surface mounting, which simplifies integration into modern electronic assemblies while saving space and allowing for automated manufacturing processes.
Overall, the IRFU3910PBF is valued for its reliability, efficiency, and compliance with environmental standards, making it a suitable choice for both consumer electronics and industrial applications.
Equivalent
1. STMicroelectronics' STP30N10F7
2. ON Semiconductor's NTD3055-150
3. Vishay's SiHP33N10D-E3
4. Infineon's IPP041N10N3 G
Always verify the electrical characteristics and pin configurations to ensure compatibility for your specific application.
Features
1. Voltage and Current Ratings: It is capable of handling up to 100V and 56A, making it suitable for high-power applications.
2. Low On-Resistance: The device offers a low on-state resistance (R_DS(on)), which enhances efficiency by minimizing energy loss during operation.
3. Fast Switching: It supports high-speed switching, which is ideal for applications requiring quick response times.
4. Thermal Performance: The MOSFET has robust thermal characteristics, allowing it to operate effectively under varying temperature conditions.
5. Construction: It comes in a TO-251 package, which provides efficient heat dissipation due to its exposed tab.
6. Enhanced Durability: The technology used in its construction ensures reliability and longevity, suitable for demanding industrial environments.
7. Lead-Free: The MOSFET is RoHS compliant, ensuring it meets environmental standards for electronic components.
These features make the IRFU3910PBF suitable for use in power management, motor drives, and other high-efficiency applications.
Pinout
1. Gate (G): This pin is used to control the on/off state of the MOSFET. Applying the appropriate voltage to the gate controls the flow of current between the source and drain.
2. Drain (D): This pin is the main terminal through which the current flows when the MOSFET is in the "on" state.
3. Source (S): This pin is the terminal where the current enters the MOSFET, and it is connected to the drain when the device is on, allowing current to flow.
The IRFU3910PBF is designed for high-efficiency power conversion and switching applications. It is known for its low on-resistance and good thermal performance, making it suitable for use in various electronic circuits.
Manufacturer
Application
1. DC-DC Converters: Used in power supply modules for efficient voltage regulation.
2. Motor Control: Suitable for controlling motors in various industrial and consumer applications.
3. Load Switches: Employed in systems that require efficient on/off control of power to a load.
4. RF Amplifiers: Utilized in RF and wireless communication systems for signal amplification.
5. Inverters: Applied in solar inverters and uninterruptible power supplies (UPS) for converting DC to AC power.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.