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IRFZ46NPBF
+BOMMOSFET N-CH 55V 53A TO220AB
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRFZ46NPBF
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データシート IRFZ46NPBF DataSheet
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パッケージ TO-220
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在庫状況3585
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 53A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 16.5mOhm @ 28A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 72 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1696 pF @ 25 V |
| Power Dissipation (Max) | 107W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
概要
Description
Key specifications of the IRFZ46NPBF include a maximum drain-source voltage (V_DS) of 55 volts and a continuous drain current (I_D) of up to 53 amperes. It offers a low on-resistance (R_DS(on)) of approximately 16 mΩ, which ensures minimal power loss and improved efficiency. The device operates in a temperature range of -55°C to 175°C, making it suitable for various environmental conditions.
This MOSFET is housed in a TO-220 package, which provides an effective thermal interface for heat dissipation. It features fast switching speeds and is designed to handle high currents and voltages with low gate charge requirements, making it ideal for applications where performance and efficiency are crucial.
Equivalent
1. IRFZ44N
2. STP55NF06
3. FDP6030BL
4. FQP30N06L
5. BUZ11
These alternatives have similar voltage and current ratings, but always check the datasheets for exact specifications to ensure compatibility with your application.
Features
1. Drain-Source Voltage (Vds): 55V, allowing for operation in various power circuits.
2. Continuous Drain Current (Id): 53A, suitable for high current applications.
3. Rds(on): Low on-resistance of approximately 16 mΩ, ensuring minimal power loss.
4. Gate-Source Voltage (Vgs): ±20V, providing robust gate drive capabilities.
5. Fast Switching: Enables efficient high-speed applications.
6. Package: Available in a TO-220 package for easy mounting and heat dissipation.
7. Thermal Performance: Has a junction temperature range from -55°C to 175°C.
8. RoHS Compliant: Environmentally friendly with lead-free terminals.
These features make the IRFZ46NPBF ideal for use in applications such as motor drives, power supplies, and DC-DC converters.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current enters the MOSFET when it's in the 'on' state.
3. Source (S): This is the terminal where the current exits the MOSFET.
These MOSFETs are commonly used for switching applications due to their high efficiency and ability to handle significant power levels.
Manufacturer
Application
1. Switching Power Supplies: Utilized for efficient voltage regulation and energy conversion.
2. Motor Control: Employed in DC motor drivers for automotive and industrial applications.
3. Inverters: Used in solar power inverters and other renewable energy systems.
4. Lighting: Applied in LED drivers for efficient power management.
5. Audio Amplifiers: Used for switching in Class D audio amplifiers.
6. Battery Management Systems: For managing power in rechargeable battery packs.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.