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IRG4BH20K-S
+BOMIGBT 1200V 11A 60W D2PAK
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メーカーインフィニオンテクノロジーズ
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メーカー品番 #IRG4BH20K-S
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データシート IRG4BH20K-S DataSheet
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パッケージ TO-263-3
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在庫状況8291
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Part Status | Obsolete |
| Voltage - Collector Emitter Breakdown(Max) | 1200 V |
| Current - Collector(Ic)(Max) | 11 A |
| Current - Collector Pulsed(Icm) | 22 A |
| Vce(on)(Max) @ Vge Ic | 4.3V @ 15V, 5A |
| Power - Max | 60 W |
| Switching Energy | 450µJ (on), 440µJ (off) |
| Input Type | Standard |
| Gate Charge | 28 nC |
| Td(on / off) @ 25°C | 23ns/93ns |
| Test Condition | 960V, 5A, 50Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概要
Description
The IRG4BH20K-S is an insulated-gate bipolar transistor (IGBT) module designed for high-efficiency power switching applications. Manufactured by Infineon Technologies, it combines the advantages of MOSFETs and bipolar transistors to provide high current capacity and fast switching speeds. The module is typically used in applications like motor drives, power inverters, and power supply systems.
Key features of the IRG4BH20K-S include its high voltage handling capability, typically around 1200V, and a current rating suitable for medium to high power applications. The IGBT module is known for its robustness and reliability under demanding operating conditions. Additionally, it offers low saturation voltage and reduced switching losses, enhancing overall system efficiency.
The IRG4BH20K-S also includes features like short-circuit protection and thermal overload protection, making it suitable for diverse industrial applications. Its compact design and efficient thermal management further aid in maintaining performance stability and longevity in various electronic systems.
Key features of the IRG4BH20K-S include its high voltage handling capability, typically around 1200V, and a current rating suitable for medium to high power applications. The IGBT module is known for its robustness and reliability under demanding operating conditions. Additionally, it offers low saturation voltage and reduced switching losses, enhancing overall system efficiency.
The IRG4BH20K-S also includes features like short-circuit protection and thermal overload protection, making it suitable for diverse industrial applications. Its compact design and efficient thermal management further aid in maintaining performance stability and longevity in various electronic systems.
Equivalent
The IRG4BH20K-S is an IGBT (Insulated Gate Bipolar Transistor) designed for high-speed switching applications. Equivalent products include:
1. STMicroelectronics STGW20NC60VD
2. Infineon Technologies IKW20N65H5
3. Toshiba MG25Q6ES42
4. ON Semiconductor FGA25N120ANTD
These alternatives can vary based on specific parameters like voltage, current ratings, and switching speeds, so it's important to verify compatibility with the specific application's requirements.
1. STMicroelectronics STGW20NC60VD
2. Infineon Technologies IKW20N65H5
3. Toshiba MG25Q6ES42
4. ON Semiconductor FGA25N120ANTD
These alternatives can vary based on specific parameters like voltage, current ratings, and switching speeds, so it's important to verify compatibility with the specific application's requirements.
Features
The IRG4BH20K-S is a high-speed insulated gate bipolar transistor (IGBT) designed for efficient power switching applications. Key features include:
1. Voltage and Current Ratings: It has a collector-emitter voltage rating of 1200V and a continuous collector current of 24A, making it suitable for high-voltage applications.
2. Low Saturation Voltage: The IGBT provides a low V_CE(sat), enhancing efficiency by reducing conduction losses.
3. High Switching Speed: This allows for improved performance in fast-switching applications, such as motor drives and inverters.
4. Rugged Design: It is designed to handle high-stress environments, with robustness against short circuits and over-current scenarios.
5. Compact Package: The IRG4BH20K-S comes in a TO-247AC package, which provides good thermal performance and ease of mounting.
6. Integrated Anti-Parallel Diode: This feature helps in reducing switching losses and improves performance in inductive load applications.
These attributes make the IRG4BH20K-S suitable for use in industrial, automotive, and consumer applications where high efficiency and reliability are crucial.
1. Voltage and Current Ratings: It has a collector-emitter voltage rating of 1200V and a continuous collector current of 24A, making it suitable for high-voltage applications.
2. Low Saturation Voltage: The IGBT provides a low V_CE(sat), enhancing efficiency by reducing conduction losses.
3. High Switching Speed: This allows for improved performance in fast-switching applications, such as motor drives and inverters.
4. Rugged Design: It is designed to handle high-stress environments, with robustness against short circuits and over-current scenarios.
5. Compact Package: The IRG4BH20K-S comes in a TO-247AC package, which provides good thermal performance and ease of mounting.
6. Integrated Anti-Parallel Diode: This feature helps in reducing switching losses and improves performance in inductive load applications.
These attributes make the IRG4BH20K-S suitable for use in industrial, automotive, and consumer applications where high efficiency and reliability are crucial.
Pinout
The IRG4BH20K-S is an Insulated Gate Bipolar Transistor (IGBT) used in various electronic applications. Specifically, it is a 600V, 24A device designed for high-speed switching applications.
Regarding its pin count and function:
1. Pin Count: The IRG4BH20K-S typically comes in a TO-220 package which generally has 3 pins.
2. Function of Pins:
- Collector (C): This is the terminal through which the main current flows from the collector to the emitter when the IGBT is in the 'on' state.
- Gate (G): This terminal is used to control the IGBT. A voltage applied to the gate determines whether the IGBT is in the 'on' or 'off' state.
- Emitter (E): This is the terminal through which the current exits the device when it is in the 'on' state.
These pins allow the IRG4BH20K-S to function effectively as a switch in power electronics applications.
Regarding its pin count and function:
1. Pin Count: The IRG4BH20K-S typically comes in a TO-220 package which generally has 3 pins.
2. Function of Pins:
- Collector (C): This is the terminal through which the main current flows from the collector to the emitter when the IGBT is in the 'on' state.
- Gate (G): This terminal is used to control the IGBT. A voltage applied to the gate determines whether the IGBT is in the 'on' or 'off' state.
- Emitter (E): This is the terminal through which the current exits the device when it is in the 'on' state.
These pins allow the IRG4BH20K-S to function effectively as a switch in power electronics applications.
Manufacturer
The IRG4BH20K-S is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in various electronics components, including power semiconductors, microcontrollers, sensors, and security ICs. It serves a wide range of industries such as automotive, industrial, consumer electronics, and communication. The company is known for its focus on innovation and energy efficiency, aiming to offer solutions that contribute to a more sustainable future.
Application
The IRG4BH20K-S is an insulated gate bipolar transistor (IGBT) commonly used in various applications due to its efficiency and robust performance. It is typically found in motor drives, offering precise control and energy savings in industrial and consumer appliances. Additionally, it is used in power inverters for renewable energy systems like solar and wind, optimizing the conversion of DC to AC power. The IRG4BH20K-S is also used in uninterruptible power supplies (UPS) to maintain continuous power in the event of an outage. Its high-speed switching capabilities make it suitable for induction heating systems and other high-frequency applications.
Package
The IRG4BH20K-S is typically available in a TO-247 package type, which is a through-hole, three-lead package commonly used for power semiconductors.
