IRG4PF50WPBF

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IRG4PF50WPBF

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IGBT 900V 51A 200W TO247AC

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  • データシート IRG4PF50WPBF DataSheet

  • パッケージ TO-247-3

  • 在庫状況7350

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仕様

属性 値
Package Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 900 V
Current-Collector(Ic)(Max) 51 A
Current-CollectorPulsed(Icm) 204 A
Vce(on)(Max)@VgeIc 2.7V @ 15V, 28A
Power-Max 200 W
SwitchingEnergy 190µJ (on), 1.06mJ (off)
InputType Standard
GateCharge 160 nC
Td(on/off)@25°C 29ns/110ns
TestCondition 720V, 28A, 5Ohm, 15V
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

概要

Equivalent

Equivalent products to the IRG4PF50WPBF (600V, 40A IGBT) include:
- IRG4PC50WPBF (600V, 55A)
- IRG4PC50UDPBF (600V, 55A, Ultrafast)
- STGW40H60DF (600V, 40A, STMicro)
- FGA40N60SMD (600V, 40A, Fairchild/ON Semi)
- HGTG40N60B3 (600V, 75A, Fairchild/ON Semi)
Check datasheets for exact specs and pin compatibility.

Features

The IRG4PF50WPBF is a 500V, 44A IGBT with the following key features:
- Voltage Rating: 500V (VCES)
- Current Rating: 44A (IC @ 25°C)
- Low VCE(sat): 1.65V (typical) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- Robust Design: High short-circuit withstand capability (10µs)
- Temperature Range: -55°C to +150°C (Tj)
- Package: TO-247AC (isolated tab for easier mounting)
- Applications: Motor drives, inverters, UPS, and welding equipment
It combines low switching losses with high efficiency, making it suitable for power electronics.

Manufacturer

The IRG4PF50WPBF is manufactured by Infineon Technologies, a leading German semiconductor company. Infineon specializes in power electronics, automotive systems, and IoT solutions, known for high-performance components like IGBTs, MOSFETs, and microcontrollers. The company serves industries such as automotive, industrial, and renewable energy.
The IRG4PF50WPBF is an IGBT (Insulated Gate Bipolar Transistor) designed for power switching applications.

Package

The IRG4PF50WPBF is a TO-247AC package type. This is a through-hole, three-lead package commonly used for power transistors and MOSFETs. It features a rugged design with high current and voltage handling capabilities, suitable for power applications. The TO-247AC variant includes an isolated mounting tab for improved thermal performance.

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