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IRL7486MTRPBF
+BOMIRL7486M - 12V-300V N-CHANNEL PO
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メーカーインターナショナル・レクティファイアー
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メーカー品番 #IRL7486MTRPBF
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データシート IRL7486MTRPBF DataSheet
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パッケージ MG-WDSON-8
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在庫状況2670
365 日間品質保証
7*24 日間の品質保証
90-時間単位のサービス保証
1日間のアフターサービス保証
仕様
| 属性 | 値 |
| Package / Case | Bulk |
| Series | HEXFET®, StrongIRFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 209A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.25mOhm @ 123A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 150µA |
| Gate Charge(Qg)(Max) @ Vgs | 111 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 6904 pF @ 25 V |
| Power Dissipation (Max) | 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DirectFET™ Isometric ME |
概要
Description
Key specifications:
- Voltage Rating (VDSS): 30V
- Continuous Drain Current (ID): 195A (at 25°C)
- RDS(on)GS = 10V)
- Package: PQFN 5x6mm (thermally enhanced)
Its lead-free, RoHS-compliant design ensures environmental compliance. The low gate charge (QG) and high current handling make it suitable for high-frequency switching with minimal losses.
For detailed specs, refer to the datasheet on Infineon’s website.
Equivalent
- SiA436DJ-T1-GE3 (Vishay)
- DMN3010LSD-13 (Diodes Inc.)
- BSC123N08NS3G (Infineon)
These offer similar specs (30V, dual N-channel, low RDS(on)). Verify pin compatibility and electrical characteristics for your application.
Features
- Voltage Rating: 60V
- Current Rating: 140A (pulsed), 100A (continuous)
- Low On-Resistance (RDS(on)): 3.3 mΩ (max) @ VGS = 10V
- Gate Threshold Voltage (VGS(th)): 1V to 2.5V
- Fast Switching Speed: Optimized for high-efficiency applications
- Power Dissipation: 200W
- Package: TO-252 (DPAK), surface-mount
- Logic-Level Gate Drive: Compatible with 5V drive signals
Ideal for power management, motor control, and DC-DC converters due to its low RDS(on) and high current handling.
Pinout
Pin Count: 8 pins (4 pins per MOSFET, with shared drain connections).
Key Functions:
- Pins 1, 2, 7, 8: Drain (D) – Common for both MOSFETs.
- Pins 3, 6: Gate (G) – Independent gate control for each MOSFET.
- Pins 4, 5: Source (S) – Independent source terminals.
Applications:
- Power switching in DC-DC converters, motor drives, and load switches.
- Low-side switching due to common-drain configuration.
Key Specs:
- VDS: 30V
- ID: 13A (per MOSFET)
- Low RDS(on) for efficient power handling.
Compact and efficient for dual-channel power management.
